IEEE Journal on Emerging and Selected Topics in Circuits and Systems最新文献_第8页

Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications 用于 5G/6G 应用的毫米波砷化镓超宽带中功率放大器和宽带大功率放大器

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2024-01-19 DOI: 10.1109/JETCAS.2024.3356010

Zi-Hao Fu;Ming-Xuan Li;Tzyh-Ghuang Ma;Chan-Shin Wu;Kun-You Lin

{"title":"Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications","authors":"Zi-Hao Fu;Ming-Xuan Li;Tzyh-Ghuang Ma;Chan-Shin Wu;Kun-You Lin","doi":"10.1109/JETCAS.2024.3356010","DOIUrl":"10.1109/JETCAS.2024.3356010","url":null,"abstract":"This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using \u0000<inline-formula> <tex-math>$0.15~mu text{m}$ </tex-math></inline-formula>\u0000 GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power (\u0000<inline-formula> <tex-math>$text{P}_{mathrm {sat}}$ </tex-math></inline-formula>\u0000) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of \u0000<inline-formula> <tex-math>$2times1$ </tex-math></inline-formula>\u0000 mm2. The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm \u0000<inline-formula> <tex-math>$text{P}_{mathrm {sat}}$ </tex-math></inline-formula>\u0000, and a PAE over 28% from 24 to 32 GHz with a \u0000<inline-formula> <tex-math>$2.4times1.1$ </tex-math></inline-formula>\u0000 mm2 chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"111-121"},"PeriodicalIF":4.6,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139949310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations 利用非零基极阻抗优化功率增益和输出功率的 185 至 240 GHz SiGe 功率放大器

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2024-01-16 DOI: 10.1109/JETCAS.2024.3355011

Xin Zhang;Nengxu Zhu;Fanyi Meng

{"title":"A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations","authors":"Xin Zhang;Nengxu Zhu;Fanyi Meng","doi":"10.1109/JETCAS.2024.3355011","DOIUrl":"10.1109/JETCAS.2024.3355011","url":null,"abstract":"It is commonly practiced in millimeter-wave and terahertz cascode amplifiers to enhance the power gain by shorting the base-impedance in the common-base transistor. However, it is found that the merit of high output power is not achieved simultaneously under the zero base-impedance scenarios. This paper theoretically analyzes the optimum designs by varying the base-impedances for power gain and output power level enhancement. In addition, numerically results are given to prove that non-zero base-impedances are key parameters towards gain and output power enhancements. Thus, each stages of the power amplifier must contain different and optimized base-impedances, based on their power gain and output power targets. To validate the design theory, a 220 GHz power amplifier is designed and fabricated in a 0.13-\u0000<inline-formula> <tex-math>$mu text{m}$ </tex-math></inline-formula>\u0000 SiGe technology. The measurement reveals that the amplifier achieves operation bandwidth of 185 to 240 GHz, power gain of 25 dB, and output \u0000<inline-formula> <tex-math>$P_{mathrm {1dB}}/P_{mathrm {SAT}}$ </tex-math></inline-formula>\u0000 of 7.3/9.5 dBm. It consumes 310~324 mW dc power and occupies a core area of 0.09 mm2.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"67-74"},"PeriodicalIF":4.6,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139949286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband Millimeter-Wave GaAs Dual-Function Switching Attenuators With Low Insertion Loss and Large Attenuation Range 具有低插入损耗和大衰减范围的宽带毫米波砷化镓双功能开关衰减器

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2024-01-16 DOI: 10.1109/JETCAS.2024.3354778

Yutong Wang;Bo Li;Feng Lin;Houjun Sun;Hongjiang Wu;Chunliang Xu;Yuan Fang;Zhiqiang Li

{"title":"Broadband Millimeter-Wave GaAs Dual-Function Switching Attenuators With Low Insertion Loss and Large Attenuation Range","authors":"Yutong Wang;Bo Li;Feng Lin;Houjun Sun;Hongjiang Wu;Chunliang Xu;Yuan Fang;Zhiqiang Li","doi":"10.1109/JETCAS.2024.3354778","DOIUrl":"10.1109/JETCAS.2024.3354778","url":null,"abstract":"This paper presents millimeter-wave (mmW) wide-band dual-function switching attenuator chips based on gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT). The broadband attenuator chips integrate the function of absorption single-pole-single-throw (SPST) switch by using balanced architecture. By analyzing the effects of transistor size and parasitic couplings from bias lines on mmW attenuator chips, the attenuation range is further improved. Based on the 90-nm GaAs pHEMT process, a 26~80 GHz attenuator chip I and a 40~110 GHz attenuator chip II were designed and measured, with chip sizes of \u0000<inline-formula> <tex-math>$1.65ast 0.85$ </tex-math></inline-formula>\u0000mm2 and \u0000<inline-formula> <tex-math>$1.30ast 0.80$ </tex-math></inline-formula>\u0000mm2, respectively. In the operating frequency band, the measured insertion losses (IL) of chips I and II are less than 2.8 dB and 2.2 dB, respectively, with the return losses (RL) of better than 12.4 dB and 11.6 dB. At the center frequency, the measured attenuation ranges of Chip I and II are \u0000<inline-formula> <tex-math>$1.4sim 34.4$ </tex-math></inline-formula>\u0000 dB and \u0000<inline-formula> <tex-math>$1.1sim 30.9$ </tex-math></inline-formula>\u0000 dB, respectively, and the 1dB compressed input power (\u0000<inline-formula> <tex-math>$IP_{mathrm {1dB}})$ </tex-math></inline-formula>\u0000 of both chips are greater than 21 dBm. To the best of authors’ knowledge, this is the first wide-band mmW GaAs pHEMT attenuator chip integrated with absorption SPST switching function.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"100-110"},"PeriodicalIF":4.6,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139949312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Broadband Doherty Power Amplifier Based on Single Loop Load Modulation Network 基于单回路负载调制网络的宽带 Doherty 功率放大器设计

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2024-01-15 DOI: 10.1109/JETCAS.2024.3354503

Ge Bai;Zhijiang Dai;Jingsong Wang;Cheng Bi;Weimin Shi;Jingzhou Pang;Mingyu Li

引用次数: 0

A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off 在 6dB 功率衰减时输出功率为 22dBm 且功率附加效率为 21% 的 39 GHz 类多赫蒂功率放大器

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2024-01-08 DOI: 10.1109/JETCAS.2024.3351075

Lang Chen;Lisheng Chen;Depeng Sun;Yichuang Sun;Yulin Pan;Xi Zhu

{"title":"A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off","authors":"Lang Chen;Lisheng Chen;Depeng Sun;Yichuang Sun;Yulin Pan;Xi Zhu","doi":"10.1109/JETCAS.2024.3351075","DOIUrl":"10.1109/JETCAS.2024.3351075","url":null,"abstract":"The design of a Doherty-like power amplifier for millimetre-wave (mm-wave) applications is presented in this work. The designed power amplifier employs a novel symmetrical load-modulated balanced amplifier (S-LMBA) architecture. This design is advantageous in minimizing the undesired impedance interaction often encountered in the classic LMBA approach. Such interactions are typically due to the use of a non-\u0000<inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula>\u0000 load at the isolation port of the output quadrature coupler. Moreover, magnitude and phase control networks are carefully designed to generate the specific magnitude and phase information for the designed S-LMBA. To demonstrate the proposed ideas, the S-LMBA is fabricated in a 45-nm CMOS SOI technology. At 39 GHz, a 22.1 dBm saturated output power (\u0000<inline-formula> <tex-math>$text{P}_{mathrm {sat}}$ </tex-math></inline-formula>\u0000) with a maximum power-added efficiency (PAE) of 25.7% is achieved. In addition, 1.68 times drain efficiency enhancement is obtained over an ideal Class-B operation, when the designed S-LMBA is operated at 6 dB power back-off. An average output power of 13.1 dBm with a PAE of 14.4% at an error vector magnitude (EVM\u0000<inline-formula> <tex-math>$_{mathrm {rms}}$ </tex-math></inline-formula>\u0000) above -22.5 dB and adjacent channel power ratio (ACPR) of -23 dBc is also achieved, when a 200 MHz single carrier 64-quadrature-amplitude-modulation (QAM) signal is used. Including all testing pads, the footprint of the designed S-LMBA is only 1.56 mm2.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"88-99"},"PeriodicalIF":4.6,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139949280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Guest Editorial Dynamical Neuro-AI Learning Systems: Devices, Circuits, Architecture and Algorithms 客座编辑动态神经-人工智能学习系统：设备、电路、架构和算法

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3343932

Jason K. Eshraghian;Arindam Basu;Corey Lammie;Shih-Chii Liu;Priydarshini Panda

引用次数: 0

IEEE Circuits and Systems Society Information 电气和电子工程师学会电路与系统协会信息

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3340568

引用次数: 0

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Publication Information 电气和电子工程师学会电路与系统新专题与选题期刊》出版信息

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3340572

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IEEE Journal on Emerging and Selected Topics in Circuits and Systems Information for Authors IEEE 《电路与系统新兴选题》期刊作者须知

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3340570

引用次数: 0

TechRxiv: Share Your Preprint Research with the World! TechRxiv：与世界分享您的预印本研究成果！

IF 4.6 2区工程技术

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-28 DOI: 10.1109/JETCAS.2023.3345229

引用次数: 0