退火条件下垂直纳米线的形状改变

IF 0.5 Q4 PHYSICS, MULTIDISCIPLINARY

Optoelectronics Instrumentation and Data Processing Pub Date : 2024-07-29 DOI:10.3103/s8756699024700262

A. G. Nastovjak, N. L. Shwartz

{"title":"退火条件下垂直纳米线的形状改变","authors":"A. G. Nastovjak, N. L. Shwartz","doi":"10.3103/s8756699024700262","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The numerical calculation of the shape modification of vertical nanowires under annealing due to the readsorption of the substance evaporated from the neighboring nanowires and substrate was carried out. The calculation was performed by the model of evaporation from a set of spherically symmetric sources and by the Knudsen–Lambert model. The effect produced on the shape of nanowires by the aspect ratio of the nanowire length to the distance between them and the rate of material evaporation from the nanowire side wall and substrate was analyzed.</p>","PeriodicalId":44919,"journal":{"name":"Optoelectronics Instrumentation and Data Processing","volume":"11 1","pages":""},"PeriodicalIF":0.5000,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Shape Modification of Vertical Nanowires under Annealing\",\"authors\":\"A. G. Nastovjak, N. L. Shwartz\",\"doi\":\"10.3103/s8756699024700262\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The numerical calculation of the shape modification of vertical nanowires under annealing due to the readsorption of the substance evaporated from the neighboring nanowires and substrate was carried out. The calculation was performed by the model of evaporation from a set of spherically symmetric sources and by the Knudsen–Lambert model. The effect produced on the shape of nanowires by the aspect ratio of the nanowire length to the distance between them and the rate of material evaporation from the nanowire side wall and substrate was analyzed.</p>\",\"PeriodicalId\":44919,\"journal\":{\"name\":\"Optoelectronics Instrumentation and Data Processing\",\"volume\":\"11 1\",\"pages\":\"\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2024-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optoelectronics Instrumentation and Data Processing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3103/s8756699024700262\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optoelectronics Instrumentation and Data Processing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3103/s8756699024700262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

摘要对垂直纳米线在退火过程中由于从邻近纳米线和基底蒸发的物质的再吸收而导致的形状改变进行了数值计算。计算是通过一组球面对称源的蒸发模型和克努森-朗伯模型进行的。分析了纳米线长度与纳米线之间距离的长宽比对纳米线形状的影响，以及从纳米线侧壁和基底蒸发物质的速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Shape Modification of Vertical Nanowires under Annealing

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Shape Modification of Vertical Nanowires under Annealing

Abstract

The numerical calculation of the shape modification of vertical nanowires under annealing due to the readsorption of the substance evaporated from the neighboring nanowires and substrate was carried out. The calculation was performed by the model of evaporation from a set of spherically symmetric sources and by the Knudsen–Lambert model. The effect produced on the shape of nanowires by the aspect ratio of the nanowire length to the distance between them and the rate of material evaporation from the nanowire side wall and substrate was analyzed.

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来源期刊

Optoelectronics Instrumentation and Data Processing PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

期刊介绍： The scope of Optoelectronics, Instrumentation and Data Processing encompasses, but is not restricted to, the following areas: analysis and synthesis of signals and images; artificial intelligence methods; automated measurement systems; physicotechnical foundations of micro- and optoelectronics; optical information technologies; systems and components; modelling in physicotechnical research; laser physics applications; computer networks and data transmission systems. The journal publishes original papers, reviews, and short communications in order to provide the widest possible coverage of latest research and development in its chosen field.