LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics最新文献

{"title":"The Impact Of The Impurity Induced Layer Disordering Process On Optoelectronic Microfabrication","authors":"R. Thornton","doi":"10.1109/LEOSST.1991.639024","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639024","url":null,"abstract":"Since the phenomenon of impurity induced layer disordering was first observed some eleven years agol, it has been realized that the fabrication of electronic and optical devices could potentially be made much simpler by this process. As a result, many laboratories have conducted research in the intervening years in order to develop a more complete understanding of this process from a phenomenological and theoretical basis. Considerable progress has been made in this direction, however, conceptual issues s t i l l remain to be resolved.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123249877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanoscale Band Gap Engineering And Modulation Doping In GaAs-AiGaAs Quantum Well Structures By Focused Ion Beam","authors":"P. Petroff, Y.J. Li, Z. Xu, S. Sasa, T. Deruelle, W. Beinstingl, M. Miller","doi":"10.1109/LEOSST.1991.639029","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639029","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115265868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semi-insulating Multiple Quantum Wells As An Optical Imaging Medium","authors":"D. Nolte, Q. Wang, M. Melloch","doi":"10.1109/LEOSST.1991.638924","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638924","url":null,"abstract":"Semi-insulating quantum wells provide a unique new mechanism for controlling optically induced space-charge and saturation effects in electro-optic devices. This is achieved by spatially separating space-charge trapped in the quantum barriers from photoconductivity in the quantum wells. To demonstrate this principle, we have grown, processed and characterized photorefractive quantum-well devices that operate with the quantum-confined Franz-Keldysh effect[l,2]. A consequence of this principle for the photorefractive effect is the persistence of photorefractive gratings: the gratings generated by a visible-wavelength pump laser are not erased by a high-intensity infrared probe laser. Therefore a strong signal can be controlled by a weak control beam, which is a requirement of any efficient optical processing system. The film structure for this device was grown in a Varian GEN II molecular beam epitaxy system. The film consists of 8000 8, of AlGaAs layers which can be used as an etch stop for removal of the substrate or to perform lift-off of the eptaxial MQW structure. The MQW consists of 60 periods of 75 8, GaAs wells and 100 8, Alo.sGao.7As barriers for a total photorefractive interaction length of 1.05 pm. On top of the MQW is a 500 8, Alo.3Gao.7As cap. After film growth the MQW structure was implanted with protons of energy 160 KeV and dose 1012 cm-2. The epitaxial side of the wafer was then epoxied to a glass slide and the substrate removed. The MQW structure was now implanted with the same energy and dose of protons but from the other side to ensure that the entire MQW structure was semi-insulating. Gold contact strips of separation 1 mm were formed in order to be able to generate an electric field parallel to the quantum wells. The non-degenerate four wave mixing experiment is illustrated in Fig. 1. A helium neon laser, which can generate electron-hole-pairs (ehp) in the multilayer structure, is used to form an optical grating in the SIMQW. With an electric field applied parallel to the quantum wells, the ehp generated in the light regions will be separated and trapped in the dark regions. An optical probe beam from a Ti:sapphire laser is now diffracted from the absorption and refractive gratings caused by the stored spacecharge pattern in the SIMQW. The diffraction efficiency as a function of wavelength of the Ti:sapphire laser is shown in Fig. 2 at an applied AC field of 4 kV/cm at 290 Ht. The diffraction efficiency peaks at 8x10-5 at a wavelength of 837 nm. When the Ti:sapphire probe laser is tuned below the bandgap of the Al0.3Ga0.7As barriers, ehp are only generated in the GaAs quantum wells and will not erase the stored charge pattern in the barriers. Shown in Fig. 3 is the diffraction signal as a function of the probe intensity for two different wavelengths, 837 nm corresponding to the peak in the diffraction efficiency and 840 nm corresponding to the zero-crossing of the electroabsorption on the low-energy side of the heavy-hole exci","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126729050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In Situ Processing And Epitaxial Growth","authors":"H. Temkin","doi":"10.1109/LEOSST.1991.638946","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638946","url":null,"abstract":"We discuss in-situ processing techniques designed to allow high quality regrowth by MBE. Two directions appear very promising. One is vacuum lithography based on focused Ga-ion beams and dry etching through the native oxide masks. Substrates and structures patterned by this process are free of damage and contamination and can be successfully overgrown. Buried quantum wires as narrow as 50nm have been prepared and wires as narrow as 10nm appear within reach. The other approach is selective area epitaxy using in situ prepared ultrathin masks. The cleaning techniques developed for this process are also useful to selective growth through conventional dielectric masks. We describe InGaAs(P)/InP lasers and bipolar transistors formed selectively by MOMBE. Future directions of in-situ processing will be briefly discussed.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114066568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Formation Of Strain-induced Quantum Well Wires By Low Damage Chemical Dry Etching","authors":"I. Tan, T. Yasuda, R. Mirin, D. Lishan, V. Jayaraman, C. Prater, E. Hu, J. Bowers, J. Merz","doi":"10.1109/LEOSST.1991.639031","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639031","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114955267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GalnAsP/l Short Cavity Laser Diodes With Facet Mirrors Etched By Chlorine Gas Reactive Ion Beam Etching","authors":"M. Iwase, N. Matsumoto, A. Kasukawa","doi":"10.1109/LEOSST.1991.639013","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639013","url":null,"abstract":"Ultra low-threshold-lasers have the advantages of zero-bias modulation and reduced heat dissipation in high-packing-density components such as OEICs. Low threshold current operation can be achieved by a combination of short cavity length and highly reflective (HR) coating in a quantum well laser diode (QW LD), especially in a strained-layer (SL) QW LD1) since (SL) QW LDs provide a low transparency current and a low internal loss. Dry etching technique is the most suitable method to fabricate short cavity LDs. Using a reactive ion beam etching (RIBE), short cavity LDs were fabricated in the GaAslAlGaAs system21, however, dry etching technique has not been matured in GalnAsP/lnP system31 in terms of a formation of high quality vertical facet mirrors for short cavity LDs. In this paper, we have successfully fabricated a 18pm-long GalnAsPhP inplane LD, which is the shortest cavity length ever reported, using a single-step RIBE. We used LPE grown 1.3ym GalnAsP/lnP buried crescent (BC) laser wafers in this study. To obtain the smooth etched facets, etching mask must have the smooth edge. We prepared 10pm-thick hard baked photoresist and patterned it with various cavity lengths by a RlBE using oxigen gas. Facet etching was carried out using a RlBE apparatus which includes an ECR ion source and CI2 gas. For the etching condition, we used an acceleration voltage of 500V and a Cl2 gas pressure of 8x10-4Torr. The etch rate was approximately 150nmlmin. The total etch depth was over 1Opm. The sample holder was slanted by about 30 degrees and was spun at 12rpm to make both facets vertical at the same time. Figure 1 shows scanning electron microscope (SEM) photographs of an etched cavity laser (whole view) and an etched facet. The etched facet were vertical and the roughness is estimated to be less than 0.1ym. A minor amounts of chlorine was detected from etched facets by a micro-probe Auger electron spectroscopy measurement. In order to characterize the etched facet, the other facet of the LD was cleaved as reference. Light output power versus injection current (LA) characteristics at room temperature from etched and cleaved facets is shown in Fig.2 for a cavity length of 230pm. The threshold current was 17mA and the differential quantum efficiencies from etched and cleaved facets were 19.5% and 20.5%, respectively. The identical UI indicates that the reflectivity of etched facet is very close to the cleaved one ,0.32. To reduce the mirror loss, HR coating (90%) consisted of quarter wavelength multi-layer SiOela-Si was deposited on the rear facet. The shortest cavity length operated under pulsed condition at room temperature was 18pm, which is, to our best knowledge, the shortest cavity reported so far for inplane lasers in the GalnAsPllnP system. Figure 3 shows the UI characteristics for a 18pm-long device. Threshold current was as low as 15mA. The longitudinal mode spacing was 11.2nm, as expected from the cavity length.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123197091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular Beam Epitaxy: A Production Tool","authors":"L. T. Nuyen","doi":"10.1109/LEOSST.1991.638914","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638914","url":null,"abstract":"These devices are commercially available at reasonable price in order to be used preferentially in consumer products. We can add to these quantities a few million devices produced for in-house use or in a pre-production state. The forecast of the market of high performance and low cost GaAs devices which need MBE technology shows a consumption of about 5000-7000 4 inch wafers per week by 1995. The purpose of this paper is to describe the present status of MBE wafer production and its development in the near future.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122678260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reflectivity Measurements Of Electron Beam Written First Order Bragg Gratings On AlGaAs Rib Waveguides","authors":"F. Vasey, J. Ganiére, F. Reinhart, J. Stauffer","doi":"10.1109/LEOSST.1991.638987","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638987","url":null,"abstract":"The fine tuning of a microfabrication process is a quite laborious procedure. It often resorts to destructive evaluation techniques such as observation of a cleaved structure, and can rarely be performed on the same sample that will be used for the final device. This point is of particular importance for wavelength selective devices such as Bragg gratings, as their characteristics are closely tied to the refractive index of the medium they are integrated into, and may vary from sample to sample. We demonstrate an original device structure that permits to nondestructively characterize a first order Bragg reflector, and to iteratively or continously adapt the microfabrication parameters to its design specifications. In particular, we investigate the sensitivity of the mirror characteristics to the exposure dose used during direct writing.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128974459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Monolithic Individually Addressable Two-dimensional Surface-emitting Diode Laser Array","authors":"Mingcho Wu, Yung-Jui Chen, J. Hryniewicz, Y. Ho, D. Mergerian","doi":"10.1109/LEOSST.1991.639015","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639015","url":null,"abstract":"There has been considerable interest in semiconductor diode laser arrays in the pass few years. Most of the laser array research efforts were concentrated on high power laser output applicationsl~2,3. The addressability of two-dimensional arrays, which is very important for optical computing and optical interconnects, has not been investigated nearly as much. We report here the design and fabrication of a monolithic individuallyaddressable two-dimensional surface-emitting laser diode array, The basic element of the array consists of a two-electrode GaAdAIGaAs laser. Light output normal to the surface is obtained by forming 45 0 internal reflection mirrors4 at both ends of laser cavity using chemically assisted ion-beam etching CCAIBE).","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126778811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication Of Controlled Duty Cycle Buried Grating Distribute Feedback Lasers At /spl lambda/=1.51/spl mu/m","authors":"E. Vangieson, J. Andrews, R. Enstrom, J.R. Appert, J. Kirk, N. W. Carlson","doi":"10.1109/LEOSST.1991.638940","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638940","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133332889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}