{"title":"Enhanced Thermoelectric and Mechanical Properties of ZrNiSn Half-Heusler Compounds by Excess Ag Doping at Ni Sites","authors":"Xinghui Wang, Yu Yan, Wen Zhang, Huijun Kang, Enyu Guo, Zongning Chen, Rongchun Chen, Tongmin Wang","doi":"10.1007/s40195-025-01853-x","DOIUrl":"10.1007/s40195-025-01853-x","url":null,"abstract":"<div><p>Different from full-Heusler compounds, four vacancies in the face-centered cubic crystal structure provide extra sites for enhancing the thermoelectric properties of half-Heusler compounds (HHs). Herein, excess Ag is introduced to the Ni-site vacancies of ZrNiSn to optimize thermoelectric properties. The ZrNiAg<sub><i>x</i></sub>Sn (<i>x</i> = 0, 0.01, 0.02, and 0.03) samples were synthesized by levitation melting and spark plasma sintering. Remarkably, the introduction of excess Ag significantly improves the Seebeck coefficient of ZrNiAg<sub>0.01</sub>Sn, and a peak power factor of ~ 4.52 mW/(m K<sup>2</sup>) is achieved in ZrNiAg<sub>0.01</sub>Sn at 923 K, which is enhanced by 22.8% than that of pristine ZrNiSn. As a result, the figure of merit <i>zT</i> of pristine ZrNiSn is enhanced from ~ 0.60 to ~ 0.72 of ZrNiAg<sub>0.01</sub>Sn at 923 K. Additionally, grain refinement effectively increases the Vickers hardness of ZrNiAg<sub>0.01</sub>Sn, which is enhanced by 32.8% than that of pristine ZrNiSn. These results demonstrate a viable doping strategy for designing ZrNiSn-based HHs with excellent thermoelectric and mechanical properties.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"763 - 771"},"PeriodicalIF":2.9,"publicationDate":"2025-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yaru Gong, Wei Dou, Yanan Li, Pan Ying, Guodong Tang
{"title":"A Review of Polycrystalline SnSe Thermoelectric Materials: Progress and Prospects","authors":"Yaru Gong, Wei Dou, Yanan Li, Pan Ying, Guodong Tang","doi":"10.1007/s40195-025-01860-y","DOIUrl":"10.1007/s40195-025-01860-y","url":null,"abstract":"<div><p>As functional materials capable of direct thermoelectric energy conversion, thermoelectric materials hold immense promise for waste heat recovery and sustainable energy utilization. Through development in recent decades, many thermoelectric material systems with excellent performance have been developed. In alignment with the principles of circular economy and sustainable development, the search for new and efficient thermoelectric materials has become one of the most important directions of current research. SnSe has received much attention as an environmentally friendly and cost-effective thermoelectric material system. In particular, polycrystalline SnSe, with the advantages of facile preparation and stable mechanical properties, is suitable for large-scale industrial production. Here, we summarize the common preparation methods of polycrystalline SnSe in the decade of melting, mechanical alloying, and liquid-phase methods, as well as the strategies of property optimization such as microstructure design, grain boundary engineering, and band engineering. Finally, we provide perspectives on future research directions for polycrystalline SnSe to further improve thermoelectric performance and accelerate its practical applications.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"733 - 753"},"PeriodicalIF":2.9,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Heterogeneous Interface Microstructure and Thermoelectromagnetic Conversion Performance of BiSbTe/MnCoGe Multifunctional Materials","authors":"Longli Wang, Rongcheng Li, Peilin Miao, Jiushun Zhu, Gangjian Tan, Xinfeng Tang","doi":"10.1007/s40195-025-01854-w","DOIUrl":"10.1007/s40195-025-01854-w","url":null,"abstract":"<div><p>The synergistic cooling of thermoelectromagnetic materials promises a breakthrough in the efficiency of single refrigeration and has attracted extensive research. The study of heterogeneous interface is crucial for achieving the synergistic performance of both materials. In this work, a composite material comprising Bi<sub>2</sub>Te<sub>3</sub>-based thermoelectric material and MnCoGe-based magnetocaloric material is synthesized, which is a material exhibiting both thermoelectric and magnetocaloric properties. During the plasma-activated sintering process of the composite material, elemental interdiffusion of Mn, Co, Sb, and Te occurs, forming a diffusion layer of MnTe and CoSbTe. Reaction of heterogeneous interface leads to point defects within the material, significantly increasing the carrier concentration. Optimization of the sintering temperature results in a thermoelectric figure of merit (<i>ZT</i>) of 0.69 at 300 K and −Δ<i>S</i><sub>max</sub> of 0.97 J kg<sup>−1</sup> K<sup>−1</sup> at room temperature under a 5 T magnetic field for the Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub>/10 wt% Mn<sub>0.9</sub>Cu<sub>0.1</sub>CoGe composite sintered at 623 K and under 50 MPa. This study demonstrates that Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub>/Mn<sub>0.9</sub>Cu<sub>0.1</sub>CoGe is a potential candidate for efficient thermoelectromagnetic cooling applications.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"839 - 848"},"PeriodicalIF":2.9,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Preface to the Special Issue: Thermoelectric Materials and Devices","authors":"Gangjian Tan","doi":"10.1007/s40195-025-01850-0","DOIUrl":"10.1007/s40195-025-01850-0","url":null,"abstract":"","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"705 - 706"},"PeriodicalIF":2.9,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Baocheng Yuan, Yi Wen, Lei Wang, Zhihao Li, Hong-Chao Wang, Cheng Chang, Li-Dong Zhao
{"title":"Impact of CuFeS2 on the Thermoelectric Performance of SnTe","authors":"Baocheng Yuan, Yi Wen, Lei Wang, Zhihao Li, Hong-Chao Wang, Cheng Chang, Li-Dong Zhao","doi":"10.1007/s40195-025-01831-3","DOIUrl":"10.1007/s40195-025-01831-3","url":null,"abstract":"<div><p>Thermoelectric materials possess tremendous potential in energy regeneration owing to their capacity to produce power directly from heat. SnTe, a lead-free compound, is a prospective thermoelectric material. However, because of its elevated thermal conductivity, the thermoelectric performance of undoped SnTe remains at a low level. In this work, we induce ternary compounds CuFeS<sub>2</sub> into the SnTe matrix by ball milling. We observe the decomposition of CuFeS<sub>2</sub>, which decomposes into FeS, Cu<sub>2</sub>S, and other binary compounds. These newly generated binary compounds form micropores and secondary phases in the matrix. Combined with the natural grain boundaries in the polycrystal, they form all-scale hierarchical structures within the material, resulting in reduced lattice thermal conductivity. Overall, the produced SnTe + 2 wt% CuFeS<sub>2</sub> composites show the peak dimensionless figure of merit (<i>ZT</i>) up to 0.33 at 673 K, an increase of ~ 100% compared to the undoped SnTe.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"803 - 810"},"PeriodicalIF":2.9,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Revealing the True Thermoelectric Properties of SnTe through Removing SnO2 Contamination","authors":"Yicheng Wang, Rongcheng Li, Bowen Jin, Chenghao Xie, Xinfeng Tang, Gangjian Tan","doi":"10.1007/s40195-025-01838-w","DOIUrl":"10.1007/s40195-025-01838-w","url":null,"abstract":"<div><p>Previous studies on SnTe have indicated that its low <i>ZT</i> value is associated with a high carrier concentration of up to 10<sup>20</sup>–10<sup>21</sup> cm<sup>−3</sup> and an excessively high lattice thermal conductivity. However, the high carrier concentration and lattice thermal conductivity observed in SnTe are not solely attributable to the presence of numerous intrinsic tin vacancies and a simple crystal structure. Additionally, the oxides formed through the oxidation of Sn and SnTe exert a partial influence on these properties. In this study, by pretreating the raw Sn material and isolating it from oxygen during preparation, we achieve a significant improvement in the thermoelectric performance of binary SnTe at high temperatures, with a peak <i>ZT</i> of approximately 0.83 at 800 K. This approach effectively reduces the content of SnO<sub>2</sub> in the matrix, enhancing the electrical and thermal transport properties of the samples. Specifically, the high-thermal conductivity of SnO<sub>2</sub> facilitates the formation of channels at grain boundaries that are more conducive to heat transfer, while its poor electrical conductivity and Seebeck coefficient diminish the intrinsic electrical transport behavior of SnTe. The removal of SnO<sub>2</sub> reflects the true thermoelectric performance of SnTe, making the samples prepared by this method stand out compared to other reported binary SnTe materials.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"754 - 762"},"PeriodicalIF":2.9,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yao Zhang, Hongtao Wang, Zhongtao Lu, Zifeng Li, Pengfei Wen, Xiaobin Feng, Guodong Li, Bo Duan, Pengcheng Zhai
{"title":"Effect of Ag Vacancies on the Mechanical Properties of Ag2S Thermoelectric Semiconductor","authors":"Yao Zhang, Hongtao Wang, Zhongtao Lu, Zifeng Li, Pengfei Wen, Xiaobin Feng, Guodong Li, Bo Duan, Pengcheng Zhai","doi":"10.1007/s40195-025-01836-y","DOIUrl":"10.1007/s40195-025-01836-y","url":null,"abstract":"<div><p>Ag vacancies have been shown to regulate the thermoelectric properties of Ag<sub>2</sub>S. However, their effect on the mechanical properties of Ag<sub>2</sub>S remains unclear. In this study, Ag<sub>2</sub>S-based samples with various Ag vacancy concentration were prepared, and their mechanical properties were investigated experimentally and theoretically. Both the bending strength and fracture strain decrease with increasing Ag vacancy concentration. Moreover, the dimple size on the fracture surfaces of the samples gradually reduces with increasing Ag vacancy concentration, further confirming the reduction in material ductility. Density functional theory results reveal that Ag vacancies lead to the disruption of Ag–S bonds in Ag<sub>2</sub>S at low ultimate strains, consequently causing a simultaneous reduction in both strength and deformability, which agrees reasonably well with the experimental observations. This work provides new insights into the effect of vacancies on the mechanical properties of Ag<sub>2</sub>S materials, which could guide the design of fast ionic thermoelectric materials.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"869 - 875"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mi Qin, Bingqing Cao, Pan Zhang, Xuemei Zhang, Ziqi Han, Xiaohong Zheng, Xianlong Wang, Xin Chen, Yongsheng Zhang
{"title":"Point Defects and Grain Boundaries Effects on Electrical Transports of PbTe Using the Non-equilibrium Green’s Function","authors":"Mi Qin, Bingqing Cao, Pan Zhang, Xuemei Zhang, Ziqi Han, Xiaohong Zheng, Xianlong Wang, Xin Chen, Yongsheng Zhang","doi":"10.1007/s40195-025-01834-0","DOIUrl":"10.1007/s40195-025-01834-0","url":null,"abstract":"<div><p>Defect engineering is a commonly methodology used to enhance the thermoelectric performance of thermoelectric PbTe by improving its electronic transport properties. At the nanoscale, defects can induce quantum tunneling effects that significantly impact the electrical properties of materials. To understand the specific mechanisms underlying the quantum transport properties of PbTe, we employ the non-equilibrium Green's function (NEGF) method to investigate the effects of intrinsic defects (point defects and grain boundaries) on the electronic transport properties of PbTe-based nanodevices from a quantum mechanical perspective. Our results show that the Pb vacancy (<i>V</i><sub>Pb</sub>) has the highest conduction. The conduction depends on the defect type, chemical potential and bias voltage. The presence of intrinsic point defects introduces impurity levels, facilitating the electron tunneling and leading to an increase in the transmission coefficient, thereby enhancing the electronic transport properties. For PbTe containing grain boundaries, these boundaries suppress the electronic transport properties. The Te occupied twin boundary (Te-TB) exerts a stronger inhibitory effect than the Pb occupied twin boundary (Pb-TB). Nevertheless, the combined effect between twin boundaries and point defects can enhance the electrical properties. Therefore, in order to obtain highly conductive of PbTe materials, a Te-rich synthesis environment should be used to promote the effective formation of Pb vacancy. Our work offers a comprehensive understanding of the impact of defects on electron scattering in thermoelectric materials.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"811 - 822"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chengwei Sun, Wang Li, Chengjun Li, Yingchao Wei, Wenyuan Ma, Xin Li, Qinghui Jiang, Yubo Luo, Junyou Yang
{"title":"Thermoelectric Performance of CuInSe2-ZnSe Solid Solution","authors":"Chengwei Sun, Wang Li, Chengjun Li, Yingchao Wei, Wenyuan Ma, Xin Li, Qinghui Jiang, Yubo Luo, Junyou Yang","doi":"10.1007/s40195-025-01839-9","DOIUrl":"10.1007/s40195-025-01839-9","url":null,"abstract":"<div><p>CuInSe<sub>2</sub> is an N-type diamond-like semiconductors thermoelectric candidate for power generation at medium temperature with its environmentally friendly and cost-effective properties. However, the intrinsic high thermal conductivity of CuInSe<sub>2</sub> limits the enhancement of its thermoelectric performance. Herein, we investigate the thermoelectric performance of N-type CuInSe<sub>2</sub> materials by incorporating ZnSe through a solid solution strategy. A series of (CuInSe<sub>2</sub>)<sub>1-<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> (<i>x</i> = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) samples were synthesized, forming continuous solid solutions, while introducing minor porosity. ZnSe solid solution effectively reduces the lattice thermal conductivity of the CuInSe<sub>2</sub> matrix at near-room temperatures, but has a weaker effect at higher temperatures. Due to the intrinsic low carrier concentration of the system, resulting in high resistivity, the maximum figure of merit (<i>ZT</i>) of (CuInSe<sub>2</sub>)<sub>0.8</sub>(ZnSe)<sub>0.2</sub> reaches 0.08 at 773 K. Despite the relatively low <i>ZT</i>, the solid solution strategy proves effective in reducing the lattice thermal conductivity near-room temperature and offers potential for cost-effective thermoelectric materials.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"823 - 830"},"PeriodicalIF":2.9,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of Carbon Nanotubes on the Thermoelectric and Mechanical Properties of Cu2.1Mn0.9SnSe4 Alloy","authors":"Yuqing Sun, Fulong Liu, Zhihao Li, Panpan Peng, Yujie Zong, Peng Cao, Chunlei Wang, Hongchao Wang","doi":"10.1007/s40195-025-01833-1","DOIUrl":"10.1007/s40195-025-01833-1","url":null,"abstract":"<div><p>Quaternary chalcogenides are viewed as a class of potential thermoelectric materials due to their good thermoelectric performance in the medium temperature region. In this work, carbon nanotubes (CNTs) with varying weight percentages are composited into the quaternary chalcogenide Cu<sub>2.1</sub>Mn<sub>0.9</sub>SnSe<sub>4</sub> (CMTS) using a technique that combines ball-milling and hot-pressing, and the effect of CNTs on the thermoelectric performance of CMTS is investigated. The compositing of CNTs results in an increase in the intrinsic defects of CMTS, thereby enhancing the electrical conductivities of the composited samples. Besides, the addition of CNTs introduces various phonon scattering mechanisms, effectively restraining the lattice thermal conductivities of the composited samples, particularly in the low to medium temperature range. Ultimately, owing to the concurrent optimization of the power factor and thermal conductivity, the <i>x</i> = 0.25 sample achieves a <i>zT</i> value of 0.37 at 673 K. The compositing of highly conductive secondary phase is recognized as a viable approach for the simultaneous enhancement of the thermoelectric properties of materials.</p></div>","PeriodicalId":457,"journal":{"name":"Acta Metallurgica Sinica-English Letters","volume":"38 5","pages":"831 - 838"},"PeriodicalIF":2.9,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}