Point perturbations

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY
S. Tiwari
{"title":"Point perturbations","authors":"S. Tiwari","doi":"10.1093/oso/9780198759867.003.0007","DOIUrl":null,"url":null,"abstract":"This chapter discusses the energetics of point perturbations arising from intrinsic and extrinsic defects, and intentional and unintentional impurities. Point perturbations can be short range or long range. This requires the inclusion of core potential, exchange correlation and Hartree or Hartree-Fock potential. Hubbard energy, which is useful for Hartree calculations in a localized state, is introduced. An approach to calculating the behavior arising in shallow dopants (long range) and deep centers (short range) is presented. The tight binding defect-molecule model is used to explore the appearance of bonding and antibonding states in vacancies, interstitials and substitutional deep centers and some common complexes, such as the DX center, using configuration coordinates to understand the electronic and lattice energy contributions in the defect behavior. Finally, the chapter summarizes other important centers, such as the Pb center and the F center, before reviewing the implications of centers in light interaction and Poole-Frenkel conduction.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2020-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Physics Quantum Electronics & Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1093/oso/9780198759867.003.0007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"QUANTUM SCIENCE & TECHNOLOGY","Score":null,"Total":0}
引用次数: 0

Abstract

This chapter discusses the energetics of point perturbations arising from intrinsic and extrinsic defects, and intentional and unintentional impurities. Point perturbations can be short range or long range. This requires the inclusion of core potential, exchange correlation and Hartree or Hartree-Fock potential. Hubbard energy, which is useful for Hartree calculations in a localized state, is introduced. An approach to calculating the behavior arising in shallow dopants (long range) and deep centers (short range) is presented. The tight binding defect-molecule model is used to explore the appearance of bonding and antibonding states in vacancies, interstitials and substitutional deep centers and some common complexes, such as the DX center, using configuration coordinates to understand the electronic and lattice energy contributions in the defect behavior. Finally, the chapter summarizes other important centers, such as the Pb center and the F center, before reviewing the implications of centers in light interaction and Poole-Frenkel conduction.
点扰动
本章讨论了由内在缺陷和外在缺陷以及有意和无意杂质引起的点扰动的能量学。点扰动可以是短距离的,也可以是长距离的。这需要包含核心电位、交换相关和Hartree或Hartree- fock电位。介绍了在局域状态下用于哈特里计算的哈伯德能量。提出了一种计算浅层掺杂(长范围)和深中心(短范围)产生的行为的方法。紧密结合缺陷-分子模型用于探索空位、间隙、取代深中心和一些常见配合物(如DX中心)的成键和反键状态的出现,使用构型坐标来了解缺陷行为中的电子和晶格能量贡献。最后,本章总结了其他重要的中心,如Pb中心和F中心,然后回顾了中心在光相互作用和普尔-弗伦克尔传导中的意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信