Degradation of the Properties of SOS Ferroelectric Pseudo-MOS Transistors after Irradiation with Fast Heavy Xe and Bi Ions

Abstract

The results are presented on changes in the parameters of pseudo-MOS transistors based on silicon-on-sapphire (SOS) mesastructures upon irradiation with swift heavy ions (SHIs) of Xe \({}^{+26}\) (150 MeV) and Bi \({}^{+51}\) (670 MeV) to a fluence of \(2\,\times\,10^{11}\) cm \({}^{-2}\) , indicating the accumulation of mechanical stresses and charges in the intermediate ferroelectric (Fe) layers of HfO \({}_{2}\) films (HO) with a thickness of 20 nm and Hf \({}_{0.5}\) Zr \({}_{0.5}\) O \({}_{2}\) (HZO) laminated with inserts of Al \({}_{2}\) O \({}_{3}\) monolayers (HA, HZA) or without them. SOS heterostructures are formed by direct bonding and hydrogen transfer of a silicon film (500 nm) with HA and HZA nanolayers pre-applied by plasma-stimulated atomic layer deposition onto sapphire. Electrophysical parameters are determined from the drain current—gate voltage characteristics ( \(I_{\textrm{ds}}\) – \(V_{\textrm{g}})\) of pseudo-MOS transistors with tungsten drain/source electrodes (100 nm) deposited by magnetron sputtering on SOS mesastructures through a lithographic mask. Comparison of the characteristics with Raman scattering analysis showed the correspondence of the mechanical compressive stresses introduced by SHI irradiation in silicon with the ratios of the Xe and Bi track volumes in the HA ferroelectric and sapphire.