Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Fabio Isa, Javier A. Schmidt, S. Aghion, Enrico Napolitani, G. Isella, Rafael Ferragut
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Abstract

The concentration of vacancies and impurities in semiconductors plays a crucial role in determining their electrical, optical, and thermal properties. This study aims to clarify the nature of the interaction between positrons and ionized p-type impurities, emphasizing the similarities they share with the interaction between holes and this type of impurity. An overall strategy for investigating defects in semiconductor crystals that exhibit a combination of vacancies and p-type impurities is presented. By using positron annihilation spectroscopy, in particular, Doppler broadening of the annihilation radiation, we quantify the concentration of vacancies in epitaxial Si crystals grown by low-energy plasma-enhanced chemical vapor deposition. The vacancy number densities that we find are (1.2 ± 1.0) × 1017 cm−3 and (3.2 ± 1.5) × 1020 cm−3 for growth rates of 0.27 and 4.9 nm/s, respectively. Subsequent extended annealing of the Si samples effectively reduces the vacancy density below the sensitivity threshold of the positron technique. Secondary ion mass spectrometry indicates that the boron doping remains unaffected during the annealing treatment intended for vacancy removal. This study provides valuable insights into the intricate interplay between vacancies and ionized impurities with positrons in semiconductor crystals. The obtained results contribute to advance the control and understanding of material properties in heterostructures by emphasizing the significance of managing vacancy and dopant concentrations.
外延生长硅中空位和 p 型掺杂剂与空穴和正电子的相互作用
半导体中的空位和杂质浓度在决定半导体的电学、光学和热学特性方面起着至关重要的作用。本研究旨在阐明正电子与电离 p 型杂质之间相互作用的性质,强调它们与空穴和这类杂质之间相互作用的相似之处。本研究提出了一种研究半导体晶体缺陷的总体策略,这种缺陷表现为空位和 p 型杂质的结合。通过使用正电子湮灭光谱,特别是湮灭辐射的多普勒展宽,我们量化了通过低能等离子体增强化学气相沉积法生长的外延硅晶体中的空位浓度。在生长速率为 0.27 nm/s 和 4.9 nm/s 时,我们发现空位数密度分别为 (1.2 ± 1.0) × 1017 cm-3 和 (3.2 ± 1.5) × 1020 cm-3。随后对硅样品进行的扩展退火有效地降低了空位密度,使其低于正电子技术的灵敏度阈值。二次离子质谱分析表明,在旨在去除空位的退火处理过程中,硼掺杂没有受到影响。这项研究为了解半导体晶体中空位和电离杂质与正电子之间错综复杂的相互作用提供了宝贵的见解。研究结果强调了管理空位和掺杂剂浓度的重要性,有助于推进对异质结构中材料特性的控制和理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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