Infomat最新文献

{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 5","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148132568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Back Cover Image","authors":"Yuchen Wang,&nbsp;Kun Liu,&nbsp;Henghui Xiao,&nbsp;Zhaorun Zhu,&nbsp;Chenqun Hong,&nbsp;Hongzhen Lin,&nbsp;Jian Wang,&nbsp;Decai Guo,&nbsp;Meinan Liu","doi":"10.1002/inf2.70128","DOIUrl":"https://doi.org/10.1002/inf2.70128","url":null,"abstract":"<p>Lithium-ion bridge connected ceramic and polymer electrolyte resolve the space charge effect for empowering solid-state Li batteries.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 3","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70128","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147563417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Back Cover Image","authors":"Yuchen Wang,&nbsp;Kun Liu,&nbsp;Henghui Xiao,&nbsp;Zhaorun Zhu,&nbsp;Chenqun Hong,&nbsp;Hongzhen Lin,&nbsp;Jian Wang,&nbsp;Decai Guo,&nbsp;Meinan Liu","doi":"10.1002/inf2.70128","DOIUrl":"10.1002/inf2.70128","url":null,"abstract":"<p>Lithium-ion bridge connected ceramic and polymer electrolyte resolve the space charge effect for empowering solid-state Li batteries.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 3","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70128","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147563416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computational design of two-dimensional MA2Z4 family field-effect transistor for future Ångström-scale CMOS technology nodes","authors":"Che Chen Tho,&nbsp;Zongmeng Yang,&nbsp;Shibo Fang,&nbsp;Shiying Guo,&nbsp;Liemao Cao,&nbsp;Chit Siong Lau,&nbsp;Fei Liu,&nbsp;Shengli Zhang,&nbsp;Jing Lu,&nbsp;L. K. Ang,&nbsp;Lain-Jong Li,&nbsp;Yee Sin Ang","doi":"10.1002/inf2.70096","DOIUrl":"10.1002/inf2.70096","url":null,"abstract":"&lt;p&gt;Advancing complementary metal–oxide–semiconductor (CMOS) technology into the sub-1-nm Ångström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming the short-channel effects due to their atomically thin bodies that significantly improves the gate control in aggressively scaled field-effect transistors (FETs). Among the growing library of 2D materials, MA&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt;Z&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt; family has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics. While experimental realization of sub-10-nm 2D FETs remains technologically demanding, computational device simulations using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for assessing the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MA&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt;Z&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt; family FETs. We review the physical properties of MoSi&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt;N&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt; that makes them compelling candidates for transistor applications, and the simulated device performance and optimization strategy of MA&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt;Z&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 &lt;msub&gt;\u0000 &lt;mo&gt; &lt;/mo&gt;\u0000 &lt;mn&gt;4&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;/mrow&gt;&lt;/math&gt; family FETs. Finally, we discuss the key challenges and research gaps, as well as the future directions of MA&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mrow&gt;\u0000 ","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 2","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70096","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147562323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A tunable microwave absorption metamaterial inspired by moths evading bat detection","authors":"Yijie Liu,&nbsp;Weimeng Chu,&nbsp;Jintang Zhou,&nbsp;Zhenyu Cheng,&nbsp;Yi Yan,&nbsp;Yuanming Yang,&nbsp;Ruiyang Tan,&nbsp;Shiju Liu,&nbsp;Ping Chen,&nbsp;Yucheng Wang,&nbsp;Lvtong Duan,&nbsp;Yao Ma,&nbsp;Xiangshuai Song,&nbsp;Zhengjun Yao","doi":"10.1002/inf2.70105","DOIUrl":"10.1002/inf2.70105","url":null,"abstract":"<p>Electromagnetic radiation in the current environment has become complex and uncontrollable due to the advancement of wireless technology. Traditional electromagnetic materials with fixed responses and performance after manufacturing, fail to meet the requirements for reconfigurable and multi-frequency protection. Inspired by the moth surface cilia to bend and evade bat sonar detection, our work introduces a metamaterial featuring broadband and tunable microwave absorption (MA) characteristics. In material systems, polyurethane (TPU) elastomers are used to reinforce CPLA matrices, balancing the mechanical properties and shape memory properties of 4D-printed composite materials for shape reconfigurable requirements under multi-physical fields. In structural design, we implement multi-unit encoding strategies to enlarge the dimensions of absorption regulation. In the optimization method, we provide a Deep Q-Network high-dimensional morphological intelligent optimization design method. The final 5 × 5 array achieves broadband, tunable MA effects in the 5.6–18 GHz range. Our work demonstrates a new path for electromagnetic absorption to evolve from static design to reconfigurable intelligence.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 3","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70105","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147564618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Water cluster triggered vitrification in HKUST-1 MOF crystal under pressure","authors":"Jianguo Sun,&nbsp;Chin Ho Kirk,&nbsp;Yunchuan Pu,&nbsp;Athulya S. Palakkal,&nbsp;Lewis Kien Juen Ting,&nbsp;Fei Wang,&nbsp;Kok Chan Chong,&nbsp;Tuo Wang,&nbsp;Saad Aldin Mohamed,&nbsp;Bin Liu,&nbsp;Jianwen Jiang,&nbsp;Anthony K. Cheetham,&nbsp;Dan Zhao,&nbsp;John Wang","doi":"10.1002/inf2.70100","DOIUrl":"10.1002/inf2.70100","url":null,"abstract":"<p>Metal–organic framework (MOF) glasses feature several unique dynamic and thermodynamic properties that differentiate them from their crystalline counterparts. However, the formation of MOF glasses usually requires the melt-quenching of molten MOFs from relatively high temperatures. In practice, this approach is quite limited because most MOFs decompose below their melting points. Herein, we demonstrate a direct crystal-to-glass transition in HKUST-1 MOF that has been achieved at room temperature and a relatively low pressure of &lt;1.0 GPa. The dramatic fall in the required pressure is shown to arise from the aggregation of coordinated polar water molecules to form water clusters that exhibit a pulling effect on the Cu–O_(ligand) bonds. Meanwhile, the departed fragment gets flipped unfavorably to prevent further regeneration of the bond. Accordingly, a grain boundary-free continuous porous framework in the glassy state is successfully formed and can be fabricated into membranes. Given their unique microporosity and grain boundary-free characteristics, such MOF glass membranes present new opportunities for chemical separation (both gases and liquids), electrochemistry, and catalysts, promising a new platform for MOF glasses.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 3","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70100","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147565956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-robust exchange bias and spin-orbit torque switching in van der Waals heterostructure","authors":"Obaid Iqbal,&nbsp;Zahir Muhammad,&nbsp;Wajid Ali,&nbsp;Fuzhou Wang,&nbsp;Md Shafayat Hossain,&nbsp;Azizur Rahman,&nbsp;Saleh S. Alarfaji,&nbsp;Yue Zhang,&nbsp;Xiaoyang Lin,&nbsp;M. Zahid Hasan,&nbsp;Weisheng Zhao","doi":"10.1002/inf2.70064","DOIUrl":"10.1002/inf2.70064","url":null,"abstract":"<p>Exchange bias (EB) in ferromagnetic/antiferromagnetic materials is a novel idea for high-density spintronic devices. Van der Waals (vdW) heterostructures offer a promising solution, enabling a “Lego” like assembly without interface or adding dopants, opposite to traditional heterostructures. However, in typical vdW heterostructures, the EB effect exists at low temperatures and only one polarity. This work addresses these challenges by using Fe₃GaTe₂/NiPS₃ heterostructures whose EB can survive at higher temperatures and polarities flip. The exchange bias (EB) of the device persists up to 150 K and can have its polarity reversed by altering the stacking direction during fabrication. Simultaneously, an anomalous Hall effect (AHE) with a coercive field of approximately 0.9 T is observed at 5 K and remains detectable up to 300 K. The device further shows the spin-orbit torque (SOT)<i>-</i>induced magnetization switching up to room temperature. Under low field-cooling conditions (e.g., ≥2 mT), we observe an EB field (<i>H</i>_EB) up to 1 mT, which reached 110 mT at 1.5 T. <i>H</i>_EB becomes zero above 150 K, showing a non-discernible EB effect, whereas the AHE persists up to room temperature. Similarly, in the Fe₃GaTe₂/NiPS₃ and NiPS₃/Fe₃GaTe₂, different stacking layers at the interface induce the net magnetic effect and flip the magnetization direction due to magnetic domains at the Fe₃GaTe₂ layer. The results show that strong interlayer coupling within these layers generates significant AHE and high <i>H</i>_EB with blocking temperatures up to 150 K, making it suitable for the new 2D spintronic device applications.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 2","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70064","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147563283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced blue emission in silica-confined mixed-halide perovskite quantum dots via releasing residual stress","authors":"Jiayi Huang,&nbsp;Kehao Wang,&nbsp;Peng Wang,&nbsp;Xingliang Dai,&nbsp;Zhizhen Ye,&nbsp;Haiping He,&nbsp;Chao Fan","doi":"10.1002/inf2.70103","DOIUrl":"10.1002/inf2.70103","url":null,"abstract":"<p>Perovskite quantum dots (QDs) confined within solid matrices via calcination methods <i>exhibit superior</i> environmental stability compared to colloidal perovskite QDs. However, matrix-confined perovskite QDs generally display lower photoluminescence quantum yield (PLQY) than their colloidal counterparts, especially in the case of blue-emitting mixed-halide CsPb(Cl/Br)₃ QDs. Here, we identify residual tensile stress, originating from the mismatch in thermal expansion coefficients between the perovskite and the matrix, as a key factor responsible for the suppressed luminous efficiency in silica-confined CsPb(Cl/Br)₃ QDs. Furthermore, we demonstrate that a simple hydrothermal treatment enables stress release in these silica-confined QDs, leading to a significant enhancement in their PLQY. The resulting stress-free silica-confined CsPb(Cl/Br)₃ QDs exhibit record-high PLQYs among reported blue-emitting perovskite QDs synthesized via calcination methods, even approaching the PLQY of colloidal QDs. In addition, we find that stress release effectively suppresses both photoinduced halide segregation and thermal-induced emission quenching in these silica-confined CsPb(Cl/Br)₃ QDs. This work provides a new perspective for achieving blue-emitting perovskite QDs with high PLQY and stability.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 2","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70103","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147570133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Regulation of charge distribution for highly efficient colloidal quantum-well light-emitting diodes with deep-red emissions","authors":"Wenhui Fang,&nbsp;Chenlin Wang,&nbsp;Dongxiang Luo,&nbsp;Jun Gao,&nbsp;Yuan Liu,&nbsp;Jingyan Liao,&nbsp;Sui-Dong Wang,&nbsp;Zhengji Xu,&nbsp;Zhenyu Yang,&nbsp;Shaolin Liao,&nbsp;Yuan Gao,&nbsp;Baiquan Liu","doi":"10.1002/inf2.70099","DOIUrl":"https://doi.org/10.1002/inf2.70099","url":null,"abstract":"<p>Two-dimensional (2D) nanocrystals have recently risen to be highly promising for optoelectronics and microelectronics. However, it is a big challenge for 2D nanocrystals in the applications of long-wavelength regions (e.g., ≥660 nm) and the development of 2D nanocrystal light-emitting diodes (LEDs) with long-wavelength emissions is in its infancy. Here, colloidal quantum-well LEDs (CQW-LEDs) with long-wavelength emissions (671 nm) have been developed, simultaneously achieving high efficiency, extremely low efficiency roll-off, high luminance, ultra-saturated emission with CIE coordinates of (0.719, 0.280), and excellent color stability. The photoluminescence quantum yield of designed CdSe/CdZnS core/shell CQW films is as high as 92%. The resultant CQW-LEDs exhibit an external quantum efficiency (EQE) of 17.45% and a luminance of 9335 cd m⁻², which are record values for 2D nanocrystal LEDs with long-wavelength emissions. Experiments and simulations reveal that the high performance is attributed to the great enhancement of charge balance, which is fulfilled by the employment of effective triple hole transport layers. The strategy also enables red CQW-LEDs to achieve an EQE of 20.41%. Such results provide a new approach to obtain CQW-LEDs, pave the way to realize superior performance 2D nanocrystal LEDs with long-wavelength emissions, and give a deep insight to regulate charge distribution for nanocrystal LEDs.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 3","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70099","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147564826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin-sensitive multifunctional devices based on lateral graphene/MoS2 heterostructures","authors":"Shun Song,&nbsp;Lu Qin,&nbsp;Juan Lyu,&nbsp;Zhi Wang,&nbsp;Jian Gong,&nbsp;Shenyuan Yang","doi":"10.1002/inf2.70111","DOIUrl":"10.1002/inf2.70111","url":null,"abstract":"<p>Using first-principles calculations and quantum transport simulations, we simulated multifunctional devices based on lateral graphene/MoS₂ heterostructures, including rectifiers, spin filters, and optoelectronic devices. We investigated the effects of doping, bias voltage, gate voltage, and interface configurations on the device performance. We considered two types of lateral graphene/MoS₂ heterostructures, with graphene connected to either the S edge (C-S) or Mo edge (C-Mo) of the MoS₂. Our calculations show magnetic coupling at the graphene/MoS₂ interfaces even though they are composed of non-magnetic materials, which is consistent with previous theoretical studies. The spin polarization effects degraded the rectification ratios of the graphene/MoS₂ rectifiers. However, n-type doping of MoS₂ could significantly enhance the rectification ratio of the C-S device to 10⁵ and increase the current by an order of magnitude. The C-Mo device was shown to be highly suitable for spin filter applications, with a spin current polarization ratio of almost 100% under bias and gate voltage modulation. For optoelectronic applications, both types of lateral graphene/MoS₂ heterostructures exhibited high photocurrent peaks across the infrared, visible, and/or ultraviolet light regions, with a maximum photocurrent of 13 μA/mm² and suitable bias and gate voltages. Our study reveals the magnetic multifunctional nature of lateral graphene/MoS₂ heterostructure devices, and can serve as a theoretical guide for the design and modulation of high-performance multifunctional devices based on two-dimensional lateral heterostructures.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"8 3","pages":""},"PeriodicalIF":22.3,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.70111","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147563402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}