Semiconductor Physics Quantum Electronics & Optoelectronics最新文献_第10页

Cavity-Polariton Formation and Relaxation Dynamics in Semiconductor Microcavities 半导体微腔中的腔极化子形成和弛豫动力学

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthb.3

J. Berger, S. Hallstein, W. Rühle, O. Lyngnes, G. Khitrova, H. Gibbs, M. Kira, F. Jahnke, S. W. Koch

引用次数: 0

Microfabrication Of Photonic Crystal Mirrors For Optoelectronic Devices. 光电器件用光子晶体镜的微加工。

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qtha.5

A. Scherer, J. O'Brien, Chuan-cheng Cheng, O. Painter, R. Lee

{"title":"Microfabrication Of Photonic Crystal Mirrors For Optoelectronic Devices.","authors":"A. Scherer, J. O'Brien, Chuan-cheng Cheng, O. Painter, R. Lee","doi":"10.1364/qo.1997.qtha.5","DOIUrl":"https://doi.org/10.1364/qo.1997.qtha.5","url":null,"abstract":"Photonic bandgap crystals are expected to be useful in defining microcavities for modifying spontaneous emission and as high reflectivity mirrors. Here, we use these photonic crystals as end-mirrors of edge-emitting GRINSCH lasers. These single quantum well lasers were grown by molecular beam epitaxy (MBE) and consist of waveguide structures which are in excess of 1.5 micrometers in thickness. To define a high-reflectivity photonic crystal mirror on the edge of these laser stripes, we use a surface mask of PMMA on top of an epitaxially deposited AIAs masking layer. After electron beam exposure of the resist and definition of the 100nm diameter holes through the GaAs cap layer and the 200 nm thick AIAs mask layer, high temperature field oxidation of the AIAs is performed at 340°C for 1.5 hours. This oxidizes the AIAs and forms a very robust etch mask. The hexagonal arrays of 100nm holes are then transferred to a depth of 2 microns through the laser waveguide structure so as to overlap with the optical field in the laser (Figure 1). The output mirror for the laser stripe consists of a standard cleaved facet.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"56 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83205111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Exciton Dynamics, Laser Action, and Cooperative Emission in Conducting Polymer Thin Films 导电聚合物薄膜中的激子动力学、激光作用和协同发射

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qfd.2

Z. Vardeny

引用次数: 0

Fluorescence lifetimes of Oriented Molecules in Microdroplets 微滴中定向分子的荧光寿命

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthb.5

M. Barnes, N. Lermer, W. Whitten, J. Ramsey, S. Arnold

{"title":"Fluorescence lifetimes of Oriented Molecules in Microdroplets","authors":"M. Barnes, N. Lermer, W. Whitten, J. Ramsey, S. Arnold","doi":"10.1364/qo.1997.qthb.5","DOIUrl":"https://doi.org/10.1364/qo.1997.qthb.5","url":null,"abstract":"Over the last several years there has been considerable interest in the properties of atomic resonance fluorescence in an optical cavity with a primary dimension comparable to the relevant transition wavelength.1 In particular, there has been great interest in the realization of strong atom-cavity coupling2 and the suppression of spontaneous emission into \"free-space\" modes. However, an important but poorly understood issue relevant to low- or zero-threshold condensed phase optical devices is the nonradiative coupling of the emitting species to a thermal bath. Unlike experiments involving dilute atomic beams where the transition is well defined and broadening is negligible, coupling to a thermal bath induces spectral broadening which is usually much larger than the cavity resonance width and may often exceed the cavity mode spacing. Interesting examples of such systems are solvated dyes whose condensed phase dynamics are well known and characterized. To date, several studies have been made on fluorescence properties of solvated dyes in microcavities,3,4,5 however additional complexities such as spatial and orientational averaging have obscured to some extent the connection between radiative and nonradiative processes in such systems. We discuss the observation of spontaneous emission rate modification (both enhancement and apparent suppression) for molecular species in a microcavity where both the molecular position and transition moment orientation are well defined.6 These experiments serve as an interesting test case of molecule-cavity systems in which the emitting species is nonradiatively coupled to a thermal bath.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"8 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85374593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of Photorefractive Polymers for Optical Processing 用于光学加工的光折变聚合物的优化

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qfc.3

K. Meerholz

引用次数: 0

Observation of Quantum Confined Stark Effect in Strain Compensated GaInAsSb/AlGaAsSb Multiple Quantum Well Structures 应变补偿GaInAsSb/AlGaAsSb多量子阱结构中量子受限Stark效应的观察

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.5

Yan Shi, Jian H. Zhao, J. Sarathy, G. Olsen, Hao Lee

引用次数: 0

Locking of the Stimulated Emission of a Microcavity Laser to the Electron Spin Precession Clock 微腔激光受激辐射对电子自旋进动时钟的锁定

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthd.5

J. Berger, S. Hallstein, Schneider, M. Hilpert, W. Rühle, H. Gibbs, G. Khitrova, F. Jahnke, S. W. Koch, M. Oestreich

引用次数: 0

Design and Expected Characteristics of 1.3μm GaInNAs/GaAs Vertical Cavity Surface Emitting Lasers 1.3μm GaInNAs/GaAs垂直腔面发射激光器的设计与预期特性

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qfb.5

T. Miyamoto, T. Takada, K. Takeuchi, F. Koyama, K. Iga

{"title":"Design and Expected Characteristics of 1.3μm GaInNAs/GaAs Vertical Cavity Surface Emitting Lasers","authors":"T. Miyamoto, T. Takada, K. Takeuchi, F. Koyama, K. Iga","doi":"10.1364/qo.1997.qfb.5","DOIUrl":"https://doi.org/10.1364/qo.1997.qfb.5","url":null,"abstract":"The long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of key devices for future optical communication and interconnection systems. Room temperature (RT) continuous-wave (CW) operations were demonstrated for long wavelength VCSELs with a reduced threshold current and an increased operating temperature [1, 2]. However, temperature characteristics such as characteristic temperature T0 and the maximum operating temperature are not sufficient for use in actual systems. These are due to carrier leakage related to the small conduction-band discontinuity of GaInAsP/InP systems, difficulties in fabrication of small current confining structures and high reflective mirrors, a large non-radiative absorption, and so on. Recently, the GaInNAs material was proposed as a new long wavelength system emitting 1.3μm and 1.55μm grown on GaAs substrates [3] and 1.2μm RT-CW operations of edge emitting lasers have been demonstrated [4]. The bandgap bowing between arsenide and nitride system is very large and thus long wavelength emission and large conduction-band offset are expected for this material system.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"8 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91247395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum Mode Correlations in Vertical Cavity Surface Emitting Lasers 垂直腔面发射激光器中的量子模式相关

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthb.4

D. Kilper, P. Roos, J. Carlsten, K. Lear

{"title":"Quantum Mode Correlations in Vertical Cavity Surface Emitting Lasers","authors":"D. Kilper, P. Roos, J. Carlsten, K. Lear","doi":"10.1364/qo.1997.qthb.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qthb.4","url":null,"abstract":"Considerable progress has been made during the past decade in understanding the quantum noise processes associated with the generation of photon-number squeezed light from conventional semiconductor lasers. Microcavity lasers, such as the vertical cavity surface emitting laser (VCSEL), have also been predicted to generate photon-number squeezed light based upon the high impedance pump noise suppression model1. Previous measurements, however, have only shown noise far above shot noise2. Several features of VCSELs are expected to lead to important differences from the quantum photon statistics in conventional edge-emitters. Because the cavity length is matched to the lasing wavelength, only a single longitudinal mode is present. This eliminates noise contributions from longitudinal mode competition noise. However, VCSELs often oscillate in multiple transverse modes, particularly for high efficiency devices operating at high pump rates, necessary for squeezing. Although quantum mode correlation effects between multiple longitudinal modes have been studied extensively in edge-emitting devices3, quantum correlations between different transverse modes have not been observed. Furthermore, because of the high mirror reflectivities (>99%) squeezed output from a VCSEL can provide confirmation of the high impedance pump noise suppression model predictions in the good cavity limit, for which the theory was formulated. The enhanced spontaneous emission into the lasing mode that is characteristic of these devices can potentially lead to squeezed output at all pump rates. In present devices, the microcavity effects contribute to a low threshold current that allows for the high pump rates necessary for squeezed output to be achieved at room temperature without damage to the laser.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"85 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83892540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Time Resolved Amplitude and Phase of Coherent Four Wave Mixing Emission from GaAs Quantum Wells 砷化镓量子阱相干四波混频发射的时间分辨振幅和相位

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qwb.4

W. Walecki, D. Fittinghoff, A. Smirl

引用次数: 0