在 InP (001) 基底上通过分子束外延生长的 InAlAs 层表面上的均匀纳米凹坑阵列

IF 0.5 Q4 PHYSICS, MULTIDISCIPLINARY

Optoelectronics Instrumentation and Data Processing Pub Date : 2024-07-29 DOI:10.3103/s8756699024700250

D. V. Gulyaev, D. V. Dmitriev, A. I. Toropov, S. A. Ponomarev, K. S. Zhuravlev

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引用次数: 0

摘要

摘要本文研究了偏离与 InP 衬底晶格匹配成分的 InAlAs 层的表面形态。研究证明了在 InAlAs 层表面形成大小和形状一致的纳米凹坑阵列的可能性。InAlAs 层表面凹坑的大小与厚度之间存在线性关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Homogeneous Array of Nanopits on the Surface of InAlAs Layers Grown by Molecular Beam Epitaxy on an InP (001) Substrate

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Homogeneous Array of Nanopits on the Surface of InAlAs Layers Grown by Molecular Beam Epitaxy on an InP (001) Substrate

Abstract

In this paper, the surface morphology of InAlAs layers deviating from the lattice-matched composition with an InP substrate is studied. The possibility of forming an array of nanopits uniform in size and shape on the surface of the InAlAs layer is demonstrated. A linear relationship between the size of pits on the surface of a InAlAs layer and its thickness is shown.

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来源期刊

Optoelectronics Instrumentation and Data Processing PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

期刊介绍： The scope of Optoelectronics, Instrumentation and Data Processing encompasses, but is not restricted to, the following areas: analysis and synthesis of signals and images; artificial intelligence methods; automated measurement systems; physicotechnical foundations of micro- and optoelectronics; optical information technologies; systems and components; modelling in physicotechnical research; laser physics applications; computer networks and data transmission systems. The journal publishes original papers, reviews, and short communications in order to provide the widest possible coverage of latest research and development in its chosen field.