Semiconductor Physics Quantum Electronics & Optoelectronics最新文献_第10页

Interferometrie Four-Wave-Mixing Spectroscopy on Semiconductors 半导体上的干涉四波混频光谱

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qwb.2

M. Wehner, J. Hetzler, M. Wegener

引用次数: 0

New interpretation of quantum wire luminescence using a non standard description of the valence band states 利用价带态的非标准描述对量子线发光的新解释

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.4

F. Filipowitz, U. Marti, M. Glick, F. Reinhart, J. Wang, P. von Allmen, J. Leburton

{"title":"New interpretation of quantum wire luminescence using a non standard description of the valence band states","authors":"F. Filipowitz, U. Marti, M. Glick, F. Reinhart, J. Wang, P. von Allmen, J. Leburton","doi":"10.1364/qo.1997.qthe.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.4","url":null,"abstract":"Theoretical predictions1 have shown that confined structures, quantum wires (QWR) or quantum dots (QD), should have higher gain and absorption, compared to quantum wells, owing to the discontinuity in the joint density of states. We use a non standard description of the valence band states2 to evaluate the absorption of V-shaped quantum wires close to the band edge. We choose the projection axis of the angular momentum of the valence band states along the non-confined direction of the wire. This description has two advantages: (i) the masses are isotropic along the two confined directions and (ii) the light hole (lh) and heavy hole (hh) states are decoupled at kz=0, if the kinetic energy of the confined holes is the same along both confined directions and the energy separation between the {lh,hh}i and {lh,hh}i+1 subbands is high. This description is particularly advantageous close to the band edge where transitions are mostly excitonic. Photoluminescence (PL) and photoluminescence excitation (PLE) measurements made on V-shaped quantum wires are reinterpreted: the lowest energy transition is a e1-lh1 excitonic transition and the second lowest is a e1-hh1 excitonic transition. This new interpretation is the first to explain the lower intensity of the lowest energy peak observed in PL and PLE measurements. To assess the impact of the non-uniformity of the wires, we evaluate the absorption of V-shaped QWR (V-QWR) grown by MBE deposition over a non-planar substrate3.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85298785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Femtosecond luminescence of semiconductor nanostructures 半导体纳米结构的飞秒发光

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthd.2

B. Deveaud, S. Haacke, M. Hartig, R. Ambigapathy, I. B. Joseph, R. A. Taylor

引用次数: 0

Coulomb Contributions to Exciton Saturation in Room Temperature GaAs-AlxGa1-xAs Multiple Quantum Wells 库仑对室温GaAs-AlxGa1-xAs多量子阱中激子饱和的贡献

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthd.3

M. Holden, GT Kennedy, A. Miller

引用次数: 0

Picosecond Switching using Resonant Nonlinearities in a Quantum Well Device 在量子阱器件中使用共振非线性的皮秒开关

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.1

P. LiKamWa, A. Kan’an

{"title":"Picosecond Switching using Resonant Nonlinearities in a Quantum Well Device","authors":"P. LiKamWa, A. Kan’an","doi":"10.1364/qo.1997.qthe.1","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.1","url":null,"abstract":"Resonant nonlinearities in quantum well structures arise from exciton saturation and band-filling due to photogeneration of free carriers. Through the Kramers-Kronig’s relation, a corresponding change in refractive index occurs close to the bandgap energy where the absorption change occurs. The change in refractive index can effectively be used to produce optical switching in devices that can convert phase changes into intensity changes or directional switching1. Although the turn-on of carrier induced nonlinearities is effectively an instantaneous effect which follows the photon pulse, these photogenerated carriers tend to linger on well after the photon pulse has passed. The recovery time is usually governed by carrier relaxation times2,3 or carrier removal rates4. In this work, we demonstrate all-optical switching in a Y-junction device in which two control optical pulses are used for each switching event. The first control pulse flips the state of the switch while the second control pulse turns the switch back to its initial state. The switch dynamics is related to other carrier induced devices demonstrated by other independent researchers5,6.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"19 7","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72460008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microcavity Semiconductor Lasers: Parameter Evaluation and Performances 微腔半导体激光器:参数评价与性能

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qfb.3

G. Bava, P. Debernardi

引用次数: 0

Simulation of High-Power Mid-IR Interband Cascade Laser 大功率中红外带间级联激光器的仿真

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qfa.2

I. Vurgaftman, J. R. Meyer, Chris Felix, L. Ram-Mohan

{"title":"Simulation of High-Power Mid-IR Interband Cascade Laser","authors":"I. Vurgaftman, J. R. Meyer, Chris Felix, L. Ram-Mohan","doi":"10.1364/qo.1997.qfa.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qfa.2","url":null,"abstract":"There is a critical need for high-power mid-infrared diode lasers to be used in such military and commercial applications as IR countermeasures, IR illumination, and long-range chemical sensing. To date, the highest reported cw output power from a semiconductor diode emitting in the 3-5 μm spectral region has been 215 mW/facet. This was obtained from a 250-μm stripe at 80 K,1 and cw operation has never been observed in a III-V diode laser above 175 K.2 Although output powers exceeding 1 W are readily attainable from near-IR (λ ≈ 1 μm) lasers operating at or near ambient temperature, mid-IR emitters are inherently at a disadvantage due to the inverse scaling of the differential slope efficiency (dP/dI) with wavelength. That is, while the same current is required to inject one electron-hole pair as in a near-IR diode laser, the energy of the photon that results is 3-5 times smaller. A recent breakthrough has been the demonstration that this fundamental limitation may be circumvented by employing a cascade geometry. The unipolar quantum cascade laser (QCL) of Faist et al.,3 which achieves lasing due to optical intersubband transitions, can in principle emit as many photons for each injected electron as there are periods in the structure. However, high cw operating temperatures and large cw output powers have not yet been reported, in part because the threshold current density is inevitably rather large owing to a rapid nonradiative phonon relaxation of the population inversion.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"2 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80432654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin-Gratings and In-Well Carrier Transport Measurements in GaAs/AlGaAs Multiple Quantum Wells GaAs/AlGaAs多量子阱中的自旋光栅和阱内载流子输运测量

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthe.3

P. Riblet, AR Cameron, A. Miller

引用次数: 0

Anomalous Diffusion of Repulsive Bosons in a Two-Dimensional Random Potential 二维随机势中排斥玻色子的反常扩散

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qthb.2

T. Fukuzawa, S. Y. Kim, T. Gustafson, E. Haller, E. Yamada

引用次数: 0

Subwavelength Multilayer Binary Grating Design for Implementing Photonic Crystals 实现光子晶体的亚波长多层二元光栅设计

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Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 1997-01-01 DOI: 10.1364/qo.1997.qtha.4

R. Tyan, P. Sun, A. Salvekar, H. Chou, Chuan-cheng Cheng, F. Xu, A. Scherer, Y. Fainman

{"title":"Subwavelength Multilayer Binary Grating Design for Implementing Photonic Crystals","authors":"R. Tyan, P. Sun, A. Salvekar, H. Chou, Chuan-cheng Cheng, F. Xu, A. Scherer, Y. Fainman","doi":"10.1364/qo.1997.qtha.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qtha.4","url":null,"abstract":"Subwavelength multilayer binary gratings (SMBG) can be seen as a 2-D periodic structures (see Fig.1a) with two periodic directions along the grating vector and the multilayer cascading direction. Such structures combine strong form- birefringence1,2 of the subwavelength grating with high reflectivity due the multilayer structure allowing us to design polarization sensitive microdevices, such as polarization selective mirror and polarizing beam splitter. Recently3 we introduce a new polarizing beam splitter (PBS) microdevice design built of SMBGs. Not only this novel design increases the angular and spectral range of the PBS microdevice in comparison to conventional PBS designs, but most importantly, our microdevice can operate with normally incident light, acting as a high-efficiency polarization-selective mirror. Microdevice with such features are critical for microlaser designs. Since the SMBG is a 2-D periodic structure, it can also be used to design a 2-D photonic crystal. In this manuscript, we summarize the design, modeling, and characterization of the SMBG structure designed to implement polarization sensitive microdevice, and also introduce and discuss a 2-D photonic crystal design based on SMBG.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"31 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87465869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3