Semiconductor Physics Quantum Electronics & Optoelectronics最新文献_第10页

Quantum Cascade Whispering Gallery Lasers 量子级联低语画廊激光器

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qfa.1

C. Gmachl, J. Faist, F. Capasso, C. Sirtori, D. Sivco, A. Cho

引用次数: 0

New interpretation of quantum wire luminescence using a non standard description of the valence band states 利用价带态的非标准描述对量子线发光的新解释

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.4

F. Filipowitz, U. Marti, M. Glick, F. Reinhart, J. Wang, P. von Allmen, J. Leburton

{"title":"New interpretation of quantum wire luminescence using a non standard description of the valence band states","authors":"F. Filipowitz, U. Marti, M. Glick, F. Reinhart, J. Wang, P. von Allmen, J. Leburton","doi":"10.1364/qo.1997.qthe.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.4","url":null,"abstract":"Theoretical predictions1 have shown that confined structures, quantum wires (QWR) or quantum dots (QD), should have higher gain and absorption, compared to quantum wells, owing to the discontinuity in the joint density of states. We use a non standard description of the valence band states2 to evaluate the absorption of V-shaped quantum wires close to the band edge. We choose the projection axis of the angular momentum of the valence band states along the non-confined direction of the wire. This description has two advantages: (i) the masses are isotropic along the two confined directions and (ii) the light hole (lh) and heavy hole (hh) states are decoupled at kz=0, if the kinetic energy of the confined holes is the same along both confined directions and the energy separation between the {lh,hh}i and {lh,hh}i+1 subbands is high. This description is particularly advantageous close to the band edge where transitions are mostly excitonic. Photoluminescence (PL) and photoluminescence excitation (PLE) measurements made on V-shaped quantum wires are reinterpreted: the lowest energy transition is a e1-lh1 excitonic transition and the second lowest is a e1-hh1 excitonic transition. This new interpretation is the first to explain the lower intensity of the lowest energy peak observed in PL and PLE measurements. To assess the impact of the non-uniformity of the wires, we evaluate the absorption of V-shaped QWR (V-QWR) grown by MBE deposition over a non-planar substrate3.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85298785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Time-Domain Measurements of Light Propagation in Dielectric Spheres 介电球中光传播的时域测量

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.8

W. Whitten, R. Shaw, M. Barnes, J. Ramsey

引用次数: 0

Interferometrie Four-Wave-Mixing Spectroscopy on Semiconductors 半导体上的干涉四波混频光谱

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qwb.2

M. Wehner, J. Hetzler, M. Wegener

引用次数: 0

Vertical cavity surface emitting laser with self-assembled quantum dots 具有自组装量子点的垂直腔面发射激光器

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qwa.2

K. Nishi, H. Saito, S. Sugou

{"title":"Vertical cavity surface emitting laser with self-assembled quantum dots","authors":"K. Nishi, H. Saito, S. Sugou","doi":"10.1364/qo.1997.qwa.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qwa.2","url":null,"abstract":"Recently, low-dimensional quantum structures such as quantum dots (QDs) and quantum wires (QWIs), has been attracting much interest due to their novel physical properties and consequent improvements in device performances.1) When the ideal QD or QWI structures are achieved, higher gain and lower threshold current in laser diodes are expected.2) Among the many fabrication methods reported for such structures, self-assembled quantum-dot (SAQD) growth techniques3-5) are particularly notable. They positively utilize the islanding growth in highly strained heteroepitaxial systems, such as InGaAs on GaAs. The SAQDs can be simply fabricated by molecular beam epitaxy (MBE)3) or metal-organic vapor phase epitaxy (MOVPE)4),5) and they have high crystal quality and uniform size distributions of within 10% as well as high surface densities of more than about 1011cm-2. Using these SAQDs, low-threshold QD edge-emitting lasers have been fabricated.6-8) We expect to make even more advanced lasers, such as QD vertical-cavity surface-emitting lasers (VCSELs) using QDs in the active region.9) The QD-VCSEL is especially attractive for controlling both the electron and photon modes in a microcavity structure.10) When the cavity mode coincides with the narrow bandwidth light emission that originates from the delta-function-like density of states in uniform QDs, a high-performance light source with very low threshold current can be realized. On the other hand, the gain width, which critically determines the temperature characteristics of the VCSEL,11) can be designated in QD-VCSELs by controlling the dot size distribution. Therefore, for improving and modifying device performances, we believe that the QD-VCSEL is the optimum optical device utilizing the QD structure. In this article, we report the fabrication of a QD-VCSEL and the observation of lasing oscillation at room temperature.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"117 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88470218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser Annealing of Trap States in ZnSe Quantum Dots ZnSe量子点阱态的激光退火

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.10

C. A. Smith, S. Risbud, J. Cooke, Howard W. H. Lee

引用次数: 0

Simulation of High-Power Mid-IR Interband Cascade Laser 大功率中红外带间级联激光器的仿真

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qfa.2

I. Vurgaftman, J. R. Meyer, Chris Felix, L. Ram-Mohan

{"title":"Simulation of High-Power Mid-IR Interband Cascade Laser","authors":"I. Vurgaftman, J. R. Meyer, Chris Felix, L. Ram-Mohan","doi":"10.1364/qo.1997.qfa.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qfa.2","url":null,"abstract":"There is a critical need for high-power mid-infrared diode lasers to be used in such military and commercial applications as IR countermeasures, IR illumination, and long-range chemical sensing. To date, the highest reported cw output power from a semiconductor diode emitting in the 3-5 μm spectral region has been 215 mW/facet. This was obtained from a 250-μm stripe at 80 K,1 and cw operation has never been observed in a III-V diode laser above 175 K.2 Although output powers exceeding 1 W are readily attainable from near-IR (λ ≈ 1 μm) lasers operating at or near ambient temperature, mid-IR emitters are inherently at a disadvantage due to the inverse scaling of the differential slope efficiency (dP/dI) with wavelength. That is, while the same current is required to inject one electron-hole pair as in a near-IR diode laser, the energy of the photon that results is 3-5 times smaller. A recent breakthrough has been the demonstration that this fundamental limitation may be circumvented by employing a cascade geometry. The unipolar quantum cascade laser (QCL) of Faist et al.,3 which achieves lasing due to optical intersubband transitions, can in principle emit as many photons for each injected electron as there are periods in the structure. However, high cw operating temperatures and large cw output powers have not yet been reported, in part because the threshold current density is inevitably rather large owing to a rapid nonradiative phonon relaxation of the population inversion.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"2 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80432654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin-Gratings and In-Well Carrier Transport Measurements in GaAs/AlGaAs Multiple Quantum Wells GaAs/AlGaAs多量子阱中的自旋光栅和阱内载流子输运测量

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.3

P. Riblet, AR Cameron, A. Miller

引用次数: 0

Anomalous Diffusion of Repulsive Bosons in a Two-Dimensional Random Potential 二维随机势中排斥玻色子的反常扩散

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthb.2

T. Fukuzawa, S. Y. Kim, T. Gustafson, E. Haller, E. Yamada

引用次数: 0

Subwavelength Multilayer Binary Grating Design for Implementing Photonic Crystals 实现光子晶体的亚波长多层二元光栅设计

IF 0.9

Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qtha.4

R. Tyan, P. Sun, A. Salvekar, H. Chou, Chuan-cheng Cheng, F. Xu, A. Scherer, Y. Fainman

{"title":"Subwavelength Multilayer Binary Grating Design for Implementing Photonic Crystals","authors":"R. Tyan, P. Sun, A. Salvekar, H. Chou, Chuan-cheng Cheng, F. Xu, A. Scherer, Y. Fainman","doi":"10.1364/qo.1997.qtha.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qtha.4","url":null,"abstract":"Subwavelength multilayer binary gratings (SMBG) can be seen as a 2-D periodic structures (see Fig.1a) with two periodic directions along the grating vector and the multilayer cascading direction. Such structures combine strong form- birefringence1,2 of the subwavelength grating with high reflectivity due the multilayer structure allowing us to design polarization sensitive microdevices, such as polarization selective mirror and polarizing beam splitter. Recently3 we introduce a new polarizing beam splitter (PBS) microdevice design built of SMBGs. Not only this novel design increases the angular and spectral range of the PBS microdevice in comparison to conventional PBS designs, but most importantly, our microdevice can operate with normally incident light, acting as a high-efficiency polarization-selective mirror. Microdevice with such features are critical for microlaser designs. Since the SMBG is a 2-D periodic structure, it can also be used to design a 2-D photonic crystal. In this manuscript, we summarize the design, modeling, and characterization of the SMBG structure designed to implement polarization sensitive microdevice, and also introduce and discuss a 2-D photonic crystal design based on SMBG.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"31 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87465869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3