LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics最新文献

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Development Of High Resolution Reactive Ion Etching Of II-VI Semiconductors Using CH4/H2 利用CH4/H2制备II-VI半导体的高分辨率反应离子刻蚀研究
M. Foad, C. Dunscomb, R. Williams, C. Wilkinson
{"title":"Development Of High Resolution Reactive Ion Etching Of II-VI Semiconductors Using CH4/H2","authors":"M. Foad, C. Dunscomb, R. Williams, C. Wilkinson","doi":"10.1109/LEOSST.1991.639023","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639023","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115230764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron Beam Assisted MOCVD For Quantum Wires And Boxes 电子束辅助的量子线盒MOCVD
Y. Arakawa
{"title":"Electron Beam Assisted MOCVD For Quantum Wires And Boxes","authors":"Y. Arakawa","doi":"10.1109/LEOSST.1991.638916","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638916","url":null,"abstract":"Mesoscopic and/or quantum microstructures have recently received great attentions, since new physical phenomena with applications to semiconductor lasers and other functional optical devices are expected[ 1,2]. To fabricate this quantum microstructures, use of wet chemical etchings[3], reactive ion etchings[4], ion beam implantaions[5] and ion beam millings[6,7] have been investigated. These methods, however, suffer from free surface effects, creation of a damage field during implantation. To avoid these problems, selective growth techniques on masked substrates[8,9] and nonplanar substrates[ 10-121 have been also investigated. In particular, use of both metal-organic chemical vapor deposition (MOCVD) selective growth technique and electron beam (EB) lithography technique would play important roles. In this paper, we discuss fabrication technologies for quantum wires and quantum boxes with emphasis on these electron-beam assisted M O O technologies.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical And Structural Characterization Of Gaas Vertical-sidewall Layers Grown By Atomic Layer Epitaxy 原子层外延生长的砷化镓垂直侧壁层的电学和结构表征
D. Gladden, C.A. Wang, W. Goodhue, G. A. Lincoln
{"title":"Electrical And Structural Characterization Of Gaas Vertical-sidewall Layers Grown By Atomic Layer Epitaxy","authors":"D. Gladden, C.A. Wang, W. Goodhue, G. A. Lincoln","doi":"10.1109/leosst.1991.638945","DOIUrl":"https://doi.org/10.1109/leosst.1991.638945","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116589100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystalline Organic Semiconductor Thin Films Grown By Organic Molecular Beam Disposition: A New Class Of Engineered Materials For Optoelectronics 有机分子束配置生长的晶体有机半导体薄膜:一类新的光电子工程材料
F. So, S. Forrest, D. Zang
{"title":"Crystalline Organic Semiconductor Thin Films Grown By Organic Molecular Beam Disposition: A New Class Of Engineered Materials For Optoelectronics","authors":"F. So, S. Forrest, D. Zang","doi":"10.1109/LEOSST.1991.638919","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638919","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121946756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microfabrication For Photonics And Optoelectronics 光子学和光电子学的微加工
{"title":"Microfabrication For Photonics And Optoelectronics","authors":"","doi":"10.1109/LEOSST.1991.638980","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638980","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130650929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion Beam Machining Of Optoelectronic Components 光电元件的离子束加工
A. Scherer, J. Soole, H. Lee, E. Beebe, M. Orenstein, R. Bhat
{"title":"Ion Beam Machining Of Optoelectronic Components","authors":"A. Scherer, J. Soole, H. Lee, E. Beebe, M. Orenstein, R. Bhat","doi":"10.1109/LEOSST.1991.638986","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638986","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129502465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technology And Optical Properties Of Semiconductor Quantum Wires 半导体量子线的技术与光学特性
A. Forchel
{"title":"Technology And Optical Properties Of Semiconductor Quantum Wires","authors":"A. Forchel","doi":"10.1109/LEOSST.1991.639033","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639033","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130871180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Review Of Unstable Resonator Diode Laser Fabrication Using FIBM And RIE 利用FIBM和RIE制备不稳定谐振腔二极管激光器综述
C. Largent, C. Moeller, D. Depatie, R. Defreez, J. Cser, J. Yang, M. Jansen, D. Gallant, M. Tilton, G. Dente
{"title":"A Review Of Unstable Resonator Diode Laser Fabrication Using FIBM And RIE","authors":"C. Largent, C. Moeller, D. Depatie, R. Defreez, J. Cser, J. Yang, M. Jansen, D. Gallant, M. Tilton, G. Dente","doi":"10.1109/LEOSST.1991.639012","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639012","url":null,"abstract":"We have demonstrated that lateral mode control in broad area semiconductor lasers operated at high power levels can be achieved by employing on-the-chip unstable resonators. Critical to the performance of the finished device is the precise fabrication of a smooth, vertical, curved resonator mirror. In this paper, we report the fabrication of these curved mirrors using both focused-ion-beam micromachining (FIBM) and reactive ion etching (RIE). The first method we employed to make curved facets was FIBM. Building upon previous work that used the focused-ion-beam to micromachine optical quality surfaces in semiconductor laser materials1p2, we employed this technique to micromachine a curved facet at the end of a laser cavity3. This curved facet defined one end of a half-symmetric unstable resonator cavity (Fig. 1). rSiOz defined ,Metallization Gaia Section","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122868198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microscope Metrology With Balanced Illumination 平衡照明的显微镜计量
P. Everett, W. Goltsos
{"title":"Microscope Metrology With Balanced Illumination","authors":"P. Everett, W. Goltsos","doi":"10.1109/LEOSST.1991.638996","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638996","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126069677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial Materials and In-situ Processing For Optoelectronic Devices 光电器件外延材料与原位加工
{"title":"Epitaxial Materials and In-situ Processing For Optoelectronic Devices","authors":"","doi":"10.1109/LEOSST.1991.638913","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638913","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127468451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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