利用价带态的非标准描述对量子线发光的新解释

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY
F. Filipowitz, U. Marti, M. Glick, F. Reinhart, J. Wang, P. von Allmen, J. Leburton
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引用次数: 0

摘要

理论预测1表明,由于态的关节密度的不连续,与量子阱相比,受限结构,量子线(QWR)或量子点(QD)应该具有更高的增益和吸收。我们使用价带状态的非标准描述2来评估v形量子线靠近带边缘的吸收。我们选择价带态的角动量沿导线的非约束方向的投影轴。这种描述有两个优点:(i)质量沿两个受限方向是各向同性的;(ii)如果受限洞的动能沿两个受限方向相同,且{lh,hh}i和{lh,hh}i+1子带之间的能量分离高,则轻洞(lh)和重洞(hh)态在kz=0处解耦。这种描述在靠近能带边缘的地方特别有利,因为那里的跃迁大多是激子的。在v形量子线上进行的光致发光(PL)和光致发光激发(PLE)测量被重新解释:最低的能量跃迁是e1-lh1激子跃迁,第二低的是e1-hh1激子跃迁。这一新的解释首次解释了在PL和PLE测量中观测到的最低能量峰的较低强度。为了评估导线不均匀性的影响,我们评估了MBE沉积在非平面基板上生长的v形QWR (V-QWR)的吸收。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New interpretation of quantum wire luminescence using a non standard description of the valence band states
Theoretical predictions1 have shown that confined structures, quantum wires (QWR) or quantum dots (QD), should have higher gain and absorption, compared to quantum wells, owing to the discontinuity in the joint density of states. We use a non standard description of the valence band states2 to evaluate the absorption of V-shaped quantum wires close to the band edge. We choose the projection axis of the angular momentum of the valence band states along the non-confined direction of the wire. This description has two advantages: (i) the masses are isotropic along the two confined directions and (ii) the light hole (lh) and heavy hole (hh) states are decoupled at kz=0, if the kinetic energy of the confined holes is the same along both confined directions and the energy separation between the {lh,hh}i and {lh,hh}i+1 subbands is high. This description is particularly advantageous close to the band edge where transitions are mostly excitonic. Photoluminescence (PL) and photoluminescence excitation (PLE) measurements made on V-shaped quantum wires are reinterpreted: the lowest energy transition is a e1-lh1 excitonic transition and the second lowest is a e1-hh1 excitonic transition. This new interpretation is the first to explain the lower intensity of the lowest energy peak observed in PL and PLE measurements. To assess the impact of the non-uniformity of the wires, we evaluate the absorption of V-shaped QWR (V-QWR) grown by MBE deposition over a non-planar substrate3.
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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