Electron Beam Assisted MOCVD For Quantum Wires And Boxes

Y. Arakawa
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Abstract

Mesoscopic and/or quantum microstructures have recently received great attentions, since new physical phenomena with applications to semiconductor lasers and other functional optical devices are expected[ 1,2]. To fabricate this quantum microstructures, use of wet chemical etchings[3], reactive ion etchings[4], ion beam implantaions[5] and ion beam millings[6,7] have been investigated. These methods, however, suffer from free surface effects, creation of a damage field during implantation. To avoid these problems, selective growth techniques on masked substrates[8,9] and nonplanar substrates[ 10-121 have been also investigated. In particular, use of both metal-organic chemical vapor deposition (MOCVD) selective growth technique and electron beam (EB) lithography technique would play important roles. In this paper, we discuss fabrication technologies for quantum wires and quantum boxes with emphasis on these electron-beam assisted M O O technologies.
电子束辅助的量子线盒MOCVD
介观和/或量子微观结构最近受到了极大的关注,因为新的物理现象有望应用于半导体激光器和其他功能光学器件[1,2]。为了制造这种量子微结构,已经研究了使用湿化学蚀刻[3]、反应离子蚀刻[4]、离子束注入[5]和离子束铣削[6,7]。然而,这些方法受到自由表面效应的影响,在植入过程中产生损伤场。为了避免这些问题,也研究了在掩膜衬底[8,9]和非平面衬底[10-121]上的选择性生长技术。特别是,金属有机化学气相沉积(MOCVD)选择性生长技术和电子束光刻技术的使用将发挥重要作用。在本文中,我们讨论了量子线和量子盒的制造技术,重点讨论了电子束辅助M O O技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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