LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics最新文献

{"title":"High Reflectivity, 1.55/spl mu/m InP/lnGaAsP Surface-emitting-laser Mirror Grown By Chemical Beam Epitaxy","authors":"F. Choa, K. Tai, W. T. Tsang, S. Chu","doi":"10.1109/LEOSST.1991.638925","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638925","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129336955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible And Rigid Masks And Alignment In Binary Optics","authors":"P. Everett, W. Delaney, M. Griswold","doi":"10.1109/LEOSST.1991.638995","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638995","url":null,"abstract":"Background. Contact lithography achieves submicron resolution with lower capital cost than projection lithography. A gap of 1 pm during exposure will degrade resolution. Traditionally masks are rigid, between 1.5 and 3-mm thick, and flat k 2 pm. The near-perfect contact needed at all points is more likely if either mask or substrate flexes. An intermediary flex mask should be considered if the substrate is too thick to flex, or if a number of devices are to be produced, since ri id masks","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114679027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Image Potentials And Dry Etch Directionality In Integrated Optoelectronics","authors":"R. J. Davis, S. Tiwari","doi":"10.1109/LEOSST.1991.639003","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639003","url":null,"abstract":"Etch directionality is critical to integrated optoelectronic devices which use etching to form structures such as laser mirror facets, waveguides, and gratings. As a result, ion-assisted processes such as reactive ion etching (RIE) and chemically assisted ion beam etching (CAIBE) are often utilized for their high degree of directionality. Since ion damage is a major concern, ion energies in these processes must be kept low, and electron cyclotron resonance (ECR) ion sources are now being used to lower ion energies to tens of eV and less. Recently, it was shown' that the image potential between an ion and an etched sidewall is an important effect in the dry etching of deep submicron trenches with low energy ions. Image potentials attract ions toward etched walls resulting in ion-wall collision rates which increase with decreasing ion energy. Ion-wall collisions, in turn, can lead to scattered ion trajectories within the trench, and in the case of highly reactive chemistries can also result in wall etching and slow vertical etch rates at the trench bottom. Here, we will discuss the importance of ion-wall image potentials as they apply to the fabrication of integrated optoelectronic devices in Ill-V materials systems. For a conducting wall located at E I 0, the lateral equation of motion for an ion of charge q, is where rn, is the ion mass. Ions will be accelerated toward the wall until they are neutralized, typically by Auger processes at distances of 1 nm from the wall. This approximation ignores geometric effects near the top and bottom of the etched wall. Image effects will also be present for dielectrics but will be reduced by a factor ( E l)/(~ 41). Ion trajectories were integrated by a simple computer program. The collision depth z = zc of singly-charged ions versus initial distance to from the wall is shown in Fig. 1. The flux on the wall, which is","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125303832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Future Prospects Of Beam Epitaxies For Optoelectronics","authors":"W. Tsang","doi":"10.1109/LEOSST.1991.638917","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638917","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125330892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gas Source MBE For InGaAs/lnGaAsP MQW Lasers And InGaAsP/lnAiAs Superlattice APD's","authors":"H. Iwamura, T. Kagawa","doi":"10.1109/LEOSST.1991.638942","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638942","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129941706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mass-transport Fabrication Of Efficient Microlenses, Mirrors, Gratings And Monolithic Integrated Diode Lasers","authors":"Z. Liau","doi":"10.1109/LEOSST.1991.639014","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639014","url":null,"abstract":"Gratings and Monolithic Integrated Diode Lasers Z.L. Liau Lincoln Laboyatory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-9108 Recent interest. in o toelectronic integrated circuits has posed considerable challenges for compound semiconductor surfaces have shown considerable PO entia1 as a relative!y simple rocess capable of formin high-quality micro-optical structures, and low-threlyhold high-speed Pasers suitable for monoli 6 IC integration . In this paper, progress in this area is reviewed with em hasis on accurate fabrication control and on the prevention of material degradation due to the","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"302 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132055655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Application Of In-situ Laser Reflectometry To MOCVD Growth","authors":"S. Hummel, N. Frateschi, P. Dapkus","doi":"10.1109/LEOSST.1991.638949","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638949","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131867242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain Compensated Strained Layer Superlattices For 1.5 Micron Wavelength Lasers","authors":"B. Miller, U. Koren, M. Young, M. Chien","doi":"10.1109/LEOSST.1991.638921","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638921","url":null,"abstract":"Strained layer multiple quantum well (SL-MQW) lasers with excellent performance characteristics such as low threshold currents and high output powers and quantum efficiencies have been demonstrated [ 1,21 for the 1.5 pm wavelength range. These lasers employ a stack of several very thin InGaAs QWs with large compressive strain ranging from 0.65% to 1.7 % surrounded by thicker (tD200 A) barriers of lattice matched InGaAsP. A typical structure employed by the present authors for photonic integrated circuits( PIC'S) is shown in Fig. 1, where the SL-MQW section is on top of the waveguide and is composed of eight 27A In0.77Gaods wells and 108Hi InGaAsP (Eg4.95 ev) barriers[3]. The MQW wafers were grown by atmospheric M O V E on 2\" dia InP substrates. Good reliability has been obtained for SL-MQW lasers but as the MQW stack thickness approaches some critical value, the total strain accumulates and the critical thickness for the superlattice stack can be approached. Relaxation due to misfit dislocations and other defects will occur and will adversely effect the photoluminescence (PL) linewidth and laser performance For InO.nGa0.As. (compressive strain = 1.5%) we estimate the critical thickness to be about 1 2 d , which can accommodate only 45 3OA QWs. We find that for PICcircuitsincludingsuchconfigurationsas hort cavity lasersor distributed Braggreflector @BR) lasers, a larger number of QWs (up to 8)may be required for optimal performance. In such circumstances an insignificant compressional strain in the barriers can deteriorate the PL linewidth and intensity, yet by intentionally introducing an opposite (tensile) strain into the barriers it is possible to compensate for the strain in the MQWs. In this way we find that the strain compensated strained layer (SCSL) MQW superlattice is less sensitive to the increase in the number of QWs. The net strain in the MQWs can be determined by analyzingthe Kua 14001 X-ray double diffraction rocking curves of the as-grown wafers. Although the x-ray spectra is complex it can easily be unraveled by using selective etching. Thisis shown in Fi. 2 where rocking curves are taken before and after selectively etching away the MQW, and Q (1.3) sections. of atypical PIC wafer(see Fig 1). The zero of the satellite peaks due to the MQWs gives the net strain of the QW stack and their period gives the thickness of the well+barrier. With an independent determination of the layer thickness and barrier strain, it is possible to determine the strain in the wells and barriers. The barrier strain can be determined from the Q(1.3) peak coming from the waveguide layer (where the waveguide and barrier have the same composition). This net strain determines PL, and laser quality. To see this we examine Fig 3 where the rocking curves are compared for an uncompensated and compensated SLMQW wafers. In Fq. 3a the center of the satellite peak shows a compression of 1200\". Here no attempt was made to compensate and in this case the barriers are u","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132105039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Plasma Etching Process Module For Fabrication Of High Frequency Buried Heterostructure Lasers","authors":"E. Meland, R. Holmstrom","doi":"10.1109/LEOSST.1991.639000","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639000","url":null,"abstract":"Record performance high frequency (3 dB bandwidth = 24.5 GHz) 1.3 pm wavelength lasers have recently been reported [I]. These results are due to a new fabrication sequence which controls dimensional tolerances to 0.1 pm [2]. At the core of this sequence is an anisotropic plasma etching process which provides deep (1-3 pm) channels to form mesas with smooth, vertical sidewalls. BH lasers with narrow (0.6-1.0 p) active layers and 0.1-0.2 pm per side of lateral InP cladding have resulted. These feature sizes are responsible for the low electrical parasitics and high photon densities necessary for achieving high modulation bandwidth performance. This paper describes the plasma etching process module in detail.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123849785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MOVPE Of AiGalnP/GalnP Heterostructures For Visible Quantum Well Lasers","authors":"P. Roentgen, G. Bona, W. Heuberger, P. Unger","doi":"10.1109/LEOSST.1991.638932","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638932","url":null,"abstract":"AIGalnP/GalnP visible laser diodes are attractive candidates for various advanced optoelectronic applications. MOVPE of high quality AlGalnP/GalnP heterostructures, including precise doping, control over structural and heterointerfacial properties is a prerequisite for obtaining high performance visible laser diodes. We report on the recent results in MOVPE of separate confinement AIGalnP/GalnP quantum well heterostructure lasers. The additional introduction of strained quantum wells offers a new degree of freedom for device design and results in further improvements of laser performance.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128031493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}