Infomat最新文献

{"title":"X-ray-ultraviolet–visible-near-infrared photoresponses realized in a lead-free hybrid perovskite ferroelectric through light-induced ferro-pyro-phototronic effect","authors":"Dongying Fu,&nbsp;Yanli Ma,&nbsp;Shufang Wu,&nbsp;Lin Pan,&nbsp;Qi Wang,&nbsp;Ruifang Zhao,&nbsp;Xian-Ming Zhang,&nbsp;Junhua Luo","doi":"10.1002/inf2.12602","DOIUrl":"10.1002/inf2.12602","url":null,"abstract":"<p>Due to the built-in electric field induced by spontaneous polarization in hybrid perovskite (HP) ferroelectrics, the devices based on them exhibit excellent performance in self-powered photodetection. However, most of the self-powered photodetector are made of lead-based HP ferroelectrics and have a relatively narrow photoresponse waveband. Although lead-free HPs solve the problem of lead toxicity, their optoelectronic performance is inferior to that of lead-based HPs and photoresponse waveband is limited by its optical band gap, which hinders their further application. To solve this problem, herein, a lead-free HP ferroelectric (HDA)BiI₅ (HDA is hexane-1,6-diammonium) with large spontaneous polarization shows an enhanced photocurrent and achieves x-ray-ultraviolet–visible-near-infrared (x-ray-UV–Vis–NIR) photoresponse through the ferro-pyro-phototronic (FPP) effect. The ferroelectric, pyroelectric, and photovoltaic characteristics coupled together in a single-phase (HDA)BiI₅ ferroelectric is an effective way to improve the performance of the devices. What is particularly attractive is that the FPP effect not only improves the optoelectronic performance of (HDA)BiI₅, but also achieves broadband photoresponses beyond its optical absorption range. Especially, the current boosting with an exceptional contrast of ~1100% and 2400% under 520 and 637 nm, respectively, which is associated with FPP effect. Meanwhile, single crystal self-powered photodetector based on (HDA)BiI₅ also exhibit significant FPP effects even under high-energy x-ray, which owns an outstanding sensitivity of 170.7 μC Gy⁻¹ cm⁻² and a lower detection limit of 266 nGy s⁻¹ at 0 V bias. Therefore, it is of great significance to study the coupling of multiple physical effects and improve device performance based on lead-free HP ferroelectrics.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 10","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12602","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"650 ps SET speed in Ge2Sb2Te5 phase change memory induced by TiO2 dielectric crystal plane","authors":"Ruizhe Zhao,&nbsp;Ke Gao,&nbsp;Rongjiang Zhu,&nbsp;Zhuoran Zhang,&nbsp;Qiang He,&nbsp;Ming Xu,&nbsp;Niannian Yu,&nbsp;Hao Tong,&nbsp;Xiangshui Miao","doi":"10.1002/inf2.12598","DOIUrl":"10.1002/inf2.12598","url":null,"abstract":"<p>Crystallization speed of phase change material is one of the main obstacles for the application of phase change memory (PCM) as storage class memory in computing systems, which requires the combination of nonvolatility with ultra-fast operation speed in nanoseconds. Here, we propose a novel approach to speed up crystallization process of the only commercial phase change chalcogenide Ge₂Sb₂Te₅ (GST). By employing TiO₂ as the dielectric layer in phase change device, operation speed of 650 ps has been achieved, which is the fastest among existing representative PCM, and is comparable to the programing speed of commercial dynamic random access memory (DRAM). Because of its octahedral atomic configuration, TiO₂ can provide nucleation interfaces for GST, thus facilitating the crystal growth at the determinate interface area. Ti–O–Ti–O four-fold rings on the (110) plane of tetragonal TiO₂ is critical for the fast-atomic rearrangement in the amorphous matrix of GST that enables ultra-fast operation speed. The significant improvement of operation speed in PCM through incorporating standard dielectric material TiO₂ in DRAM paves the way for the application of phase change memory in high performance cache-type data storage.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 9","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12598","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible perovskite photodetector with room-temperature self-healing capability without external trigger","authors":"Guoyi Li,&nbsp;Shenghong Li,&nbsp;Jahangeer Ahmed,&nbsp;Wei Tian,&nbsp;Liang Li","doi":"10.1002/inf2.12594","DOIUrl":"10.1002/inf2.12594","url":null,"abstract":"<p>Flexible perovskite photodetectors (FPDs) are promising for novel wearable devices in bionics, robotics and health care. However, their performance degradation and instability during operations remain a grand challenge. Superior flexibility and spontaneous functional repair of devices without the need for any external drive or intervention are ideal goals for FPDs. Herein, by using phenyl disulfide instead of alkyl disulfide as a crosslinking agent, disulfide bonds with lower bond energy are introduced, thus endowing the polyurethane network (SCPU) with the ability of self-healing at room temperature. SCPU is filled to the grain boundary of perovskite film, which not only improves the crystal quality of perovskite and mechanical stability of FPD but also enables FPD to self-heal at room temperature. As a result, the as-prepared FPD exhibits a superior responsivity of 0.4 A W⁻¹, a high specific detectivity of 2.5 × 10¹¹ Jones and 2 μs fast response time in a self-powered mode. More importantly, the FPD still retained 91% of the initial photo responsivity after 9000 times of bending upon cyclic healing. This polymer doping strategy provides an effective solution for stable operation and room-temperature self-healing for FPDs.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 11","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12594","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141523767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-sensitive and fast MXene/silicon photodetector for single-pixel X-ray imaging","authors":"Yance Chen,&nbsp;Yue Dai,&nbsp;Srikrishna Chanakya Bodepudi,&nbsp;Xinyu Liu,&nbsp;Yuan Ma,&nbsp;Shiyu Xing,&nbsp;Dawei Di,&nbsp;Feng Tian,&nbsp;Xin Ming,&nbsp;Yingjun Liu,&nbsp;Kai Pang,&nbsp;Fei Xue,&nbsp;Yunyan Zhang,&nbsp;Zexin Yu,&nbsp;Yaping Dan,&nbsp;Oleksiy V. Penkov,&nbsp;Yishu Zhang,&nbsp;Dianyu Qi,&nbsp;Wenzhang Fang,&nbsp;Yang Xu,&nbsp;Chao Gao","doi":"10.1002/inf2.12596","DOIUrl":"10.1002/inf2.12596","url":null,"abstract":"<p>The demand for high-performance X-ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X-ray detectors are often susceptible to chemical and irradiation instability, complex fabrication processes, hazardous components, and difficult compatibility. Here, we investigate a two-dimensional (2D) material with a relatively low atomic number, Ti₃C₂T_<i>x</i> MXenes, and single crystal silicon for X-ray detection and single-pixel imaging (SPI). We fabricate a Ti₃C₂T_<i>x</i> MXene/Si X-ray detector demonstrating remarkable optoelectronic performance. This detector exhibits a sensitivity of 1.2 × 10⁷ μC Gy_air⁻¹ cm⁻², a fast response speed with a rise time of 31 μs, and an incredibly low detection limit of 2.85 nGy_air s⁻¹. These superior performances are attributed to the unique charge coupling behavior under X-ray irradiation via intrinsic polaron formation. The device remains stable even after 50 continuous hours of high-dose X-ray irradiation. Our device fabrication process is compatible with silicon-based semiconductor technology. Our work suggests new directions for eco-friendly X-ray detectors and low-radiation imaging system.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 9","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12596","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface chemistry of electrode materials toward improving electrolyte-wettability: A method review","authors":"Lei Zhao,&nbsp;Yuanyou Peng,&nbsp;Peiyao Dou,&nbsp;Yuan Li,&nbsp;Tianqi He,&nbsp;Fen Ran","doi":"10.1002/inf2.12597","DOIUrl":"10.1002/inf2.12597","url":null,"abstract":"<p>The electrolyte-wettability at electrode material/electrolyte interface is a critical factor that governs the fundamental mechanisms of electrochemical reaction efficiency and kinetics of electrode materials in practical electrochemical energy storage. Therefore, the design and construction of electrode material surfaces with improved electrolyte-wettability has been demonstrated to be important to optimize electrochemical energy storage performance of electrode material. Here, we comprehensively summarize advanced strategies and key progresses in surface chemical modification for enhancing electrolyte-wettability of electrode materials, including polar atom doping by post treatment, introducing functional groups, grafting molecular brushes, and surface coating by in situ reaction. Specifically, the basic principles, characteristics, and challenges of these surface chemical strategies for improving electrolyte-wettability of electrode materials are discussed in detail. Finally, the potential research directions regarding the surface chemical strategies and advanced characterization techniques for electrolyte-wettability in the future are provided. This review not only insights into the surface chemical strategies for improving electrolyte-wettability of electrode materials, but also provides strategic guidance for the electrolyte-wettability modification and optimization of electrode materials in pursuing high-performance electrochemical energy storage devices.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 11","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12597","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance 110 kVp hard x-ray detector based on all-crystalline-surface passivated perovskite single crystals","authors":"Juyoung Ko,&nbsp;Beomjun Park,&nbsp;Jangwon Byun,&nbsp;Sandeep Pandey,&nbsp;Ajin Jo,&nbsp;Joo-Hong Lee,&nbsp;Wonho Lee,&nbsp;Jin-Wook Lee,&nbsp;Nam-Gyu Park,&nbsp;Man-Jong Lee","doi":"10.1002/inf2.12560","DOIUrl":"10.1002/inf2.12560","url":null,"abstract":"<p>Halide perovskite single crystals (SCs) have attracted much attention for their application in high-performance x-ray detectors owing to their desirable properties, including low defect density, high mobility–lifetime product (<i>μτ</i>), and long carrier diffusion length. However, suppressing the inherent defects in perovskites and overcoming the ion migration primarily caused by these defects remains a challenge. This study proposes a facile process for dipping Cs_0.05FA_0.9MA_0.05PbI₃ SCs synthesized by a solution-based inverse temperature crystallization method into a 2-phenylethylammonium iodide (PEAI) solution to reduce the number of defects, inhibit ion migration, and increase x-ray sensitivity. Compared to conventional spin coating, this simple dipping process forms a two-dimensional PEA₂PbI₄ layer on all SC surfaces without further treatment, effectively passivating all surfaces of the inherently defective SCs and minimizing ion migration. As a result, the PEAI-treated perovskite SC-based x-ray detector achieves a record x-ray sensitivity of 1.3 × 10⁵ μC Gy_air⁻¹ cm⁻² with a bias voltage of 30 V at realistic clinical dose rates of 1–5 mGy s⁻¹ (peak potential of 110 kVp), which is 6 times more sensitive than an untreated SC-based detector and 3 orders of magnitude more sensitive than a commercial α-Se-based detector. Furthermore, the PEAI-treated-perovskite SC-based x-ray detector exhibits a low detection limit (73 nGy s⁻¹), improved x-ray response, and clear x-ray images by a scanning method, highlighting the effectiveness of the PEAI dipping approach for fabricating next-generation x-ray detectors.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 8","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12560","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simultaneous resistance switching and rectifying effects in a single hybrid perovskite","authors":"Xuefen Song,&nbsp;Junran Zhang,&nbsp;Yuchi Qian,&nbsp;Zhongjing Xia,&nbsp;Jinlian Chen,&nbsp;Hao Yin,&nbsp;Jing Liu,&nbsp;Linbo Feng,&nbsp;Tianyu Liu,&nbsp;Zihong Zhu,&nbsp;Yuyang Hua,&nbsp;You Liu,&nbsp;Jiaxiao Yuan,&nbsp;Feixiang Ge,&nbsp;Dawei Zhou,&nbsp;Mubai Li,&nbsp;Yang Hang,&nbsp;Fangfang Wang,&nbsp;Tianshi Qin,&nbsp;Lin Wang","doi":"10.1002/inf2.12562","DOIUrl":"10.1002/inf2.12562","url":null,"abstract":"<p>Halide perovskites with naturally coupled electron-ion dynamics hold great potential for nonvolatile memory applications. Self-rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self-rectifying memristor firstly achieved in a single perovskite (NHCINH₃)₃PbI₅ (abbreviated as (IFA)₃PbI₅), which is sandwiched by Ag and ITO electrodes as the simplest cell in a crossbar array device configuration. The iodide ions of (IFA)₃PbI₅ can be easily activated, of which the migration in the bulk contributes to the resistance hysteresis and the reaction with Ag at the interface contributes to the spontaneous formation of AgI. The perfect combination of n-type AgI and p-type (IFA)₃PbI₅ gives rise to the rectification function like a p–n diode. Such a self-rectifying memristor exhibits the record-low set power consumption and voltage. This work emphasizes that the multifunction of ions in perovskites can simplify the fabrication procedure, decrease the programming power, and increase the integration density of future memory devices.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 9","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12562","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141523768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Revealing processing stability landscape of organic solar cells with automated research platforms and machine learning","authors":"Xiaoyan Du,&nbsp;Larry Lüer,&nbsp;Thomas Heumueller,&nbsp;Andrej Classen,&nbsp;Chao Liu,&nbsp;Christian Berger,&nbsp;Jerrit Wagner,&nbsp;Vincent M. Le Corre,&nbsp;Jiamin Cao,&nbsp;Zuo Xiao,&nbsp;Liming Ding,&nbsp;Karen Forberich,&nbsp;Ning Li,&nbsp;Jens Hauch,&nbsp;Christoph J. Brabec","doi":"10.1002/inf2.12554","DOIUrl":"10.1002/inf2.12554","url":null,"abstract":"<p>We use an automated research platform combined with machine learning to assess and understand the resilience against air and light during production of organic photovoltaic (OPV) devices from over 40 donor and acceptor combinations. The standardized protocol and high reproducibility of the platform results in a dataset of high variety and veracity to deploy machine learning models to encounter links between stability and chemical, energetic, and morphological structure. We find that the strongest predictor for air/light resilience during production is the effective gap <i>E</i>_g,eff which points to singlet oxygen rather than the superoxide anion being the dominant agent in degradation under processing conditions. A similarly good prediction of air/light resilience can also be achieved by considering only features from chemical structure, that is, information which is available prior to any experimentation.</p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 7","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12554","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141341420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non-fullerene acceptors with heteroatom substitution on the core moiety for efficient organic photovoltaics","authors":"Feng Qi,&nbsp;Baobing Fan,&nbsp;Qunping Fan,&nbsp;Alex K.-Y. Jen","doi":"10.1002/inf2.12595","DOIUrl":"10.1002/inf2.12595","url":null,"abstract":"<p>Organic photovoltaics (OPVs) represent one of the most promising photovoltaic technologies owing to their high capacity to convert solar energy to electricity. With the continuous structure upgradation of photovoltaic materials, especially that of non-fullerene acceptors (NFAs), the OPV field has witnessed rapid progress with power conversion efficiency (PCE) exceeding 19%. However, it remains challenging to overcome the intrinsic trade-off between the photocurrent and photovoltage, restricting the further promotion of the OPV efficiency. In this regard, it is urgent to further tailor the structure of NFAs to broaden their absorption spectra while mitigating the energy loss of relevant devices concomitantly. Heteroatom substitution on the fused-ring π-core of NFAs is an efficient way to achieve this goal. In addition to improve the near-infrared light harvest by strengthening the intramolecular charge transfer, it can also enhance the molecular stacking via forming multiple noncovalent interactions, which is favorable for reducing the energetic disorder. Therefore, in this review we focus on the design rules of NFAs, including the polymerized NFAs, of which the core moiety is substituted by various kinds of heteroatoms. We also afford a comprehensive understanding on the structure–property−performance relationships of these NFAs. Finally, we anticipate the challenges restricting the efficiency promotion and industrial utilization of OPV, and provide potential solutions based on the further heteroatom optimization on NFA core-moiety.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 8","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12595","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141353938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-throughput combinatorial approach expedites the synthesis of a lead-free relaxor ferroelectric system","authors":"Di Zhang,&nbsp;Katherine J. Harmon,&nbsp;Michael J. Zachman,&nbsp;Ping Lu,&nbsp;Doyun Kim,&nbsp;Zhan Zhang,&nbsp;Nicholas Cucciniello,&nbsp;Reid Markland,&nbsp;Ken William Ssennyimba,&nbsp;Hua Zhou,&nbsp;Yue Cao,&nbsp;Matthew Brahlek,&nbsp;Hao Zheng,&nbsp;Matthew M. Schneider,&nbsp;Alessandro R. Mazza,&nbsp;Zach Hughes,&nbsp;Chase Somodi,&nbsp;Benjamin Freiman,&nbsp;Sarah Pooley,&nbsp;Sundar Kunwar,&nbsp;Pinku Roy,&nbsp;Qing Tu,&nbsp;Rodney J. McCabe,&nbsp;Aiping Chen","doi":"10.1002/inf2.12561","DOIUrl":"10.1002/inf2.12561","url":null,"abstract":"<p>Developing novel lead-free ferroelectric materials is crucial for next-generation microelectronic technologies that are energy efficient and environment friendly. However, materials discovery and property optimization are typically time-consuming due to the limited throughput of traditional synthesis methods. In this work, we use a high-throughput combinatorial synthesis approach to fabricate lead-free ferroelectric superlattices and solid solutions of (Ba_0.7Ca_0.3)TiO₃ (BCT) and Ba(Zr_0.2Ti_0.8)O₃ (BZT) phases with continuous variation of composition and layer thickness. High-resolution x-ray diffraction (XRD) and analytical scanning transmission electron microscopy (STEM) demonstrate high film quality and well-controlled compositional gradients. Ferroelectric and dielectric property measurements identify the “optimal property point” achieved at the composition of 48BZT–52BCT. Displacement vector maps reveal that ferroelectric domain sizes are tunable by varying {BCT–BZT}_<i>N</i> superlattice geometry. This high-throughput synthesis approach can be applied to many other material systems to expedite new materials discovery and properties optimization, allowing for the exploration of a large area of phase space within a single growth.</p><p>\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":48538,"journal":{"name":"Infomat","volume":"6 9","pages":""},"PeriodicalIF":22.7,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12561","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141523769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}