Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

M. Dub, P. Sai, Y. Ivonyak, D. B. But, J. Kacperski, P. Prystawko, R. Kucharski, M. Słowikowski, G. Cywiński, W. Knap, S. Rumyantsev
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Abstract

Unscreened (ungated) plasmons in large-area grating-gate AlGaN/GaN heterostructures were studied experimentally by Fourier-transform spectroscopy. Special attention was paid to the recently discovered THz plasmonic crystal modes observed at totally depleted gated regions when plasma oscillations were localized only in ungated parts of the grating-gate structures. The frequency of these modes is still gate voltage-dependent in the limited range due to the depletion of the ungated parts located close to the gate edges. Double gate structures with an additional bottom gate were fabricated and studied to improve the gate voltage tunability of the unscreened plasmons. Since this gate is located deep below the channel, the plasmons behaved as ungated ones, but their frequency still could be tuned by this bottom gate. We show that the combined effect of the top and bottom gates allows the efficient tuning of terahertz frequencies of unscreened modes in the grating-gate AlGaN/GaN plasmonic crystals.
控制 AlGaN/GaN 太赫兹等离子晶体中的非屏蔽模式
通过傅立叶变换光谱法对大面积栅极氮化铝/氮化镓异质结构中的非屏蔽(非栅极)质子进行了实验研究。我们特别关注了最近发现的太赫兹等离子晶体模式,当等离子振荡仅定位在光栅-栅结构的非栅极部分时,我们在完全耗尽的栅极区域观察到了这些模式。这些模式的频率在有限的范围内仍然与栅极电压有关,这是因为靠近栅极边缘的未栅极部分发生了损耗。为了提高未屏蔽等离子体的栅极电压可调性,我们制作并研究了带有附加底栅极的双栅极结构。由于该栅极位于沟道下方深处,因此质子的表现与未栅质子相同,但其频率仍可通过该底部栅极进行调节。我们的研究表明,在顶部和底部栅极的共同作用下,栅极栅极 AlGaN/GaN 等离子晶体中未屏蔽模式的太赫兹频率可以得到有效调谐。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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