Journal of Applied Physics最新文献_第6页

Simulation of light propagation in medium with an ultrasonically induced refractive index gradient 模拟光在具有超声诱导折射率梯度的介质中的传播

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0207446

Y. Harada, M. Ishikawa, Y. Kuroda, M. Matsukawa, D. Koyama

{"title":"Simulation of light propagation in medium with an ultrasonically induced refractive index gradient","authors":"Y. Harada, M. Ishikawa, Y. Kuroda, M. Matsukawa, D. Koyama","doi":"10.1063/5.0207446","DOIUrl":"https://doi.org/10.1063/5.0207446","url":null,"abstract":"Modulation of the refractive index in a medium by external stimuli enables fast and reversible control of light propagation. This technology for controlling light has led to new discoveries in a wide range of research fields from physics to life sciences and has played a major role in the development of photonics devices. In this article, we focus on ultrasound as an external stimulus and have devised a method to control the refractive index of a medium using ultrasound. Our research group has previously discovered that a giant refractive-index gradient (Δn on the order of 10−2) was induced when water was irradiated with high-frequency (100 MHz range), high-intensity (on the order of MPa) ultrasound. Here, we report ray-tracing simulations in a medium with a refractive-index gradient induced by ultrasonic radiation. A numerical model of the refractive-index gradient was developed based on the experimental data, and ray-tracing simulations were performed using the Euler–Lagrange equation. The ray-tracing simulation results were close numerically to the profiles of the laser beam observed in the experiment when the laser beam was incident on the refractive-index-gradient medium.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140977245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric, elastic, and piezoelectric matrices of [001]-textured Mn-PMN-PZT ceramics 锰-PMN-PZT 陶瓷 [001] 纹理的介电、弹性和压电基质

Journal of Applied Physics Pub Date : 2024-05-14 DOI: 10.1063/5.0212073

Mingyang Tang, Xin Liu, Yike Wang, Xiaodan Ren, Zheng Yang, Zhuo Xu, Liwei D. Geng, Yongke Yan

{"title":"Dielectric, elastic, and piezoelectric matrices of [001]-textured Mn-PMN-PZT ceramics","authors":"Mingyang Tang, Xin Liu, Yike Wang, Xiaodan Ren, Zheng Yang, Zhuo Xu, Liwei D. Geng, Yongke Yan","doi":"10.1063/5.0212073","DOIUrl":"https://doi.org/10.1063/5.0212073","url":null,"abstract":"[001]-textured 0.4P(Mg1/3Nb2/3)O3-0.25PbZrO3-0.35PbTiO3-0.5%MnO2 (Mn-PMN-PZT) ceramics were fabricated by templated grain growth using 2 vol. % BaTiO3 in this paper. Full matrices of dielectric (ɛij), elastic (sij, cij), and piezoelectric (dij) parameters were obtained by the resonance–antiresonance method. The dielectric constant ɛ33T of textured ceramics reaches 2600, which is four times that of random ceramics. Textured Mn-PMN-PZT ceramics exhibit high d33 = 984 pC/N and high k33 = 0.89, which is much larger than d33 = 223 pC/N and k33 = 0.70 of random ceramics. However, ɛ11T of ceramics decreases by about 30% after texturing, and the corresponding shear coupling coefficient k15 also decreases from 0.66 to 0.44, which may be due to the reduction in the angle between spontaneous polarization and transverse direction. Furthermore, the temperature stability of the textured ceramics was evaluated as well. The phase transition temperature TR−T was determined by the impedance method to be 120 °C. The textured Mn-PMN-PZT ceramic shows high temperature stability, which is better than PMN-PT.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140978841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Channeling skyrmions: Suppressing the skyrmion Hall effect in ferrimagnetic nanostripes 引导天离子：抑制铁磁性纳米带中的天电荷霍尔效应

Journal of Applied Physics Pub Date : 2024-05-14 DOI: 10.1063/5.0206403

R. C. Silva, R. L. Silva, J. C. Moreira, W. A. Moura-Melo, A. Pereira

引用次数: 0

Hydrogen passivation of acceptor defects in delafossite CuMO2 (M = Al, Ga, In): Insights for enhanced p-type conductivity 二化石 CuMO2（M = Al、Ga、In）中受体缺陷的氢钝化：增强 p 型导电性的启示

Journal of Applied Physics Pub Date : 2024-05-14 DOI: 10.1063/5.0201483

Aroon Ananchuensook, Intuon Chatratin, Anderson Janotti, T. Watcharatharapong, J. T‐Thienprasert, Adisak Boonchun, S. Jungthawan, P. Reunchan

{"title":"Hydrogen passivation of acceptor defects in delafossite CuMO2 (M = Al, Ga, In): Insights for enhanced p-type conductivity","authors":"Aroon Ananchuensook, Intuon Chatratin, Anderson Janotti, T. Watcharatharapong, J. T‐Thienprasert, Adisak Boonchun, S. Jungthawan, P. Reunchan","doi":"10.1063/5.0201483","DOIUrl":"https://doi.org/10.1063/5.0201483","url":null,"abstract":"Transparent conducting oxides with p-type conductivity hold immense potential for various electronic applications. The role of native point defects in delafossite CuMO2 (M = Al, Ga, In) as the source of p-type conductivity has been widely acknowledged. However, understanding the primary defects governing the electrical properties and devising strategies for improvement remains a critical challenge. In this study, we employ range-separated hybrid density functional calculations to elucidate the impact of acceptor defects and their interactions with hydrogen on electrical conductivity. Our findings demonstrate that hydrogen plays a pivotal role in controlling p-type conductivity in these oxides. Our investigation reveals that the interactions between hydrogen interstitial Hi and copper vacancy VCu lead to the formation of stable complexes that are electrically inactive. Considerable binding energies are observed for Hi–VCu complexes, indicating that they are highly bound complexes with low formation energy and, thus, high concentrations under both O-rich and O-poor conditions. A second hydrogen can be bound to VCu to form 2Hi–VCu complexes, which are thermodynamically stable and function as a single donor. Furthermore, hydrogen can bind with the antisite acceptor defects, CuM, forming Hi–CuM complexes. However, the lower binding energies associated with these complexes suggest likely dissociation into isolated Hi and CuM at relatively low temperatures. By shedding light on the strong influence of hydrogen passivation of acceptor defects, this study offers valuable insights into p-type conductivity in delafossite CuMO2.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140981356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Leakage current as a probe into the mechanics of carrier transport in insulating composite polymers 以泄漏电流探究绝缘复合聚合物中的载流子传输机理

Journal of Applied Physics Pub Date : 2024-04-25 DOI: 10.1063/5.0198337

M. M. Mamun, Amar Mavinkurve, Michiel van Soestbergen, Greta Terzariol, Muhammad A. Alam

{"title":"Leakage current as a probe into the mechanics of carrier transport in insulating composite polymers","authors":"M. M. Mamun, Amar Mavinkurve, Michiel van Soestbergen, Greta Terzariol, Muhammad A. Alam","doi":"10.1063/5.0198337","DOIUrl":"https://doi.org/10.1063/5.0198337","url":null,"abstract":"Amorphous composite polymers are widely used as insulators in microelectronics due to their high dielectric strength, mechanical robustness, and thermal stability. However, organic–inorganic composite systems suffer from undesirable performance and accelerated degradation due to leakage current (JTot). Unfortunately, the underlying mechanism of JTot and its components (e.g., ionic and electronic constituents) are inadequately understood, particularly in extreme use conditions (e.g., high humidity and temperature). In this study, we use numerical simulation and experimental JTot data (in amorphous epoxy polymer with silica fillers) to (i) unify the electrostatic model for JTot in composite polymers, (ii) illustrate that the early part of JTot (i.e., external current) is primarily due to the image charge associated with ion transport/ localization (Jion) near the metallic contacts, (iii) demonstrate that the accumulated counter-ions reduce the barrier for electronic charge injection (by band bending) and facilitate electronic injection from the metals (Jelec), and (iv) provide an algorithm for the in situ ion transport characterization of composite insulators by exploiting Jion. This work provides new insights regarding the leakage current mechanism and how it can be used as a probe into the complex transport mechanisms of the composite material.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140657657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition 远程等离子体增强化学气相沉积法制备的 GeSn 薄膜中的外延孪晶耦合微结构

Journal of Applied Physics Pub Date : 2024-04-25 DOI: 10.1063/5.0189718

Jiechao Jiang, N. Chetuya, Joseph H. Ngai, Gordon J. Grzybowski, E. Meletis, Bruce Claflin

{"title":"Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition","authors":"Jiechao Jiang, N. Chetuya, Joseph H. Ngai, Gordon J. Grzybowski, E. Meletis, Bruce Claflin","doi":"10.1063/5.0189718","DOIUrl":"https://doi.org/10.1063/5.0189718","url":null,"abstract":"Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140658678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solid-liquid interfaces: Atomic-scale structure and dynamics 固液界面：原子尺度的结构和动力学

Journal of Applied Physics Pub Date : 2024-04-25 DOI: 10.1063/5.0209545

Angela C. Stelson, Damien Laage, Kathleen Schwarz, R. Sundararaman

引用次数: 0

An exploration of anomalous electrical noise in shocked cyclotrimethylenetrinitramine (RDX)-based explosives 对冲击式环三亚甲基三硝胺（RDX）爆炸物中异常电噪声的探索

Journal of Applied Physics Pub Date : 2024-04-24 DOI: 10.1063/5.0191271

M. J. Burns, B. A. Chidester

引用次数: 0

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon 外延生长硅中空位和 p 型掺杂剂与空穴和正电子的相互作用

Journal of Applied Physics Pub Date : 2024-04-24 DOI: 10.1063/5.0179101

Fabio Isa, Javier A. Schmidt, S. Aghion, Enrico Napolitani, G. Isella, Rafael Ferragut

{"title":"Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon","authors":"Fabio Isa, Javier A. Schmidt, S. Aghion, Enrico Napolitani, G. Isella, Rafael Ferragut","doi":"10.1063/5.0179101","DOIUrl":"https://doi.org/10.1063/5.0179101","url":null,"abstract":"The concentration of vacancies and impurities in semiconductors plays a crucial role in determining their electrical, optical, and thermal properties. This study aims to clarify the nature of the interaction between positrons and ionized p-type impurities, emphasizing the similarities they share with the interaction between holes and this type of impurity. An overall strategy for investigating defects in semiconductor crystals that exhibit a combination of vacancies and p-type impurities is presented. By using positron annihilation spectroscopy, in particular, Doppler broadening of the annihilation radiation, we quantify the concentration of vacancies in epitaxial Si crystals grown by low-energy plasma-enhanced chemical vapor deposition. The vacancy number densities that we find are (1.2 ± 1.0) × 1017 cm−3 and (3.2 ± 1.5) × 1020 cm−3 for growth rates of 0.27 and 4.9 nm/s, respectively. Subsequent extended annealing of the Si samples effectively reduces the vacancy density below the sensitivity threshold of the positron technique. Secondary ion mass spectrometry indicates that the boron doping remains unaffected during the annealing treatment intended for vacancy removal. This study provides valuable insights into the intricate interplay between vacancies and ionized impurities with positrons in semiconductor crystals. The obtained results contribute to advance the control and understanding of material properties in heterostructures by emphasizing the significance of managing vacancy and dopant concentrations.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140660794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multimodal learning of heat capacity based on transformers and crystallography pretraining 基于变压器和晶体学预培训的热容量多模式学习

Journal of Applied Physics Pub Date : 2024-04-24 DOI: 10.1063/5.0201755

Hongshuo Huang, Amir Barati Farimani

引用次数: 0