Functional film peculiarities of the «metal-insulator-metal» structure devices

The important parts of material science in the film preparation fields and sol-gel technology are presented. Al2O3/SiO2 and ZrO2/Y2O3 films have been prepared by electrophoresis deposition of organometallic compounds as dielectric coatings on metal substrates and annealed at different temperatures. The films were characterized by X-ray diffraction (XRD), atomic force and scanning microscopy (AFM) and (SEM) respectively. The surface grains appeared to get larger in size and the root mean square roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The properties dependence of the film's chemical composition, impurities and microstructure, which are closely correlated with the deposition technique and conditions were investigated. A short analysis of sol-gel technology and thin film preparation methods of dielectric materials has been given.