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ESD-immunity Study of High-voltage nLDMOS with Vertical Parasitic Schottky Structures in the Source End 源端垂直寄生肖特基结构高压nLDMOS的抗静电性研究
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971482
Xing-Chen Mai, Shen-Li Chen, Jhong-Yi Lai, Zhi-Wei Liu, Yu-Jie Chung
{"title":"ESD-immunity Study of High-voltage nLDMOS with Vertical Parasitic Schottky Structures in the Source End","authors":"Xing-Chen Mai, Shen-Li Chen, Jhong-Yi Lai, Zhi-Wei Liu, Yu-Jie Chung","doi":"10.1109/IET-ICETA56553.2022.9971482","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971482","url":null,"abstract":"In this paper, a TSMC $0.18- {mu} mathrm{m}$ BCD process is used to realize high-voltage n-LDMOS devices. And then, the source side $n^{{+}}$ layer of the reference device is removed, so that the source terminal will make a parasitic Schottky device. Next, in this paper, we will evaluate its impacts on the discharge current capability. There are four kinds of tested devices in this work, which are the reference, with whole source -Schottky MM, and removed half source electrode MN and maked half Schottky in source end NM type devices, respectively. According to the TLP testing results, three important values of snapback curve can be obtained: trigger voltage (${mathrm{V}}_{{mathrm t1}}$), holding voltage (${mathrm{V}}_{{mathrm{h}}}$), and secondary breakdown current (${mathrm{I}}_{{mathrm{t}}2}$). Finally, it can be concluded that if a Schottky device is added to the source terminal, the on-resistance will be increased due to the series connection of this Schottky device, then the trigger voltage can be increased about 2V and holding voltage increased about 8V.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"93 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84091784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy Saving Potential Evaluation for U-V Connection Power System-Case Study in Taipower U-V连接电力系统的节能潜力评估——以台湾电力公司为例
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971673
Meilan Chen, Pei-Gang Chen, Che-Yu Lu
{"title":"Energy Saving Potential Evaluation for U-V Connection Power System-Case Study in Taipower","authors":"Meilan Chen, Pei-Gang Chen, Che-Yu Lu","doi":"10.1109/IET-ICETA56553.2022.9971673","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971673","url":null,"abstract":"There have always been many disagreements over applying open-wye open-delta transformer connection for supplying small business users. However, as the most commonly used power supply method for Taiwan’s $3Phi 3mathrm{W}220mathrm{V}$ system, it is not without its advantages. There are more reasons for being stigmatized because of user misuse. This study intends to discuss this electric utility system from the point of view of energy saving, and try to propose improvement schemes.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"5 4 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74866847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Establish a Dynamic Detection System for Metal Bicycle Frame Defects Based on YOLO Object Detection 建立基于YOLO目标检测的金属自行车车架缺陷动态检测系统
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971568
Su Kuan-Ying, Chen Ming-Fei, Tsai Po-Cheng, Tsai Cheng-Han
{"title":"Establish a Dynamic Detection System for Metal Bicycle Frame Defects Based on YOLO Object Detection","authors":"Su Kuan-Ying, Chen Ming-Fei, Tsai Po-Cheng, Tsai Cheng-Han","doi":"10.1109/IET-ICETA56553.2022.9971568","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971568","url":null,"abstract":"The purpose of this research is to develop a real-time bicycle frame's defect detection system using YOLO (You Only Look Once) and machine vision. Firstly, the defect locations are manually selected and a database is established. Next, a Darknet method is used to train the YOLO model. Its static detection accuracy rate is 92.6%, and then the static training model is combined with a robotic arm and an industrial camera to perform dynamic detection verification. The result shows that its detection rate reaches 87%. Finally, the above-mentioned defect detection technology is used with the detection machine to complete the development of the online defect detection system.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"29 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88138545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research on Novel Thermal Insulation Structure of CMOS-MEMS Thermopile CMOS-MEMS热电堆新型保温结构研究
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971595
Kai-Chung Yu, Chih-Hsiung Shen
{"title":"Research on Novel Thermal Insulation Structure of CMOS-MEMS Thermopile","authors":"Kai-Chung Yu, Chih-Hsiung Shen","doi":"10.1109/IET-ICETA56553.2022.9971595","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971595","url":null,"abstract":"In this research, we discuss and analyze the thermal insulation microstructure which appropriately reduce the thermal conductivity and form a local channel where the heat flow is concentrated. As the channel becomes smaller, the thermal resistance increases and the noise will also increase. For the Johnson noise, the bandwidth can be reduced through subsequent electronic circuit signal processing. Although the response speed is sacrificed, the overall thermal sensing signal is improved in practical applications without introducing additional noise.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"1 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89482596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Facial Expression Recognition Based on Snaking Data Access and Pipeline Convolution Neural Network 基于蛇形数据访问和管道卷积神经网络的面部表情识别
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971645
Chi-Chang Lin, Chia-Yu Hsieh, Ping-Cheng Wu, Ping-Chun Chen, You-Sheng Xiao, Yunqi Fan
{"title":"Facial Expression Recognition Based on Snaking Data Access and Pipeline Convolution Neural Network","authors":"Chi-Chang Lin, Chia-Yu Hsieh, Ping-Cheng Wu, Ping-Chun Chen, You-Sheng Xiao, Yunqi Fan","doi":"10.1109/IET-ICETA56553.2022.9971645","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971645","url":null,"abstract":"In this paper, we proposed facial expression recognition based on snaking data access and pipeline convolution neural network. This paper performs an expression recognition system composed of fast convolution operations. We use Winograd algorithm to reduce the number of multipliers and design data reuse, pipeline and Snaking data access structures to increase the performance of the chip. Therefore, the chip can perform high-speed computing and achieve a well facial expression recognition rate.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"36 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89952847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of p-GaN Gate HEMT using Removal Si Substrate and part of Buffer Layer 去除硅衬底和部分缓冲层制备p-GaN栅极HEMT的研究
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971618
Y. Lin, Y. Chiu, E. Chang
{"title":"Investigation of p-GaN Gate HEMT using Removal Si Substrate and part of Buffer Layer","authors":"Y. Lin, Y. Chiu, E. Chang","doi":"10.1109/IET-ICETA56553.2022.9971618","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971618","url":null,"abstract":"Normally-off p-GaN gate high electron mobility transistor (HEMT) on Si substrate using the back-side via process was investigated. We removed the Si substrate and part of the GaN carbon-doped layer. A 100 nm thickness of SiO2 layer is deposited on the back-side via to obstruct the buffer leakage, and a 1um thick gold is electroplated to improve the self-heating effect. With and without the backside via process, the threshold voltages are 0.92 and 1.45 V, the on/off drain current ratios are 5×1010 and 5×108, the subthreshold swings are 154 and 224 mV/dec, the static on-resistances are 24.77 and 27.55 Ω.mm, and the dynamic on-resistance ratios are 1.18 and 1.3.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"54 2 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89054197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IET-ICETA 2022 Cover Page IET-ICETA 2022封面页
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/iet-iceta56553.2022.9971701
{"title":"IET-ICETA 2022 Cover Page","authors":"","doi":"10.1109/iet-iceta56553.2022.9971701","DOIUrl":"https://doi.org/10.1109/iet-iceta56553.2022.9971701","url":null,"abstract":"","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"5 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89592927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide Range Output Voltage LLC Resonant Converter for Electric Vehicle Charging System 用于电动汽车充电系统的宽范围输出电压LLC谐振变换器
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971521
C. Chen, Yi-Feng Lin, Wei-Cheng Chen, Jing-Yuan Lin, H. Chiu
{"title":"Wide Range Output Voltage LLC Resonant Converter for Electric Vehicle Charging System","authors":"C. Chen, Yi-Feng Lin, Wei-Cheng Chen, Jing-Yuan Lin, H. Chiu","doi":"10.1109/IET-ICETA56553.2022.9971521","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971521","url":null,"abstract":"This paper presents the hybrid control of a fullbridge LLC series resonant converter as the application of an electric vehicle charging system. the hybrid control combines three control methods to achieve wide a output voltage range of about $75sim 475 V$, three control methods including the pulse-frequency control method, phase-shift control method, and burst mode. finally, a wide-range output voltage LLC resonant converter prototype is realized. The specification of the prototype is a DC input voltage of SOO V, an output voltage of 75-475V, and maximum output power of 7.5 kW. The peak efficiency is 97.2 %.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"24 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90733902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
COVID-19 Lung CT Images Recognition with Superscalar Winograd Circuit Based on VGG19 基于VGG19的标量Winograd电路的COVID-19肺部CT图像识别
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971486
Shao-Huai Wang, Pin-Chieh Hsieh, Tzu-Yao Su, Jhih-Yuan Gao, Min-Hua Lu, Yunqi Fan
{"title":"COVID-19 Lung CT Images Recognition with Superscalar Winograd Circuit Based on VGG19","authors":"Shao-Huai Wang, Pin-Chieh Hsieh, Tzu-Yao Su, Jhih-Yuan Gao, Min-Hua Lu, Yunqi Fan","doi":"10.1109/IET-ICETA56553.2022.9971486","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971486","url":null,"abstract":"In this paper, we proposed COVID-19 lung CT (computed tomography) images recognition with superscalar winograd circuit based on VGG19. We adopt the VGG-19 machine learning architecture to recognize lung CT images and speed up neural network operations through Superscalar Winograd Circuit. After a series of experiments, our proposed method has a high pneumonia recognition rate and high computational efficiency.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"63 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86867342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Evaluation of Cybersecurity Risks of DLMS/COSEM Smart Meter Using Fuzzing Testing 基于模糊测试的DLMS/COSEM智能电表网络安全风险评估
IF 1.4
IET Networks Pub Date : 2022-10-14 DOI: 10.1109/IET-ICETA56553.2022.9971577
Chien-Lung Wang, Jou-An Shih, I. Liao, Chun-Tsai Chien
{"title":"An Evaluation of Cybersecurity Risks of DLMS/COSEM Smart Meter Using Fuzzing Testing","authors":"Chien-Lung Wang, Jou-An Shih, I. Liao, Chun-Tsai Chien","doi":"10.1109/IET-ICETA56553.2022.9971577","DOIUrl":"https://doi.org/10.1109/IET-ICETA56553.2022.9971577","url":null,"abstract":"Since smart meters are IoT devices that can share energy usage information to users and third-party service providers, any vulnerability of smart meters that can be exploited by hackers is a threat to the reliability of smart grids. The purpose of this paper is to explore the possibilities of DoS attacks to smart meters. Our research focuses on the High-Level Data Link Control layer of DLMS/cosEM smart meters. The testing cases are generated by fuzzing testing methods according to the HDLC specifications. The CTT 3.1 is used as the client sending requests to the smart meter server. The responses of the server are then recorded and analyzed for potential vulnerabilities. The results show that the fuzzing test cases on the buffer overflow/underflow category generate most of the abnormal responses.","PeriodicalId":46240,"journal":{"name":"IET Networks","volume":"38 1","pages":"1-2"},"PeriodicalIF":1.4,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72673750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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