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Semiconductor Physics Quantum Electronics & Optoelectronics最新文献

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Entropy, information and energy 熵，信息和能量
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-09-24 DOI: 10.1093/oso/9780198759867.003.0002
S. Tiwari
{"title":"Entropy, information and energy","authors":"S. Tiwari","doi":"10.1093/oso/9780198759867.003.0002","DOIUrl":"https://doi.org/10.1093/oso/9780198759867.003.0002","url":null,"abstract":"Chapter 2 brings forth the links between entropy and energy through their intimate link to information. Probabilities—as a statistical tool when there are unknowns—connect to information as well as to the various forms of entropy. Entropy is a variable introduced to characterize circumstances involving unknowns. Boltzmann entropy, von Neumann entropy, Shannon entropy and others can be viewed through this common viewpoint. This chapter broadens this discussion to include Fisher entropy—a measure that stresses locality—and the principle of minimum negentropy (or maximum entropy) to show how a variety of physical descriptions represented by equations such as the Schrödinger equation, diffusion equations, Maxwell-Boltzmann distributions, et cetera, can be seen through a probabilistic information-centric perspective.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80649264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Point perturbations 点扰动
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-09-24 DOI: 10.1093/oso/9780198759867.003.0007
S. Tiwari
{"title":"Point perturbations","authors":"S. Tiwari","doi":"10.1093/oso/9780198759867.003.0007","DOIUrl":"https://doi.org/10.1093/oso/9780198759867.003.0007","url":null,"abstract":"This chapter discusses the energetics of point perturbations arising from intrinsic and extrinsic defects, and intentional and unintentional impurities. Point perturbations can be short range or long range. This requires the inclusion of core potential, exchange correlation and Hartree or Hartree-Fock potential. Hubbard energy, which is useful for Hartree calculations in a localized state, is introduced. An approach to calculating the behavior arising in shallow dopants (long range) and deep centers (short range) is presented. The tight binding defect-molecule model is used to explore the appearance of bonding and antibonding states in vacancies, interstitials and substitutional deep centers and some common complexes, such as the DX center, using configuration coordinates to understand the electronic and lattice energy contributions in the defect behavior. Finally, the chapter summarizes other important centers, such as the Pb center and the F center, before reviewing the implications of centers in light interaction and Poole-Frenkel conduction.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79527362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Structure of Semiconductors 半导体的结构
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-69150-3_3
K. W. Böer, U. W. Pohl
{"title":"The Structure of Semiconductors","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_3","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_3","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73565064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier Generation 船代
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-06540-3_29-3
K. W. Böer, U. W. Pohl
{"title":"Carrier Generation","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-06540-3_29-3","DOIUrl":"https://doi.org/10.1007/978-3-319-06540-3_29-3","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76703866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Carriers in Magnetic Fields and Temperature Gradients 磁场中的载流子和温度梯度
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-69150-3_25
K. W. Böer, U. W. Pohl
{"title":"Carriers in Magnetic Fields and Temperature Gradients","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_25","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_25","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88950739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier Transport Induced and Controlled by Defects 缺陷诱导和控制的载流子输运
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-69150-3_28
K. W. Böer, U. W. Pohl
{"title":"Carrier Transport Induced and Controlled by Defects","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_28","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_28","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83241310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Shallow-Level Centers 浅能级中心
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-06540-3_18-3
K. W. Böer, U. W. Pohl
{"title":"Shallow-Level Centers","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-06540-3_18-3","DOIUrl":"https://doi.org/10.1007/978-3-319-06540-3_18-3","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88779080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photon–Free-Electron Interaction Photon-Free-Electron交互
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-69150-3_12
K. W. Böer, U. W. Pohl
{"title":"Photon–Free-Electron Interaction","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_12","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_12","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79321371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Origin of Band Structure 带状结构的起源
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-69150-3_6
K. W. Böer, U. W. Pohl
{"title":"The Origin of Band Structure","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_6","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_6","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75070634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier Transport in Low-Dimensional Semiconductors 低维半导体中的载流子输运
IF 0.9
Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2020-01-01 DOI: 10.1007/978-3-319-69150-3_27
K. W. Böer, U. W. Pohl
{"title":"Carrier Transport in Low-Dimensional Semiconductors","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-319-69150-3_27","DOIUrl":"https://doi.org/10.1007/978-3-319-69150-3_27","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82863837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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