International Review of Physics最新文献_第4页

Modelling and Simulation of Lightning Electromagnetic Fields Using an Hybrid Method for Poorly Conducting Ground Case 基于混合方法的低导电性地环境雷电电磁场建模与仿真

International Review of Physics Pub Date : 2015-08-31 DOI: 10.15866/irephy.v9i4.9187

A. Mimouni, Z. Azzouz, O. Harraz, B. Guemri, A. Cherifi

{"title":"Modelling and Simulation of Lightning Electromagnetic Fields Using an Hybrid Method for Poorly Conducting Ground Case","authors":"A. Mimouni, Z. Azzouz, O. Harraz, B. Guemri, A. Cherifi","doi":"10.15866/irephy.v9i4.9187","DOIUrl":"https://doi.org/10.15866/irephy.v9i4.9187","url":null,"abstract":"The aim of this paper is the calculation of lightning electromagnetic fields for a poorly conducting ground. For this objective, we first, discuss the return stroke models in two categories: Transmission line (TL) models and Travelling-Current Source (TCS) models. Usually, the representative expression of engineering models doesn’t include two of the TCS models which are the Diendorfer and Uman (DU) model and Modified DU with additional Decay (MDUD); for that, a new expression is proposed in this paper which solves this problem. Secondly, use is made of a hybrid technique based partially on the quasi- image theory, for the calculation of magnetic field, and on a Finite Difference Time Domain (F.D.T.D.) method, for the calculation of electric field components, taking into account the finite conductivity of the ground. The results are compared with other approximate numerical methods available in the literature. Our approach reproduces the same wave shapes of the electric and magnetic fields above the ground of a finite conductivity. Nevertheless, some discrepancies can be observed which can be explained by the differences in the lightning current model and current parameters.","PeriodicalId":448231,"journal":{"name":"International Review of Physics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121712664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SiC Schottky Diodes Forward Bias Electrical Behavior with Temperature and Under a Low Applied Magnetic Field SiC肖特基二极管在低外加磁场和温度下的正偏置电学特性

International Review of Physics Pub Date : 2015-06-30 DOI: 10.15866/IREPHY.V9I3.6334

M. A. Abid, M. Benzohra, D. Chalabi, Z. Hannachi, A. Saidane

{"title":"SiC Schottky Diodes Forward Bias Electrical Behavior with Temperature and Under a Low Applied Magnetic Field","authors":"M. A. Abid, M. Benzohra, D. Chalabi, Z. Hannachi, A. Saidane","doi":"10.15866/IREPHY.V9I3.6334","DOIUrl":"https://doi.org/10.15866/IREPHY.V9I3.6334","url":null,"abstract":"A study of Silicon Carbide Schottky diodes forward electrical behavior with temperature and under a low applied magnetic field was undertaken. Investigations involved four samples, two CSD01060 power diodes and two CD01060 medium power diodes. Silicon carbide is a promising material that has been recently used to manufacture electronic components operating at high power, high voltage, high frequency and high temperature. Among components made from silicon carbide, Schottky diodes are very important. They can withstand reverse voltages higher than 1200V and currents of 20A or more. Through forward I-V characteristics with and without applied magnetic field in temperature range from 100K to 300K with 50K steps, values of threshold voltage, ideality factor n and saturation current of four samples were determined. Temperature evolution of determined parameters is in relation with established theory while magnetic field effect appears only at low thermionic injection. Values of ideality factor are very close to 1 showing that current transport is diffusion dominated and there is no oxide layer at metal semiconductor interface. At low voltage, I-V characteristics indicate the presence of active deep defects in semiconductor band structure. High injection measurements at high temperatures confirmed results found at low injection and for low temperatures. Calculated series resistance shows good quality of devices and consistency of our results with literature.","PeriodicalId":448231,"journal":{"name":"International Review of Physics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132473223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Band Characteristics of a Parity-Time Symmetric Photonic Crystal Made of Multi-Level Atomic Systems 由多层原子系统构成的宇称时间对称光子晶体的能带特性

International Review of Physics Pub Date : 2015-06-30 DOI: 10.15866/IREPHY.V9I3.7817

J. Shen, Zhenping Xing, Mengmeng Xu, Hao Song, Jian Xu

{"title":"Band Characteristics of a Parity-Time Symmetric Photonic Crystal Made of Multi-Level Atomic Systems","authors":"J. Shen, Zhenping Xing, Mengmeng Xu, Hao Song, Jian Xu","doi":"10.15866/IREPHY.V9I3.7817","DOIUrl":"https://doi.org/10.15866/IREPHY.V9I3.7817","url":null,"abstract":"Partity-time symmetry enables a quantum system or an optical/electromagnetic structure to have real eigenvalue spectra of energy (or wave number). A relatively simple and convenient scenario, which takes advantage of multi-level transition and optical pumping in a four-level atomic system, is suggested in order to achieve parity-time symmetry of such an atomic medium. In the present parity-time symmetric atomic vapor, the real part of the obtained electric permittivity is a constant, and the imaginary part is an odd function (e.g., sine function of spatial coordinate). The optical characteristics of such a parity-time symmetric periodic dielectric have also been studied in this paper. It can be found that the Bloch wave numbers in the present periodic dielectric are purely real or purely imaginary. A threshold in the magnitude of the imaginary part of the parity-time symmetric permittivity for emergence of forbidden band is also indicated in our numerical calculation. The present scenario for realizing parity-time symmetric atomic vapor would find potential applications in some new photonic or quantum optical device design and fabrication.","PeriodicalId":448231,"journal":{"name":"International Review of Physics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131586915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Calculation of an Ambient Dose Equivalent Rate in the Vicinity of a Beam-Pipe Activated by 950 MeV/u 238U Ions 950mev /u - 238U离子激活的束流管附近环境剂量当量率的计算

International Review of Physics Pub Date : 2015-06-30 DOI: 10.15866/IREPHY.V9I3.7688

P. Vlk, M Tomislav Pavlovic

引用次数: 0

Effects on Structural and Electro-Optical Properties of Iron Incorporation to p-Zinc Oxide (ZnO) Thin Films Deposited by Dip-Coating Process 浸涂法制备对氧化锌薄膜结构和电光性能的影响

International Review of Physics Pub Date : 2015-04-30 DOI: 10.15866/IREPHY.V9I2.5759

Chewki Zegadi, A. Abderrahmane, A. Djelloul, S. Hamzaoui, M. Adnane, D. Chaumont, K. Abdelkebir

{"title":"Effects on Structural and Electro-Optical Properties of Iron Incorporation to p-Zinc Oxide (ZnO) Thin Films Deposited by Dip-Coating Process","authors":"Chewki Zegadi, A. Abderrahmane, A. Djelloul, S. Hamzaoui, M. Adnane, D. Chaumont, K. Abdelkebir","doi":"10.15866/IREPHY.V9I2.5759","DOIUrl":"https://doi.org/10.15866/IREPHY.V9I2.5759","url":null,"abstract":"In this paper, thin films of undoped Zinc Oxide (ZnO) and Fe-doped Zinc Oxide (ZnO: Fe) were prepared by a sol-gel process using the technique of coating .The effect of iron (Fe) incorporation on structural and electro-optical properties of ZnO films were investigated. The X-ray diffraction patterns showed that Fe-doping in Zinc Oxide thin film has affected their structural properties. All the films had polycrystalline structures, with a preferential growth along ZnO (002) plane. The crystallite size was calculated and found in the range of 25-40 (nm).The thin films were under compressive stress. The X-ray photoelectron spectroscopy results indicated that a high quality of ZnO and ZnO: Fe thin films were obtained, which are in good agreement with the results of the dislocation densities obtained from X-ray diffraction. The optical transmittance measurement revealed a high transmittance (> 85%) in the visible region and the role of Fe dopant in ZnO lattice was clearly illustrated by decreasing the optical gap and expanding the Urbach tail. The determination of type carrier conductivity affected by the incorporation of iron atoms in resistive ZnO to p-type conductivity was demonstrated by the electrical system measurement.","PeriodicalId":448231,"journal":{"name":"International Review of Physics","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126019299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Dielectric Properties of Polyaniline Emeraldine Base 聚苯胺祖母绿碱的介电性能

International Review of Physics Pub Date : 2015-04-30 DOI: 10.15866/IREPHY.V9I2.7111

P. Salovaara, M. Takala, K. Kannus

引用次数: 0

Effect of Rotation on the Free Vibrations in a Non-Homogeneous Orthotropic Elastic Hollow Sphere 旋转对非均匀正交各向异性弹性空心球自由振动的影响

International Review of Physics Pub Date : 2015-02-28 DOI: 10.15866/IREPHY.V9I1.5427

A. Farhan

引用次数: 0

New Method for Glass Selection in the Infrared Systems 红外系统中玻璃选择的新方法

International Review of Physics Pub Date : 2015-02-28 DOI: 10.15866/irephy.v9i1.5693

R. I. Ibrahim

引用次数: 0

Nonlinear Optimal Closed-Loop Guidance Law for Lunar Landing Mission Using Perturbation Feedback Control 基于微扰反馈控制的登月任务非线性最优闭环制导律

International Review of Physics Pub Date : 2015-02-28 DOI: 10.15866/IREPHY.V9I1.6156

H. Afshari, N. Rostamy, I. S. Nejad, A. Novinzadeh

引用次数: 2

Failure Load Prediction of Composite Rings Using Acoustic Emission Monitoring 基于声发射监测的复合材料环失效载荷预测

International Review of Physics Pub Date : 2015-02-28 DOI: 10.15866/IREPHY.V9I1.6157

V. Arumugam, G. Vaidyanathan, A. Stanley

引用次数: 0