单一混合过氧化物中的同步电阻开关和整流效应

IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Infomat Pub Date : 2024-06-17 DOI:10.1002/inf2.12562
Xuefen Song, Junran Zhang, Yuchi Qian, Zhongjing Xia, Jinlian Chen, Hao Yin, Jing Liu, Linbo Feng, Tianyu Liu, Zihong Zhu, Yuyang Hua, You Liu, Jiaxiao Yuan, Feixiang Ge, Dawei Zhou, Mubai Li, Yang Hang, Fangfang Wang, Tianshi Qin, Lin Wang
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引用次数: 0

摘要

具有自然耦合电子-离子动力学的卤化物过氧化物在非易失性存储器应用方面具有巨大潜力。自整流忆阻器可以避免潜入电流并简化器件配置,因此前景广阔。在此,我们首次报道了一种在单一包晶石 (NHCINH3)3PbI5 (简称 (IFA)3PbI5)中实现的自整流忆阻器,这种忆阻器被 Ag 和 ITO 电极夹在中间,是交叉棒阵列器件配置中最简单的单元。(IFA)3PbI5 中的碘离子很容易被激活,其中在体中的迁移促成了电阻滞后,而在界面上与 Ag 的反应则促成了 AgI 的自发形成。n 型 AgI 和 p 型 (IFA)3PbI5 的完美结合产生了类似 p-n 二极管的整流功能。这种自整流忆阻器的设定功耗和电压都达到了创纪录的低水平。这项研究强调,过氧化物中离子的多功能性可以简化未来存储器件的制造程序、降低编程功耗并提高集成密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Simultaneous resistance switching and rectifying effects in a single hybrid perovskite

Simultaneous resistance switching and rectifying effects in a single hybrid perovskite

Simultaneous resistance switching and rectifying effects in a single hybrid perovskite

Halide perovskites with naturally coupled electron-ion dynamics hold great potential for nonvolatile memory applications. Self-rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self-rectifying memristor firstly achieved in a single perovskite (NHCINH3)3PbI5 (abbreviated as (IFA)3PbI5), which is sandwiched by Ag and ITO electrodes as the simplest cell in a crossbar array device configuration. The iodide ions of (IFA)3PbI5 can be easily activated, of which the migration in the bulk contributes to the resistance hysteresis and the reaction with Ag at the interface contributes to the spontaneous formation of AgI. The perfect combination of n-type AgI and p-type (IFA)3PbI5 gives rise to the rectification function like a p–n diode. Such a self-rectifying memristor exhibits the record-low set power consumption and voltage. This work emphasizes that the multifunction of ions in perovskites can simplify the fabrication procedure, decrease the programming power, and increase the integration density of future memory devices.

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来源期刊
Infomat
Infomat MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
37.70
自引率
3.10%
发文量
111
审稿时长
8 weeks
期刊介绍: InfoMat, an interdisciplinary and open-access journal, caters to the growing scientific interest in novel materials with unique electrical, optical, and magnetic properties, focusing on their applications in the rapid advancement of information technology. The journal serves as a high-quality platform for researchers across diverse scientific areas to share their findings, critical opinions, and foster collaboration between the materials science and information technology communities.
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