嵌入硅纳米团簇结构的发光性能:工艺、掺杂和退火的影响(综述)

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY
V.P. Melnik, V.G. Popov, B.M. Romanyuk, S.V. Antonin, A.A. Evtukh
{"title":"嵌入硅纳米团簇结构的发光性能:工艺、掺杂和退火的影响(综述)","authors":"V.P. Melnik, V.G. Popov, B.M. Romanyuk, S.V. Antonin, A.A. Evtukh","doi":"10.15407/spqeo26.03.278","DOIUrl":null,"url":null,"abstract":"Detection of photoluminescence (PL) in traditionally non-luminescent Si material (a typical indirect band semiconductor) attracts great attention both in the scientific aspect and for applications in the field of micro- and nanoelectronics and photoelectronics. Despite the success in technology and understanding of many features inherent to its PL characteristics, many problems have not yet been resolved. In particular – what is the origin of PL lines: quantum size, molecular complexes within SiO2, interface or volume localized states, etc. How to achieve the increase in the PL intensity and to provide excitation of it in different parts of the spectrum. The proposed review systematizes results of studies associated with these problems concerning the original technologies for creation of Si nanocrystals (nc-Si) and various research methods. In conclusion, we summarize the results on the properties of nc-Si-SiO2 luminescent structures depending on their technology of synthesis, photo- and structural features and application prospects for micro- and nanoelectronics as well as photoelectronics.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review)\",\"authors\":\"V.P. Melnik, V.G. Popov, B.M. Romanyuk, S.V. Antonin, A.A. Evtukh\",\"doi\":\"10.15407/spqeo26.03.278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Detection of photoluminescence (PL) in traditionally non-luminescent Si material (a typical indirect band semiconductor) attracts great attention both in the scientific aspect and for applications in the field of micro- and nanoelectronics and photoelectronics. Despite the success in technology and understanding of many features inherent to its PL characteristics, many problems have not yet been resolved. In particular – what is the origin of PL lines: quantum size, molecular complexes within SiO2, interface or volume localized states, etc. How to achieve the increase in the PL intensity and to provide excitation of it in different parts of the spectrum. The proposed review systematizes results of studies associated with these problems concerning the original technologies for creation of Si nanocrystals (nc-Si) and various research methods. In conclusion, we summarize the results on the properties of nc-Si-SiO2 luminescent structures depending on their technology of synthesis, photo- and structural features and application prospects for micro- and nanoelectronics as well as photoelectronics.\",\"PeriodicalId\":44695,\"journal\":{\"name\":\"Semiconductor Physics Quantum Electronics & Optoelectronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2023-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Physics Quantum Electronics & Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo26.03.278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"QUANTUM SCIENCE & TECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Physics Quantum Electronics & Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.03.278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"QUANTUM SCIENCE & TECHNOLOGY","Score":null,"Total":0}
引用次数: 1

摘要

传统的非发光硅材料(一种典型的间接能带半导体)的光致发光检测在科学和微纳电子学和光电子学领域的应用都受到了广泛的关注。尽管在技术上取得了成功,并且理解了PL特性固有的许多特征,但许多问题尚未得到解决。特别是- PL线的起源:量子大小,SiO2内的分子复合物,界面或体积局域态等。如何实现PL强度的增加,并在光谱的不同部分提供激发。这篇综述系统整理了与这些问题相关的研究结果,这些问题涉及到硅纳米晶体(nc-Si)的原始技术和各种研究方法。最后,从纳米硅-二氧化硅发光结构的合成技术、光性和结构特征以及在微纳电子学和光电子学方面的应用前景等方面对纳米硅-二氧化硅发光结构的性能进行了综述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review)
Detection of photoluminescence (PL) in traditionally non-luminescent Si material (a typical indirect band semiconductor) attracts great attention both in the scientific aspect and for applications in the field of micro- and nanoelectronics and photoelectronics. Despite the success in technology and understanding of many features inherent to its PL characteristics, many problems have not yet been resolved. In particular – what is the origin of PL lines: quantum size, molecular complexes within SiO2, interface or volume localized states, etc. How to achieve the increase in the PL intensity and to provide excitation of it in different parts of the spectrum. The proposed review systematizes results of studies associated with these problems concerning the original technologies for creation of Si nanocrystals (nc-Si) and various research methods. In conclusion, we summarize the results on the properties of nc-Si-SiO2 luminescent structures depending on their technology of synthesis, photo- and structural features and application prospects for micro- and nanoelectronics as well as photoelectronics.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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