Optoelectronics Instrumentation and Data Processing最新文献_第8页

Real-Time Spline Adaptive Filter: Design and Efficiency Analysis 实时样条自适应滤波器：设计与效率分析

IF 0.4

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-12-10 DOI: 10.3103/s875669902305014x

E. A. Kochegurova, Yu. A. Martynova

引用次数: 0

Raman Scattering of Light in Thin Films of Fe, Cr, and Ca Silicides on Silicon and Sapphire 硅和蓝宝石上铁、铬和钙硅化物薄膜中的光拉曼散射

IF 0.4

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-12-01 DOI: 10.3103/s8756699023060031

{"title":"Raman Scattering of Light in Thin Films of Fe, Cr, and Ca Silicides on Silicon and Sapphire","authors":"","doi":"10.3103/s8756699023060031","DOIUrl":"https://doi.org/10.3103/s8756699023060031","url":null,"abstract":" <h3>Abstract</h3> Epitaxial and polycrystalline films of iron (Fe), chromium (Cr), and calcium (Ca) silicides of various thicknesses (from 3.2 to 380 nm) were grown on silicon and sapphire substrates in ultrahigh vacuum by three methods (solid-phase epitaxy, reactive epitaxy and molecular beam epitaxy). The crystal structure and matching with the silicon lattice were determined for them using the X-ray diffraction method. A comparative analysis of Raman scattering spectra and far-IR spectroscopy spectra showed that films of semiconductor silicides have the strongest Raman peaks, and the detected shifts in their positions are caused by distortions in the silicide lattices. It has been established that in films of iron and chromium monosilicides at a fixed laser excitation wavelength ( (lambda=628.3) nm) and a power of 3.4 mW, the strength of the Raman peaks decreases with decreasing film thickness and they disappear completely at a thickness below 10 nm. Chromium trisilicide films were grown on single-crystal sapphire, which made it possible for the first time to detect for it active Raman phonons at (lambda=488) nm and a power of 0.42 mW at wave numbers 214.3 and 273.1 cm ({}^{-1}) . The studied films of transition metal monosilicides are of significant interest from the perspective of their possible use as materials for thermoelectronics and spintronics, and systematized information on active Raman phonons and IR active phonons will make it possible to quickly determine the type of phase formed immediately after film growth. ","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"183 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140300376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Degradation of the Properties of SOS Ferroelectric Pseudo-MOS Transistors after Irradiation with Fast Heavy Xe and Bi Ions 快速重氙和重铋离子辐照后 SOS 铁电伪 MOS 晶体管性能的退化

IF 0.4

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-12-01 DOI: 10.3103/s8756699023060122

{"title":"Degradation of the Properties of SOS Ferroelectric Pseudo-MOS Transistors after Irradiation with Fast Heavy Xe and Bi Ions","authors":"","doi":"10.3103/s8756699023060122","DOIUrl":"https://doi.org/10.3103/s8756699023060122","url":null,"abstract":" <h3>Abstract</h3> The results are presented on changes in the parameters of pseudo-MOS transistors based on silicon-on-sapphire (SOS) mesastructures upon irradiation with swift heavy ions (SHIs) of Xe ({}^{+26}) (150 MeV) and Bi ({}^{+51}) (670 MeV) to a fluence of (2,times,10^{11}) cm ({}^{-2}) , indicating the accumulation of mechanical stresses and charges in the intermediate ferroelectric (Fe) layers of HfO ({}_{2}) films (HO) with a thickness of 20 nm and Hf ({}_{0.5}) Zr ({}_{0.5}) O ({}_{2}) (HZO) laminated with inserts of Al ({}_{2}) O ({}_{3}) monolayers (HA, HZA) or without them. SOS heterostructures are formed by direct bonding and hydrogen transfer of a silicon film (500 nm) with HA and HZA nanolayers pre-applied by plasma-stimulated atomic layer deposition onto sapphire. Electrophysical parameters are determined from the drain current—gate voltage characteristics ( (I_{textrm{ds}}) – (V_{textrm{g}})) of pseudo-MOS transistors with tungsten drain/source electrodes (100 nm) deposited by magnetron sputtering on SOS mesastructures through a lithographic mask. Comparison of the characteristics with Raman scattering analysis showed the correspondence of the mechanical compressive stresses introduced by SHI irradiation in silicon with the ratios of the Xe and Bi track volumes in the HA ferroelectric and sapphire. ","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"36 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140300272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparison of Methods for Testing the Hypothesis of Independence of Random Variables Based on a Nonparametric Classifier and Pearson’s Chi-Squared Test 基于非参数分类器和皮尔逊方差检验的随机变量独立性假设检验方法比较

IF 0.4

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-10-01 DOI: 10.3103/s8756699023050047

{"title":"Comparison of Methods for Testing the Hypothesis of Independence of Random Variables Based on a Nonparametric Classifier and Pearson’s Chi-Squared Test","authors":"","doi":"10.3103/s8756699023050047","DOIUrl":"https://doi.org/10.3103/s8756699023050047","url":null,"abstract":" <h3>Abstract</h3> A technique for testing the hypothesis about the independence of random variables, based on a nonparametric pattern recognition algorithm, is used in the analysis of ambiguous dependencies. The pattern recognition algorithm meets the maximum likelihood criterion. The assessment of distribution laws in classes is carried out using initial statistical data under the assumption of independence and dependence of the random variables being compared. To estimate probability densities in classes, nonparametric Rosenblatt–Parzen statistics are used. The blurring coefficients of kernel functions in nonparametric estimates of probability densities in classes are determined from the condition of the minimum of their standard deviations. Under these conditions, estimates of the probabilities of pattern recognition errors in classes are calculated. Based on their minimum value, a decision is made on the independence or dependence of random variables. The hypothesis about a significant difference in the probabilities of pattern recognition errors in classes is tested. The use of the proposed technique allows us to bypass the problem of decomposing the range of values of random variables into intervals, which is characteristic of the Pearson criterion. The effectiveness of the proposed method is compared with the Pearson criterion. The results of computational experiments using the studied criteria in the analysis of ambiguous dependencies between random variables are presented. ","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"31 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140072459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Principal Components Analysis for Processing Multiparameter Acoustic Signals of the Mirror-Shadow Technique for Bar Stock Control 主成分分析法处理用于酒吧库存控制的镜影技术多参数声学信号

IF 0.4

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-10-01 DOI: 10.3103/s8756699023050072

引用次数: 0

Methods for the Formation of Spatiotemporal Clusters of Objects in an Unfriendly Environment 在不友好环境中形成时空物体集群的方法

IF 0.4

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-08-01 DOI: 10.3103/s8756699023040015

{"title":"Methods for the Formation of Spatiotemporal Clusters of Objects in an Unfriendly Environment","authors":"","doi":"10.3103/s8756699023040015","DOIUrl":"https://doi.org/10.3103/s8756699023040015","url":null,"abstract":" <h3>Abstract</h3> The conflict situation associated with the motion of clusters incorporating several hundreds of small-size control objects in the responsibility field of the radar station of an external observer is considered. The task of an external observer is to trace and follow the motion of a cluster and, in the case of hostile situation, act on it. The task of the cluster is to create a maximum uncertainty of decision making by the external observer. The cluster motion model is developed as a Reynolds swarm behavior model complemented with special coefficients. Three methods for the formation of different clusters close to geometric structures transformed in the process of motion are developed. The hypothesis that it is potentially possible to create the situations when a swarm will be perceived by an external observer as an integer large object rather than the original one by varying the geometry, shape, and number of objects in a swarm cluster is formulated and confirmed by mathematical modelling. It is shown that the clusters simulating hostile objects can be created if the decision making criterion is the effective dispersion area. ","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"166 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139459938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polynomial Design of Low-Order Controllers for SISO DAE Systems SISO DAE系统低阶控制器的多项式设计

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-06-01 DOI: 10.3103/s8756699023030056

A. V. Chekhonadskikh

引用次数: 0

On Possibility of Complete Suppression of the Instrumental Error Component from Inaccuracy of a Diffraction Grating 衍射光栅误差完全抑制仪器误差分量的可能性

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-06-01 DOI: 10.3103/s8756699023030093

V. P. Kir’yanov, A. V. Kir’yanov

引用次数: 0

Experimental Validation of the Theoretical Provision of Circular Aperture Synthesis 圆孔径合成理论提供的实验验证

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-06-01 DOI: 10.3103/s8756699023030135

V. P. Yushchenko, S. A. Litvinenko, O. V. Gofman, T. V. Duluba

引用次数: 0

Numerical and Experimental Investigations of the Photothermal Effect in Thin Films of Molybdenum Oxide under Laser Ablation 激光烧蚀下氧化钼薄膜光热效应的数值与实验研究

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-06-01 DOI: 10.3103/s8756699023030111

S. D. Poletaev

引用次数: 0