Degradation of the Properties of SOS Ferroelectric Pseudo-MOS Transistors after Irradiation with Fast Heavy Xe and Bi Ions

IF 0.5 Q4 PHYSICS, MULTIDISCIPLINARY

Optoelectronics Instrumentation and Data Processing Pub Date : 2023-12-01 DOI:10.3103/s8756699023060122

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引用次数: 0

Abstract

The results are presented on changes in the parameters of pseudo-MOS transistors based on silicon-on-sapphire (SOS) mesastructures upon irradiation with swift heavy ions (SHIs) of Xe \({}^{+26}\) (150 MeV) and Bi \({}^{+51}\) (670 MeV) to a fluence of \(2\,\times\,10^{11}\) cm \({}^{-2}\) , indicating the accumulation of mechanical stresses and charges in the intermediate ferroelectric (Fe) layers of HfO \({}_{2}\) films (HO) with a thickness of 20 nm and Hf \({}_{0.5}\) Zr \({}_{0.5}\) O \({}_{2}\) (HZO) laminated with inserts of Al \({}_{2}\) O \({}_{3}\) monolayers (HA, HZA) or without them. SOS heterostructures are formed by direct bonding and hydrogen transfer of a silicon film (500 nm) with HA and HZA nanolayers pre-applied by plasma-stimulated atomic layer deposition onto sapphire. Electrophysical parameters are determined from the drain current—gate voltage characteristics ( \(I_{\textrm{ds}}\) – \(V_{\textrm{g}})\) of pseudo-MOS transistors with tungsten drain/source electrodes (100 nm) deposited by magnetron sputtering on SOS mesastructures through a lithographic mask. Comparison of the characteristics with Raman scattering analysis showed the correspondence of the mechanical compressive stresses introduced by SHI irradiation in silicon with the ratios of the Xe and Bi track volumes in the HA ferroelectric and sapphire.

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快速重氙和重铋离子辐照后 SOS 铁电伪 MOS 晶体管性能的退化

摘要本文介绍了基于蓝宝石硅（SOS）介质结构的伪MOS晶体管在Xe （{}^{+26}）（150MeV）和Bi （{}^{+51}）（670MeV）的迅猛重离子（SHIs）辐照下参数的变化，辐照流量为（2、\cm （{}^{-2}），表明在厚度为 20 nm 的 HfO （{}_{2}）薄膜（HO）和 Hf （{}_{0.5}）Zr （{}_{0.5}）O （{}_{2}）（HZO）层压，并插入 Al （{}_{2}）O （{}_{3}）单层（HA、HZA）或不插入它们。SOS 异质结构是通过等离子体刺激原子层沉积在蓝宝石上，将预先涂有 HA 和 HZA 纳米层的硅薄膜（500 nm）直接键合和氢转移形成的。电物理参数是根据通过光刻掩模磁控溅射沉积在 SOS 介面结构上的钨漏极/源极（100 nm）伪 MOS 晶体管的漏极电流-栅极电压特性（\(I_\textrm{ds}}\）-\(V_\textrm{g}}）确定的。将这些特性与拉曼散射分析进行比较后发现，SHI 照射在硅中引入的机械压缩应力与 HA 铁电体和蓝宝石中 Xe 和 Bi 磁道体积的比率是一致的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optoelectronics Instrumentation and Data Processing PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

期刊介绍： The scope of Optoelectronics, Instrumentation and Data Processing encompasses, but is not restricted to, the following areas: analysis and synthesis of signals and images; artificial intelligence methods; automated measurement systems; physicotechnical foundations of micro- and optoelectronics; optical information technologies; systems and components; modelling in physicotechnical research; laser physics applications; computer networks and data transmission systems. The journal publishes original papers, reviews, and short communications in order to provide the widest possible coverage of latest research and development in its chosen field.