Optoelectronics Instrumentation and Data Processing最新文献_第2页

Homogeneous Array of Nanopits on the Surface of InAlAs Layers Grown by Molecular Beam Epitaxy on an InP (001) Substrate 在 InP (001) 基底上通过分子束外延生长的 InAlAs 层表面上的均匀纳米凹坑阵列

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-07-29 DOI: 10.3103/s8756699024700250

D. V. Gulyaev, D. V. Dmitriev, A. I. Toropov, S. A. Ponomarev, K. S. Zhuravlev

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Shape Modification of Vertical Nanowires under Annealing 退火条件下垂直纳米线的形状改变

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-07-29 DOI: 10.3103/s8756699024700262

A. G. Nastovjak, N. L. Shwartz

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AFM Visualization of Conductivity and Morphology of BC $${}_{boldsymbol{x}}$$ -Film Surface Obtained by SLD Method 用 SLD 方法获得的 BC $${}_{boldsymbol{x}}$ 薄膜表面电导率和形态的原子力显微镜可视化分析

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-07-29 DOI: 10.3103/s8756699024700298

P. V. Zinin, A. A. Bykov, R. I. Romanov, A. A. Korneeva, A. V. Andreev, A. Yu. Belykh, S. Yu. Krasnoborod’ko, V. A. Kukushkin

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On a Method of Controlling Heater by Using Neural Networks 论利用神经网络控制加热器的方法

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-07-29 DOI: 10.3103/s8756699024700328

S. S. Abdurakipov, E. B. Butakov

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Resolution Enhancement in Optical Microscopy Using Subpixel Shifts 利用子像素移动提高光学显微镜分辨率

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-06-20 DOI: 10.3103/s8756699024700122

V. I. Guzhov, S. P. Il’inykh, E. V. Andryushchenko, D. S. Khaidukov

{"title":"Resolution Enhancement in Optical Microscopy Using Subpixel Shifts","authors":"V. I. Guzhov, S. P. Il’inykh, E. V. Andryushchenko, D. S. Khaidukov","doi":"10.3103/s8756699024700122","DOIUrl":"https://doi.org/10.3103/s8756699024700122","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>A new method of resolution enhancement in optical microscopy using the method of spatial subpixel shifts, i.e., shifts by some amount less than the resolution provided by the lens are considered. The resolution of optical microscopes is determined by the type of used lenses. Professional microscopes have a set of microlenses with different magnifications, which are mounted on turrets containing several lenses. Sometimes, it makes more sense to use one lens instead of a set of microlenses if it is possible to provide subpixel shifts. An increase in spatial resolution is carried out using the subpixel shift technique. In this case, the spectrum of the feature is supplemented by a multiplier, the type of which depends on the type of lens aperture. To obtain high-resolution features, it is necessary to divide the Fourier spectrum of an image obtained from several subpixel-shifted images by a factor depending on the selected aperture. This factor is called the aperture function. The aperture function is determined by the type of used lens and can be its nameplate value. An experimental method for calibrating a lens (obtaining its aperture function) with low resolution ((8times)) based on images obtained with higher resolution lenses ((40times)) is shown. Once the aperture function is defined, one low-resolution lens can be used to produce images at any resolution less than the resolution of the selected high-resolution lens ((40times)).","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"28 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Effect of Multiplicative Noises on the Precision of Measuring the Frequency of a Coherent Signal against the Background of White Noise 乘法噪声对在白噪声背景下测量相干信号频率精度的影响

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-06-20 DOI: 10.3103/s8756699024700092

V. M. Artyushenko, V. I. Volovach

{"title":"Effect of Multiplicative Noises on the Precision of Measuring the Frequency of a Coherent Signal against the Background of White Noise","authors":"V. M. Artyushenko, V. I. Volovach","doi":"10.3103/s8756699024700092","DOIUrl":"https://doi.org/10.3103/s8756699024700092","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>The effect of multiplicative noises acting simultaneously with white noise on the precision of measuring the frequency of a coherent signal specified as a sequence of coherent pulses is considered and analyzed. The condition for the absence of systematic errors at the output of a tracking meter is determined. The slope of its discrimination characteristic, the spectral density of fluctuations at the output from the discriminator, and the coefficients, which characterize the normalizing effect of automatic gain control (AGC), are found. The mentioned parameters specify the value of worsening in the meter precision characteristics under the influence of multiplicative noises. It is shown that the effect of multiplicative noises grows with a decrease in the undistorted signal part level and an increase in the ratio between the energy of a signal, which is coherently accumulated in linear discriminator circuits, to the spectral additive noise power density. It is demonstrated that the effect of multiplicative noises is most pronounced in the cases when the noise modulation function spectrum has a width comparable with the bandwidth of linear discriminator circuits.","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"6 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141530332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Modeling of Lasers Based on the Stimulated Raman Scattering Effect in Special Tellurite Fibers and Microresonators 基于特殊碲纤维和微谐振器中受激拉曼散射效应的激光器建模

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-06-20 DOI: 10.3103/s875669902470002x

E. A. Anashkina, A. V. Andrianov

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Design Study High Reflectors Graded Index Mirror Dispersive Properties 设计研究高分辨率反射镜的色散特性

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-06-20 DOI: 10.3103/s8756699024700158

Elham Jasim Mohammad

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Machine Learning Methods for Compensating Signal Distortions in Fiber-Optic Communication Lines 补偿光纤通信线路信号失真的机器学习方法

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-06-20 DOI: 10.3103/s8756699024700018

O. S. Sidelnikov, A. A. Redyuk, M. P. Fedoruk

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Visible Photoluminescence of SiO $${}_{mathbf{2}}$$ Films Implanted with In $${}^{mathbf{+}}$$ and As $${}^{mathbf{+}}$$ Ions 植入 In $${}^{mathbf{+}$ 和 As $${}^{mathbf{+}$ 离子的 SiO $${}_{mathbf{2}}$ 薄膜的可见光发光

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Optoelectronics Instrumentation and Data Processing Pub Date : 2024-06-20 DOI: 10.3103/s8756699024700067

I. E. Tyschenko, Zh. Si, S. G. Cherkova, V. P. Popov

{"title":"Visible Photoluminescence of SiO $${}_{mathbf{2}}$$ Films Implanted with In $${}^{mathbf{+}}$$ and As $${}^{mathbf{+}}$$ Ions","authors":"I. E. Tyschenko, Zh. Si, S. G. Cherkova, V. P. Popov","doi":"10.3103/s8756699024700067","DOIUrl":"https://doi.org/10.3103/s8756699024700067","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>Visible photoluminescence from SiO({}_{2}) films implanted with In({}^{+}) and As({}^{+}) ions was studied at room temperature depending on the energy of As({}^{+}) ions, the temperature of further annealing, and the exciting radiation wavelength. As({}^{+}) ions with energies of 40, 80, or 135 keV and In({}^{+}) ions with an energy of 50 keV, at which the ratio between the average projective ranges of ions (textrm{R}_{p}^{textrm{As}}/textrm{R}_{p}^{textrm{In}}) was 1, 2, and 3, respectively, were selected. Further annealing was performed at a temperature of 900 and 1100({}^{circ})C. Photoluminescence spectra were excited with laser radiation with wavelengths (lambda_{ex}=442) and 473 nm. The spectra of photoluminescence under excitation with (lambda_{textrm{ex}}=473) nm had a peak at 550 nm, whose energy position was shifted to (520{-}530) nm at (lambda_{ex}=442) nm. An increase in the ratio (textrm{R}_{p}^{textrm{As}}/textrm{R}_{p}^{textrm{In}}) was accompanied by a decrease in the photoluminescence intensity and a change in the ratio between the intensities of peaks depending on the annealing temperature. The observed effect was discussed from the viewpoint of recombination between electrons and holes in InAs nanocrystals.","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"22 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141511468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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