Semiconductor Physics Quantum Electronics & Optoelectronics最新文献

Role of ZnMn2O4 phase in formation of varistor characteristics in ZnO:Mn ceramics ZnMn2O4相在ZnO:Mn陶瓷压敏电阻特性形成中的作用

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.255

I.V. Markevich, T.R. Stara, I.P. Vorona, O.F. Isaieva, Ye.G. Gule, O.V. Melnichuk, L.Yu. Khomenkova

引用次数: 0

Influence of perovskite thickness on the performance of silver-doped NaZnBr3 perovskite solar cells using SCAPS software 钙钛矿厚度对掺银NaZnBr3钙钛矿太阳能电池性能的影响

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.321

M.O. Abdulmalik, E. Danladi

{"title":"Influence of perovskite thickness on the performance of silver-doped NaZnBr3 perovskite solar cells using SCAPS software","authors":"M.O. Abdulmalik, E. Danladi","doi":"10.15407/spqeo26.03.321","DOIUrl":"https://doi.org/10.15407/spqeo26.03.321","url":null,"abstract":"The absorbing layer thickness is a crucial parameter that significantly impacts the performance of perovskite solar cells (PSCs). In this study, we investigated the influence of the thickness of absorbing layer on the performance of silver-doped NaZnBr3 perovskite solar cells using the one-dimensional solar cell capacitance simulator (SCAPS-1D) software. The absorbing layer thickness was varied in the range of 0.1 to 1.3 µm. The initial solar cell after simulation gave an open-circuit voltage (Voc) of 1.174 V, short circuit current density (Jsc) of 14.012 mA/cm2, fill factor (FF) of 79.649%, and the power conversion efficiency (PCE) of 13.101%. For the optimized thickness of the perovskite layer of 1.0 µm, the following solar cell characteristics were obtained: Voc = 1.197 V, Jsc = 18.184 mA·cm–2, FF = 79.110%, and PCE = 17.215%. A 31% and 30% increase of the PCE and Jsc, respectively, was observed for the optimized device parameters as compared to the initial ones. Such finding confirms the premise for excellent photon management and enhancement of PSCs performance by selecting the thickness of absorbing layer.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274 对Soskin et al.《过阻尼系统中噪声诱发逃逸和跃迁的短时动力学》的评论，半导体物理，量子电子&光电子学,2022年。25、No . 3p . 262 - 274

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.352

V. A. Shneidman

引用次数: 0

Preparation and ionic conductivity of Ag8GeS6-based ceramic materials ag8ges6基陶瓷材料的制备及其离子电导率

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.270

A.I. Pogodin, M.J. Filep, S. Vorobiov, V. Komanicky, T.O. Malakhovska, O.P. Kokhan, V.V. Vakulchak

引用次数: 0

Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review) 嵌入硅纳米团簇结构的发光性能:工艺、掺杂和退火的影响(综述)

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.278

V.P. Melnik, V.G. Popov, B.M. Romanyuk, S.V. Antonin, A.A. Evtukh

{"title":"Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review)","authors":"V.P. Melnik, V.G. Popov, B.M. Romanyuk, S.V. Antonin, A.A. Evtukh","doi":"10.15407/spqeo26.03.278","DOIUrl":"https://doi.org/10.15407/spqeo26.03.278","url":null,"abstract":"Detection of photoluminescence (PL) in traditionally non-luminescent Si material (a typical indirect band semiconductor) attracts great attention both in the scientific aspect and for applications in the field of micro- and nanoelectronics and photoelectronics. Despite the success in technology and understanding of many features inherent to its PL characteristics, many problems have not yet been resolved. In particular – what is the origin of PL lines: quantum size, molecular complexes within SiO2, interface or volume localized states, etc. How to achieve the increase in the PL intensity and to provide excitation of it in different parts of the spectrum. The proposed review systematizes results of studies associated with these problems concerning the original technologies for creation of Si nanocrystals (nc-Si) and various research methods. In conclusion, we summarize the results on the properties of nc-Si-SiO2 luminescent structures depending on their technology of synthesis, photo- and structural features and application prospects for micro- and nanoelectronics as well as photoelectronics.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem 用图形表示技术和反问题的数值解法测定聚四氟乙烯薄膜中散射和乌尔巴赫吸收对光消的贡献

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.303

M.V. Sopinskyy, K.P. Grytsenko, C. Villringer, Yu.V. Kolomzarov, S. Schrader

{"title":"Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem","authors":"M.V. Sopinskyy, K.P. Grytsenko, C. Villringer, Yu.V. Kolomzarov, S. Schrader","doi":"10.15407/spqeo26.03.303","DOIUrl":"https://doi.org/10.15407/spqeo26.03.303","url":null,"abstract":"Ellipsometrically obtained spectral dependences of ordinary αxy and extra-ordinary αz extinction/attenuation coefficients within the spectral range λ = 300…980 nm of uniaxially anisotropic polytetrafluoroethylene (PTFE) films were analyzed. We considered the capabilities and specific features of the graphical representation technique for determining the contribution of Rayleigh scattering and Urbach absorption to light attenuation in the spectral range beyond fundamental absorption. It has been shown that the graphical approach enables to estimate these contributions qualitatively, semi-quantitatively or quantitatively, depending on the situation. The conclusions made using the analysis of graphical representation are confirmed by numerical solution of the inverse problem via simulation of the αxy (λ), αz (λ) experimental dependences within the framework of a best-fit procedure. Being based on both of these approaches, we have ascertained that, in the as-prepared PTFE films, the so-called anomalous light scattering (ALS) with the spectral dependence of scattering coefficient αs ≈ as λ–p (p > 4) takes place. Transformation of scattering from ALS to the Rayleigh one with p ≈ 4 due to annealing is accompanied by an increase of Urbach (subband) absorption. Both of these factors cause narrowing the dynamic range of extinction coefficient values. Both scattering and absorption coefficients are higher for the component of light polarized along the normal to the substrate as compared to the component polarized in parallel to it. The relationship between observed behavior of the scattering and absorption coefficients and the film structure has been discussed.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136377878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC SiC上TiO2、Gd2O3、Er2O3、SiO2薄膜的氧化、应力、形貌、局部电阻率与光学性能的关系

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.260

O.B. Okhrimenko, Yu.Yu. Bacherikov, P.M. Lytvyn, O.S. Lytvyn, V.Yu. Goroneskul, R.V. Konakova

{"title":"Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC","authors":"O.B. Okhrimenko, Yu.Yu. Bacherikov, P.M. Lytvyn, O.S. Lytvyn, V.Yu. Goroneskul, R.V. Konakova","doi":"10.15407/spqeo26.03.260","DOIUrl":"https://doi.org/10.15407/spqeo26.03.260","url":null,"abstract":"The relationship between internal mechanical stresses, surface morphology, nanoscale electrical properties, and optical characteristics in TiO2, Gd2O3, Er2O3, and SiO2 thin films on SiC substrates was investigated. The oxide films were synthesized using the rapid thermal annealing and analyzed through scanning spreading resistance microscopy, photoluminescence, and absorption spectroscopy. Tensile stresses were found in the films, they are attributed to thermal and lattice mismatch, oxidation, and grain boundaries. These stresses influence on surface morphology, resistivity variations, and photoluminescence intensity. Surface roughness and grain structure were found to correlate with variations in resistivity, which were attributed to conductive pathways along grain boundaries and possible metallic phases. Photoluminescence intensity was also observed to correlate with estimated lattice mismatch strain. Gd2O3/SiC exhibited the fewest defects, while Er2O3 and TiO2 showed more, with Er2O3 being the most mismatched and roughest. The results indicate that internal strains in oxide thin films on SiC substrates can influence on surface morphology, leading to formation of defects and spatial inhomogeneity. These fluctuations in local conductivity and luminescence center density have significant implications for dielectric and optical applications. The study provides insights for future processing refinements to mitigate internal strains and enhance the performance of oxide thin films in semiconductor and optical technologies.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136377879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SPR chromatic sensor with colorimetric registration for detection of gas molecules 用于气体分子检测的具有比色配准的SPR色传感器

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.343

O.V. Riabchenko, O.L. Kukla, O.N. Fedchenko, Yu.M. Shirshov, Z.I. Kazantseva

引用次数: 0

Transient response analysis of a resonant cavity enhanced light emitting diode 谐振腔增强发光二极管的瞬态响应分析

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.315

Sh.M. Eladl, A. Nasr

引用次数: 1

Detection of the explosive nitroaromatic compound simulants with chemosensory systems based on quartz crystal microbalance and chemiresistive sensor arrays 基于石英晶体微天平和化学电阻传感器阵列的化学传感系统检测爆炸性硝基芳香族化合物模拟物

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI: 10.15407/spqeo26.03.332

Z.I. Kazantseva, I.A. Koshets, A.V. Mamykin, A.S. Pavluchenko, O.L. Kukla, A.A. Pud, N.A. Ogurtsov, Yu.V. Noskov, R.V. Rodik, S.G. Vyshnevskyy

{"title":"Detection of the explosive nitroaromatic compound simulants with chemosensory systems based on quartz crystal microbalance and chemiresistive sensor arrays","authors":"Z.I. Kazantseva, I.A. Koshets, A.V. Mamykin, A.S. Pavluchenko, O.L. Kukla, A.A. Pud, N.A. Ogurtsov, Yu.V. Noskov, R.V. Rodik, S.G. Vyshnevskyy","doi":"10.15407/spqeo26.03.332","DOIUrl":"https://doi.org/10.15407/spqeo26.03.332","url":null,"abstract":"The work is devoted to investigations of possibility of rapid detection and subsequent identification of explosive substances by using the arrays of two types of sensor elements: quartz crystal microbalances and chemiresistive electrodes. Thin layers of calixarene compounds and composites of electrically conductive polymers, respectively, were used as the sensitive coatings. Several types of nitroaromatic compounds from nitrotoluene series were chosen as simulants of explosive substances: O-Nitrotoluene (2-MNT) and Nitrobenzene (MNB), the concentration of these volatile compounds varied from 10 to 100 ppm. The observed detection threshold, depending on the type of analyzed explosive simulants, was within the range of 1 to 10 ppm for quartz crystal sensors with calixarene sensitive films, and the response time was within 10…20 s for quartz crystal sensors and up to 1 min for chemiresistive sensors. It has been shown that among the tested calixarenes there are samples with high selective sensitivity. The possibility of qualitative identification of explosives at relatively low concentrations by using the statistical methods of chemical patterns recognition (the so-called “electronic nose”) has been demonstrated.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1