Visible Photoluminescence of SiO $${}_{\mathbf{2}}$$ Films Implanted with In $${}^{\mathbf{+}}$$ and As $${}^{\mathbf{+}}$$ Ions

IF 0.5 Q4 PHYSICS, MULTIDISCIPLINARY

Optoelectronics Instrumentation and Data Processing Pub Date : 2024-06-20 DOI:10.3103/s8756699024700067

I. E. Tyschenko, Zh. Si, S. G. Cherkova, V. P. Popov

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Abstract

Visible photoluminescence from SiO${}_{2}$ films implanted with In${}^{+}$ and As${}^{+}$ ions was studied at room temperature depending on the energy of As${}^{+}$ ions, the temperature of further annealing, and the exciting radiation wavelength. As${}^{+}$ ions with energies of 40, 80, or 135 keV and In${}^{+}$ ions with an energy of 50 keV, at which the ratio between the average projective ranges of ions $\textrm{R}_{p}^{\textrm{As}}/\textrm{R}_{p}^{\textrm{In}}$ was 1, 2, and 3, respectively, were selected. Further annealing was performed at a temperature of 900 and 1100${}^{\circ}$C. Photoluminescence spectra were excited with laser radiation with wavelengths $\lambda_{ex}=442$ and 473 nm. The spectra of photoluminescence under excitation with $\lambda_{\textrm{ex}}=473$ nm had a peak at 550 nm, whose energy position was shifted to $520{-}530$ nm at $\lambda_{ex}=442$ nm. An increase in the ratio $\textrm{R}_{p}^{\textrm{As}}/\textrm{R}_{p}^{\textrm{In}}$ was accompanied by a decrease in the photoluminescence intensity and a change in the ratio between the intensities of peaks depending on the annealing temperature. The observed effect was discussed from the viewpoint of recombination between electrons and holes in InAs nanocrystals.

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植入 In $${}^{\mathbf{+}$ 和 As $${}^{\mathbf{+}$ 离子的 SiO $${}_{mathbf{2}}$ 薄膜的可见光发光

Abstract 研究了在室温下用In（{}^{+}\）和As（{}^{+}\）离子植入的SiO（{}_{2}\）薄膜的可见光发光，这取决于As（{}^{+}\）离子的能量、进一步退火的温度以及激发辐射波长。选择了能量为 40、80 或 135 keV 的 As（{}^{+}/）离子和能量为 50 keV 的 In（{}^{+}/）离子，离子的平均投射范围之比 $text/strm{R}_{p}^{textrm{As}/\textrm{R}_{p}^{textrm{In}}/)分别为 1、2 和 3。进一步的退火在 900 和 1100 ({}^{\circ}$C 的温度下进行。光致发光光谱由波长为 $\lambda_{ex}=442$ 和 473 nm 的激光辐射激发。在 $\lambda_{textrm{ex}}=473$ nm 的激发下，光致发光光谱在 550 nm 处有一个峰值，在 $\lambda_{ex}=442$ nm 时，峰值的能量位置移动到了 $520{-}530$ nm 处。随着退火温度的升高，光致发光强度减弱，峰值之间的比值也发生了变化，这就是$\textrm{R}_{p}^{textrm{As}}/\textrm{R}_{p}^{textrm{In}}$比值的增加。我们从 InAs 纳米晶体中电子和空穴重组的角度讨论了所观察到的效应。

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来源期刊

Optoelectronics Instrumentation and Data Processing PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

期刊介绍： The scope of Optoelectronics, Instrumentation and Data Processing encompasses, but is not restricted to, the following areas: analysis and synthesis of signals and images; artificial intelligence methods; automated measurement systems; physicotechnical foundations of micro- and optoelectronics; optical information technologies; systems and components; modelling in physicotechnical research; laser physics applications; computer networks and data transmission systems. The journal publishes original papers, reviews, and short communications in order to provide the widest possible coverage of latest research and development in its chosen field.