Journal of Applied Physics最新文献_第3页

Numerical and experimental study of supersonically expanding argon plasma using a micrometer hollow cathode discharge 利用微米空心阴极放电对超音速膨胀氩等离子体进行数值和实验研究

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0207234

Yu Gu, Nicolas Suas-David, Jordy Bouwman, Yongdong Li, Harold Linnartz

{"title":"Numerical and experimental study of supersonically expanding argon plasma using a micrometer hollow cathode discharge","authors":"Yu Gu, Nicolas Suas-David, Jordy Bouwman, Yongdong Li, Harold Linnartz","doi":"10.1063/5.0207234","DOIUrl":"https://doi.org/10.1063/5.0207234","url":null,"abstract":"Pulsed discharge nozzles (PDNs) have been successfully used for decades to produce rotationally cold (Trot ∼ 20 K) radicals and ions of astrophysical interest and to characterize these species spectroscopically. In this work, an evolution of the PDN, the piezostack pulsed discharge nozzle (P2DN), is used for the first time to investigate the characteristics of the still poorly understood supersonic plasma expansion. The P2DN allows for a better control of the reservoir pressure of which an accurate measurement is required to characterize the plasma expansion. This new source, thus, gives the opportunity to further optimize the plasma conditions and extend its use to new target species. The spatial distribution of an argon plasma and the effect of the supersonic flow for different pressures are studied by combining a two-dimensional extended fluid model (extFM) and a direct simulation Monte Carlo (DSMC) method. The combined simulation is validated with experimental results obtained through emission spectroscopy associated with a group-code collisional-radiative model to retrieve the plasma parameters. The validated numerical approach (DSMC-extFM) allows for an accurate characterization of the plasma structure in our typical experimental conditions (a reservoir pressure ranging from 90 to 905 mbar). Thus, this simulation will be used in future studies to improve the plasma conditions to favor the synthesis of (transient) hydrocarbon species as found in space, by seeding the argon gas with a suitable precursor, such as acetylene.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase shifter based on two-dimensional electron system on a dielectric substrate 基于电介质衬底上二维电子系统的移相器

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0205254

K. R. Dzhikirba, D. A. Khudaiberdiev, A. Shuvaev, A. S. Astrakhantseva, I. V. Kukushkin, V. M. Muravev

引用次数: 0

Defect/disorder correlated modification of transport properties from hopping to tunneling processes in BaTiO3–LaFeO3 solid solution BaTiO3-LaFeO3 固溶体中从跳跃过程到隧道过程的输运特性的缺陷/无序相关改变

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0195109

P. Maneesha, Koyel Samantaray, Suresh Chandra Baral, R. Mittal, Mayanak K. Gupta, Somaditya Sen

{"title":"Defect/disorder correlated modification of transport properties from hopping to tunneling processes in BaTiO3–LaFeO3 solid solution","authors":"P. Maneesha, Koyel Samantaray, Suresh Chandra Baral, R. Mittal, Mayanak K. Gupta, Somaditya Sen","doi":"10.1063/5.0195109","DOIUrl":"https://doi.org/10.1063/5.0195109","url":null,"abstract":"Crystal structure, bandgap, and the changes in the charge conduction mechanisms in ceramics are interrelated, and the underlying physics unifies all these different phenomena. The experimental and theoretical evaluation of the electronic properties of the solid solution of (1 − x)BaTiO3–(x)LaFeO3 (x = 0, 0.015, 0.031, 0.062) is attempted in this work. Bandgap was observed to be tunable with La/Fe doping from 3.2 eV (x = 0) to 2.6 eV (x = 0.06), while the lattice disorder was found to increase. A theoretical assessment confirms a considerable shift of valence band maxima and conduction band minima with an introduction of additional defect states within the bandgap. Electron localization was also confirmed theoretically with doping. Such changes in the electronic properties were experimentally confirmed from dielectric/AC - conductivity/impedance spectroscopy studies. From different transportation models, hopping is a preferred mechanism in the less distorted BaTiO3. However, a large polaron tunneling process can be justified for the doped samples at lower temperatures. Only at higher temperatures, a small polaron tunneling can be justified for the doped samples. The transportation is affected by the grain boundaries as much as the grains themselves. A complete analysis using Nyquist plots reveals the competing contributions of these regions to the transportation mechanism and is correlated to the disorder/distortions in the lattice in terms of the formation of oxygen vacancies.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-temperature dielectric with excellent capacitive performance enabled by rationally designed traps in blends 通过在混合物中合理设计阱，实现具有优异电容性能的高温电介质

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0208131

Zhonghua Zhao, Shuo Zhang, Mingru Li, Yang Feng, Liuqing Yang, Shengtao Li

引用次数: 0

Polarization and coherence properties of a partially coherent elegant Laguerre–Gaussian vortex beam in turbulent plasma 湍流等离子体中部分相干优雅拉盖尔-高斯涡旋光束的偏振和相干特性

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0206079

Labiba F. Hassan, A. Alkelly, M. Khaled

{"title":"Polarization and coherence properties of a partially coherent elegant Laguerre–Gaussian vortex beam in turbulent plasma","authors":"Labiba F. Hassan, A. Alkelly, M. Khaled","doi":"10.1063/5.0206079","DOIUrl":"https://doi.org/10.1063/5.0206079","url":null,"abstract":"The analytical expressions for the cross-spectral density matrix elements of the partially coherent elegant Laguerre–Gaussian (eLG) vortex beam propagating through anisotropic turbulent plasma were derived based on the extended Huygens-Fresnel principle and used to study the changes in the polarization degree and the coherence degree of the partially coherent eLG vortex beam in the turbulent plasma. The numerical results show that the polarization degree of a partially coherent eLG vortex beam reaches a specific value (which is equal to the degree of polarization in the source plane) after a long propagation distance in the turbulent plasma. Moreover, this value is independent of the beam order, topological charge, correlation coefficient, wavelength of the source plane, anisotropy parameter, refractive index fluctuation variance, and outer and inner scales of the turbulent plasma. The results also show that with increasing distance, the coherence degree first decreases from unity and then oscillates around zero. However, this oscillation gradually disappears after traveling a long distance. Our results intuitively present the beam polarization and coherence properties through anisotropic hypersonic turbulence, which can be useful for optical communication in hypersonic turbulent environments.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoluminescence studies of the charge states of nitrogen vacancy centers in diamond after arsenic ion implantation and subsequent annealing 砷离子植入并随后退火后金刚石中氮空位中心电荷状态的光致发光研究

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0189911

Chenyang Huangfu, Yufei Zhang, Jinchen Hao, G. Jia, Haitao Wu, Xujie Wang, Wei Wang, Kaiyue Wang

{"title":"Photoluminescence studies of the charge states of nitrogen vacancy centers in diamond after arsenic ion implantation and subsequent annealing","authors":"Chenyang Huangfu, Yufei Zhang, Jinchen Hao, G. Jia, Haitao Wu, Xujie Wang, Wei Wang, Kaiyue Wang","doi":"10.1063/5.0189911","DOIUrl":"https://doi.org/10.1063/5.0189911","url":null,"abstract":"In this work, nitrogen vacancy (NV) centers of high nitrogen diamond implanted with arsenic ions were investigated by photoluminescence spectroscopy. The transition of the NV center charge state was discussed by the regularly changing laser excitation power and measurement temperature following high-temperature annealing. After high-temperature annealing, the amorphous layer generated by arsenic ion implantation is transformed into a graphitization layer, resulting in a decrease in the NV yield. The electric neutral NV (NV0) center and negatively charged NV (NV−) center are affected by both radiation recombination and Auger recombination with increasing laser power. Accompanied by the increasing measurement temperature, the intensities of NV centers gradually decreased and eventually quenched. In addition, the charge states of NV− and NV0 centers were undergoing a transition. The zero phonon line positions of NV centers were also red shift, it was attributed to the dominant role of electron–phonon interaction in the temperature-dependent displacement of diamond energy gaps. The full width at half maxima of NV center were broadened significantly at higher temperatures.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing ferroelectric characterization at nanoscale: A comprehensive approach for data processing in spectroscopic piezoresponse force microscopy 加强纳米级铁电特性分析：光谱压电响应力显微镜数据处理的综合方法

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0197226

H. Valloire, P. Quéméré, N. Vaxelaire, H. Kuentz, G. Le Rhun, Ł. Borowik

{"title":"Enhancing ferroelectric characterization at nanoscale: A comprehensive approach for data processing in spectroscopic piezoresponse force microscopy","authors":"H. Valloire, P. Quéméré, N. Vaxelaire, H. Kuentz, G. Le Rhun, Ł. Borowik","doi":"10.1063/5.0197226","DOIUrl":"https://doi.org/10.1063/5.0197226","url":null,"abstract":"Switching Spectroscopy Piezoresponse Force Microscopy (SSPFM) stands out as a powerful method for probing ferroelectric properties within materials subjected to incremental polarization induced by an external electric field. However, the dense data processing linked to this technique is a critical factor influencing the quality of obtained results. Furthermore, meticulous exploration of various artifacts, such as electrostatics, which may considerably influence the signal, is a key factor in obtaining quantitative results. In this paper, we present a global methodology for SSPFM data processing, accessible in open-source with a user-friendly Python application called PySSPFM. A ferroelectric thin film sample of potassium sodium niobate has been probed to illustrate the different aspects of our methodology. Our approach enables the reconstruction of hysteresis nano-loops by determining the PR as a function of applied electric field. These hysteresis loops are then fitted to extract characteristic parameters that serve as measures of the ferroelectric properties of the sample. Various artifact decorrelation methods are employed to enhance measurement accuracy, and additional material properties can be assessed. Performing this procedure on a grid of points across the surface of the sample enables the creation of spatial maps. Furthermore, different techniques have been proposed to facilitate post-treatment analysis, incorporating algorithms for machine learning (K-means), phase separation, and mapping cross correlation, among others. Additionally, PySSPFM enables a more in-depth investigation of the material by studying the nanomechanical properties during poling, through the measurement of the resonance properties of the cantilever–tip–sample surface system.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140965782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements 利用紫外辅助电容-电压测量法分析基于 β-Ga2O3 的 MOS 结构中的界面陷阱诱导壁架

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0203022

Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball

{"title":"Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements","authors":"Aditya K. Bhat, Hyun-Seop Kim, Abhishek Mishra, Matthew D. Smith, Michael J. Uren, Martin Kuball","doi":"10.1063/5.0203022","DOIUrl":"https://doi.org/10.1063/5.0203022","url":null,"abstract":"A ledge feature in the capacitance–voltage (CV) profiles of Ga2O3 MOS (metal–oxide–semiconductor) capacitors is investigated using UV-assisted CV measurements. A model is presented whereby the capacitance ledge is associated with carrier trapping in deep-level states at the Al2O3/Ga2O3 interface. Following UV assisted emptying of interface traps at a constant bias, a voltage ramp toward flatband results in a CV ledge when the trap recombination current becomes equal to the quasi-static sweep charging current. The ledge continues until all the traps below the corresponding pinned surface potential have been filled. Varying the UV energy varies the ledge voltage range and allows a density of states to be determined as a function of energy. A broad interface state peak with maximum density ∼8 × 1012 cm−2 eV−1 for deep trap energies lying between 2.4 and 4.1 eV below the conduction band (CB) edge is extracted. Using the conductance method, the interface trap density is also found to rise toward the CB edge in the range 0.25–0.45 eV below the CB edge, reaching a maximum density of ∼1 × 1012 cm−2 eV−1. Combining these two techniques, an interface trap distribution is estimated for almost the entirety of the bandgap of Ga2O3. This novel technique probes deep interface states where standard methods fail to quantify interface states reliably.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140963091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Imaging spatial plasmon mode of nanocavity formed by Au tip and Au nanorod lattice in tip-enhanced Raman spectroscopy 在尖端增强拉曼光谱中成像金尖端和金纳米棒晶格形成的纳米腔的空间等离子体模式

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0199473

Zhe He, Jue Wang, Rui Wang, Dmitry Kurouski

引用次数: 0

Laterally coupled photonic crystal surface emitting laser arrays 横向耦合光子晶体表面发射激光器阵列

Journal of Applied Physics Pub Date : 2024-05-17 DOI: 10.1063/5.0205483

C. Gautam, M. Pan, Y. Chen, T. Rotter, G. Balakrishnan, W. Zhou

引用次数: 0