基于电介质衬底上二维电子系统的移相器

K. R. Dzhikirba, D. A. Khudaiberdiev, A. Shuvaev, A. S. Astrakhantseva, I. V. Kukushkin, V. M. Muravev
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引用次数: 0

摘要

我们通过实验研究了通过电介质衬底上的二维电子系统(2DES)传输的电磁辐射所获得的相移。我们系统地研究了相移与辐射频率和砷化镓半导体衬底上二维电子系统电子密度的关系。我们开发的理论方法与实验结果非常吻合。我们展示了 105° 的实际相移。这些发现为设计能以受控和精确的方式操纵辐射相位的太赫兹设备铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phase shifter based on two-dimensional electron system on a dielectric substrate
We experimentally investigate phase shift gained by electromagnetic radiation transmitted through a two-dimensional electron system (2DES) on a dielectric substrate. We systematically examined the dependence of the phase shift on the radiation frequency and 2DES electron density for the GaAs semiconductor substrate. A theoretical approach was developed that found good agreement with experimental results. We demonstrate a practically achievable phase shift of 105°. Obtained findings pave the way for the design of terahertz devices that can manipulate the radiation phase in a controlled and precise manner.
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