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2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)最新文献

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Simulation parameters of the microwave synthesizer for radar system 雷达系统微波合成器的仿真参数
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552091
Y. Gramarchuk, N. Kobak, V. Petrenko, S. Slesarenko
{"title":"Simulation parameters of the microwave synthesizer for radar system","authors":"Y. Gramarchuk, N. Kobak, V. Petrenko, S. Slesarenko","doi":"10.1109/ELNANO.2013.6552091","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552091","url":null,"abstract":"Now radiolocation is one of the fastest growing industries in electronics. One of the characteristics of radiolocation (radar) technology is its rapid continuous improvement, due to the continuous development of new elements, theory and practice of radar. Modern radar uses the latest achievements of information theory and high-frequency electronics. The main object of our work is the assistance in researches of synthesizer of frequency in the block of input generator, which must give frequency 8.5 Ghz to provide the next block of the device the frequency 34 Ghz with the help of multiplier. Important part of our work is the simulation for synthesizer of frequency using software package “ADIsimPLL”.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124272973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ge/GaAs thin films for thermometer and bolometer application 用于温度计和测热计的Ge/GaAs薄膜
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552037
V. F. Mitin, P. Lytvyn, V. V. Kholevchuk, V. Mitin, E. Venger, O. Mironov
{"title":"Ge/GaAs thin films for thermometer and bolometer application","authors":"V. F. Mitin, P. Lytvyn, V. V. Kholevchuk, V. Mitin, E. Venger, O. Mironov","doi":"10.1109/ELNANO.2013.6552037","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552037","url":null,"abstract":"We demonstrate that the heavily doped and completely compensated Ge thin films on semi-insulating GaAs substrates are very promising for bolometer and thermoresistor application in the 250 K to 500 K temperature range. These films have single crystal structure, the pronounced nano-relief surface and compositional nano-inhomogeneities. The conductivity of such films is two-dimensional percolation of charge carriers through a fluctuating electrostatic potential.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125641823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D IC cooling mechanism by using signaling vias 采用信号通孔的3D IC冷却机制
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552044
A. Gevorgyan
{"title":"3D IC cooling mechanism by using signaling vias","authors":"A. Gevorgyan","doi":"10.1109/ELNANO.2013.6552044","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552044","url":null,"abstract":"In this paper is discussed the problem of efficient thermal energy removal in 3D integrated circuits (IC) based on thermal via insertion in parallel with using existing signaling vias. This method allows to minimize the number of additional thermal vias and by this save useful area of chip.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114639054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The analysis of technical solutions for medical ozonators 医用臭氧发生器的技术解决方案分析
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552047
E. I. Sokol, A. V. Kipenskiy, V. Kulichenko, R. Tomashevskiy, T. M. Barkhotkina
{"title":"The analysis of technical solutions for medical ozonators","authors":"E. I. Sokol, A. V. Kipenskiy, V. Kulichenko, R. Tomashevskiy, T. M. Barkhotkina","doi":"10.1109/ELNANO.2013.6552047","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552047","url":null,"abstract":"The article deals with the basic principles of control systems construction in the medical ozone generators. The authors present and analyzes the specific diagram of the electrical and pneumatic part of ozonator. According to analysis results the authors give recommendations for the considered systems realization in the medical ozone generators.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"1 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122703796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Functional film peculiarities of the «metal-insulator-metal» structure devices 金属-绝缘体-金属结构器件的功能膜特性
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552026
N. Korobova, V. Vodopyanov, Yu. S. Stepanova, Yu. V. Cherkasova, S. Timoshenkov, N. Plis, O. Isaikina
{"title":"Functional film peculiarities of the «metal-insulator-metal» structure devices","authors":"N. Korobova, V. Vodopyanov, Yu. S. Stepanova, Yu. V. Cherkasova, S. Timoshenkov, N. Plis, O. Isaikina","doi":"10.1109/ELNANO.2013.6552026","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552026","url":null,"abstract":"The important parts of material science in the film preparation fields and sol-gel technology are presented. Al2O3/SiO2 and ZrO2/Y2O3 films have been prepared by electrophoresis deposition of organometallic compounds as dielectric coatings on metal substrates and annealed at different temperatures. The films were characterized by X-ray diffraction (XRD), atomic force and scanning microscopy (AFM) and (SEM) respectively. The surface grains appeared to get larger in size and the root mean square roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The properties dependence of the film's chemical composition, impurities and microstructure, which are closely correlated with the deposition technique and conditions were investigated. A short analysis of sol-gel technology and thin film preparation methods of dielectric materials has been given.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123389579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nanocrystalline cerium oxide films as a functional material for photodetectors of bioluminescent signal 纳米氧化铈薄膜作为生物发光信号光电探测器的功能材料
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552034
N. Maksimchuk, A. Borisov
{"title":"Nanocrystalline cerium oxide films as a functional material for photodetectors of bioluminescent signal","authors":"N. Maksimchuk, A. Borisov","doi":"10.1109/ELNANO.2013.6552034","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552034","url":null,"abstract":"Photosensitive nanocrystalline cerium oxide films (CeOx-films) have been obtained. Physical properties of the thin CeOx-films have been studied for the purpose of their application as a functional material of new type of photodetectors for bioluminescence registration. Through changing microstructure, morphology and composition of the films we have determined the main principles of their physical properties control. The influence of technological factors on the photoelectrical, optical, temperature and electrophysical properties of the cerium oxide films has been studied. On the basis of the synthesized nanocrystalline CeOx-films obtained by the \"explosive evaporation\" method we have developed new types of photodetectors for registration of bioluminescent signal (photoresistors and photodiodes) with enhanced photosensitivity (310-330 μA/lm·V) in the visible spectrum. Photoresistors and photodiodes with CeOx-films allowed us to create a new type of bioluminescent sensor based on the effective semiconductor photodetectors. Such photodetectors haven't disadvantages typical for photomultiplier tubes and avalanche photodiodes.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131377075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carbon-rich nanostructured a-SiC for cold emitters 用于冷发射体的富碳纳米结构a-SiC
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552000
S. A. Gordienko, A. Nazarov, P. Lytvyn, A. Stadnik, Yu Yu Gomeniyuk, A. V. Rusavsky, A. Vasin, V. Stepanov, V. Lysenko, T. M. Nazarova
{"title":"Carbon-rich nanostructured a-SiC for cold emitters","authors":"S. A. Gordienko, A. Nazarov, P. Lytvyn, A. Stadnik, Yu Yu Gomeniyuk, A. V. Rusavsky, A. Vasin, V. Stepanov, V. Lysenko, T. M. Nazarova","doi":"10.1109/ELNANO.2013.6552000","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552000","url":null,"abstract":"This work describes emission properties of a new nanostructured material which is carbon-rich amorphous (a) SiC deposited on silicon wafer. Even non-optimized technology demonstrates that the field enhanced factor of the electron emission can reach of 1000 with current density near 1×10-3A/cm2 and efficiency of electron emission near 10%. A good correlation between charge transfer through the a-SiC layer and electron emission from the material in high vacuum is observed.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131588757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FPGA based capacitive touch pad/interface 基于FPGA的电容触摸板/接口
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552074
R. Stojanovic, N. Lekic, Z. Mijanovic, Jovan Kovačević
{"title":"FPGA based capacitive touch pad/interface","authors":"R. Stojanovic, N. Lekic, Z. Mijanovic, Jovan Kovačević","doi":"10.1109/ELNANO.2013.6552074","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552074","url":null,"abstract":"This paper reports a sensing principle and FPGA design of a capacitive touch pad/interface where the sensing pad is connected to the I/O pin via an external resistor. The circuit transforms the change in pad capacitance into voltage amplitude during charging, discharging and sharing phases. By using multiple pins and resistors, a multipad system is achieved. The sensing algorithm is implemented in VHDL code. The read-out cycle is parallel and short, what results in a high noise immunity in low frequency range. The silicon/hardware requirements are minimal. The interface can be easily embedded into a system-onchip and used for human-machine, bio-chemical and mechanical sensor interfacing.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114441432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The use of the dirichlet kernel in the control systems of active filters for industrial power line 狄利克雷核在工业电力线有源滤波器控制系统中的应用
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552048
V. Zamaruiev
{"title":"The use of the dirichlet kernel in the control systems of active filters for industrial power line","authors":"V. Zamaruiev","doi":"10.1109/ELNANO.2013.6552048","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552048","url":null,"abstract":"Optimization of power converter topologies for power factor converters, active filters, active rectifiers etc. requires dividing converter's output signal spectrum between several power modules. These include the need to harmonize the frequency and phase responses and to synchronize input and output signals of several filters that process the same signal on different frequency intervals, on the boundary of their bandwidth in real time. The transfer of well known solutions for the digital filter synthesis from the field of radio, audio and other signal processing to the control systems of power converters faces several challenges. The article discusses the construction of a digital filter using the Dirichlet kernel that eliminates these problems.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130236661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Information-theoretic estimates of communication and processing in nanoscale and quantum optoelectronic systems 纳米级和量子光电系统中通信和处理的信息理论估计
2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI: 10.1109/ELNANO.2013.6552059
S. Lyshevski, L. Reznik
{"title":"Information-theoretic estimates of communication and processing in nanoscale and quantum optoelectronic systems","authors":"S. Lyshevski, L. Reznik","doi":"10.1109/ELNANO.2013.6552059","DOIUrl":"https://doi.org/10.1109/ELNANO.2013.6552059","url":null,"abstract":"This paper applies information theory to examine communication and processing in nanoscale and quantum optoelectronic systems. Classical, semiclassical and quantum information-theoretic analyses and measures are proposed and examined. The reported results and new findings enable practical technological solutions supported by nanoscaled microelectronics and optoelectronics. Our results may advance communication and processing schemes. We contribute to areas of a critical importance and significance, such as communication, data processing, biotechnology, neurophotonics, photonics, etc.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"os-27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127773589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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