S. Gautam, V. K. Maurya, V. Aggarwal, Rahul Kumar, Bheem Singh, V. P. S. Awana, B. S. Yadav, S. Ojha, R. Ganesan, S. S. Kushvaha
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The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. 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引用次数: 0
摘要
在本研究中,我们研究了磁性 Cr 掺杂对 SrTiO3 (110) 基质上溅射 Bi2Se3 薄膜传输特性的影响。高分辨率 X 射线衍射和拉曼光谱测量结果表明,生长的是斜方体 Bi2Se3 薄膜。通过 X 射线光发射光谱和卢瑟福背散射光谱进行了进一步的电子和成分分析,Bi2-xCrxSe3 薄膜的 x 值估计为 0.18。电阻率随温度(2-300 K)的变化显示,未掺杂的 Bi2Se3 在 30 K 以下具有金属性质,在 30 K 以下电阻率急剧上升。通过这种方法确定的未掺杂 Bi2Se3 薄膜的体带隙值为 256 meV。未掺杂薄膜的磁导数据显示出弱反局域(WAL)效应,而掺杂铬的薄膜在低温(<50 K)下显示出弱局域(WL)效应。在低磁场和低温条件下,掺铬薄膜的 WAL 效应和 WL 效应的竞争性质非常突出。电阻的急剧增加表明,掺杂铬可以显著改变 Bi2Se3 薄膜的电学特性,这可能会在未来设备中得到应用。
Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film
In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2−xCrxSe3 thin film. The variation in the resistivity with temperature (2–300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices.