LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics最新文献

{"title":"Characterization Of Dry Etch Induced In Ill/V Micro-structures","authors":"R. Germann","doi":"10.1109/LEOSST.1991.639005","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639005","url":null,"abstract":"In this work an optical method is uscd, which allows the characterization of the ion beam etching (IBE) induced damage in III/V semiconductor heterostructurcs with high depth resolution and high sensitivity / I / . The partial removal of the top barrier of a singlc quantum well (SQW) layer with ion beam etching introduces non-radiative centers into the SQW layer. The intensity decay of the optical emission of the SQW compared to an untreated refcrencc sample is thercfore a sensitive measure for the created damage.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127520626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In Situ GaAs Substrate Preparation For III-V And Metal Overgrowth By Molecular Beam Epitaxy","authors":"K. Choquette, M. Hong, J. Mannaerts, R. Freund, R. Wetzel","doi":"10.1109/LEOSST.1991.638947","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638947","url":null,"abstract":"Device fabrication accomplished in an ultra-high vacuum environment offers the promise of high quality and high yield processing in addition to novel device structures. Typical fabrication steps would be the preparation of the substrate, multiple iterations of semiconductor growth, patterning, and etching, and finally metal deposition. Advantages of in situ processing include the elimination of manual handling during the various fabrication steps and avoiding contamination of surfaces before semiconductor regrowth or metalization. We discuss electron cyclotron resonance (ECR) plasma preparation of GaAs substrates and subsequent growth of epitaxial GaAs and Au by molecular beam epitaxy (1MBE). This work is accomplished in a load locked UHV integrated processing system which includes an ECR etch chamber and two solid-source MBE chambers as sketched in Figure 1. We have developed a substrate preparation technique which primarily utilizes a H2 plasma treatment, and under certain circumstances, an additional Sic14 etch. Undoped and n+ GaAs substrates, without wet etching or other chemical treatment, are mounted onto molybdenum blocks, transferred into the etch chamber, and rotated 70\" from normal incidence from the ECR source. Using a 3 magnet mirror field configuration, the substrates are treated in a H:! plasma with 10-20 sccm gas flow at 1-2x10-4 torr pressure with 100-200 watts of microwave power (2.45 GHz) for 60 minutes. The ion current density to the sample is monitored during the plasma discharge, and can be varied through pressure or power adjustments. After H2 treatment with ion current densities less than approximately 3 mA/cm2, a streaky ( 1 x 1) reflection high energy electron diffraction (RHEED) pattern is observed; for greater ion current densities a spotty pattern is obtained. In either case the diffraction pattern is bright and distinct indicating the complete removal of the native GaAs oxide. On substrates exhibiting a spotty RHEED pattern, a Sic14 plasma etch of 0.5 pm (2 sccm Sic14 flow, 1x10-3 torr, 200 watts) gives a streaky (1x1) pattern indicating a smooth surface. After plasma processing the substrates are annealed in vacuum for 40 minutes at 250°C. The RHEED pattern of a typical prepared GaAs substrate is shown in Figure 2(a). For GaAs overgrowth the samples are transferred to the 111-V MBE chamber. In an arsenic overpressure at 400\" C, secondary lines appear in the RHEED pattern indicating a reconstructed surface. The As-stablized (2x4) RHEED pattern is obtained during the growth of GaAs. To investigate the origin of the (1x1) patterns exhibited by our prepared substrates, a newly MBE grown GaAs film was subjected to a low energy (1 0-30 eV) ECR Ar plasma. The substrate then exhibited a streaky (1 x 1) pattern, even after a vacuum anneal. However in an arsenic overpressure at 400\" C, secondary lines reappeared in the RHEED pattern, and an As-stablized","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132439480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectronic Devices For Optical Data Storage","authors":"A. G. Dewey, W. Lenth, O. Vocgeli","doi":"10.1109/LEOSST.1991.638930","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638930","url":null,"abstract":"Optolectronic devices suitable for application in optical data storage must meet unique and stringent performance requirements. Scmiconductor l a w s for read-write optical disk drives must provide output powers of scveral tens of milliwatts with low amplitude noise. The laser output beam has to be dirraction-limited so that thc light can be focused to a spot of submicron dimensions on the optical disk. In addition, most of the laser parameters, particularly the optical properties havc to hc controlled within tight tolerances. In order to achieve high manufacturing uniformity in volume production, on-wafer testing and screening methods can be uscd. I3y rahricating auxiliary characterization and screening devices on the laser wafcr the critical rnatcrial and laser parameters can be measured in an automated fashion at the wafcr Icvcl.'","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"41 19","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133007554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis Of Surface Roughness On Semiconductor Laser Etched Facets","authors":"R. Herrick, L. Sabo, J. Levy","doi":"10.1109/LEOSST.1991.639011","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639011","url":null,"abstract":"Monolithic integration of opto-electronic devices requires the development of techniques to produce extremely smooth etched laser facets. Wide-stripe resonators fabricated to date have proven capable of matching the performance of conventional cleaved facet lasers’, but for some advanced photonic devices2, a further reduction of facet roughness is needed. Low surface roughness is essential to maximizing facet reflectivity, minimizing beam divergence and scattering loss, and in turning mirrors, minimizing backscatter. All of the etched facets in this study were fabricated from Metal-Organic, Chemical Vapor Deposition (MOCVD)-grown AlGaAs/GaAs graded-index, separate confinement heterostructure, singlequantum well (GRINSCH-SQW) epitaxy, with growth conditions and dimensions as reported previously3. Most devices were then masked using a 1200 8, thick nickel lift-off mask4, although a few devices used a 6000 8, thick patterned oxide mask5. The devices were etched approximately 2.2 pm after masking, using achemically-assisted ion-beam etching (CAIBE) process to produce smooth, vertical sidewalls. In all devices, the facet striations followed the imperfections in the mask itself, in agreement with earlier investigation~~. We have examined the mask edge, or the top edge of the etched facet after the mask has been removed. Previously, facet quality has either been inferred by comparing the slope efficiency of an etched-facet laser to a similar cleaved-facet laseF, or subjectively evaluated by estimating the size of sidewall striations. Our nondestructivemethod of quantitatively analyzing the surface roughness of semiconductor laser etched facets takes advantage of the “tilt adjustment” feature on the Scanning Electron Microscope (SEM) to increase the effective magnification in the axis of the roughness. The resulting SEM photo is then digitized to provide the actual facet profile6. After acquiring the facet profile, we characterize the profile for rrns roughness, and take its Fourier transform. IntheFourieranalysis,the waveform (in thiscase the facet profile), is broken into its frequency components. Figure 1 shows that the Fourier spectrum of the profile is characterized by three frequency components, which we refer to as“edgewander”(characterizedbyavery wide, 10-30pm period), “bumpiness” (characterized by a 2-5pm period), and “striations” or “surface roughness” (which covers everything smaller than 2 pm). The bumpiness, (with a 5 p period), fits 200 cycles per mm or 0.2 cycles per pm, hence the spatial frequency peak at 0.2 pm-’. Note that of the three components, only the third (“striation”) has been reported in the literature, since subjective evaluationofSEMphotosonlyshowsfeatures with heightto-width aspect ratios of approximately 1-to-1. “Striation,’’ with its distinct columnar features, is thus readily noticed. Gradual variations in the edge profile do not create similar strong “shadows” in the SEM photograph, and thus generally go unnoticed, even ","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122967221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Binary Optics \"The Optics Technology Of The Decade\"","authors":"W. Veldkamp","doi":"10.1109/LEOSST.1991.638994","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638994","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121223898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Progress In In Situ Electron-beam Lithography Of GaAs","authors":"Y. Sugimoto, K. Akita, H. Kawanishi","doi":"10.1109/LEOSST.1991.639021","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639021","url":null,"abstract":"An in situ type electron-beam (EB) lithography techniquel -3, proposed as a new process for pattern formation, is a possible candidate for the fabrication of such nanostructures as quantum wires and dots. The merits of this patterning process are that damage-free patterning can be realized, that patterning and epitaxial overgrowth are possible without exposing the wafer surface to air, and that fine patterns and fine structures can be formed. Figure 1 illustrates the procedure for both positive and negative-type in situ EB lithography. The upper part of Fig. 1 illustrates the procedure for the positive-type, The process sequence comprises five steps: (1) preparation of a clean GaAs surface by molecular beam epitaxy (MBE), ( 2 ) photo-oxidation of the surface, (3) direct patterning of the oxide by EB-induced C12 etching, (4) C12 gas etching of the GaAs surface as a pattern transfer, and ( 5 ) removal of any residual GaAs oxide layer by heating the wafer under arsenic pressure. The principle of this process is that GaAs oxide formed on a wafer surface fulfills the role of the resist film, and that the oxide can be locally removed for patterning by EB exposure under a low-pressure C12 gas atmosphere.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121690666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Etching And OMVPE Regrowth For GalnAs/lnP Quantum Wires","authors":"Y. Miyamoto, S. Arai, M. Asada","doi":"10.1109/LEOSST.1991.639030","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.639030","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121455622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ZnSe-based Blue/green Light Emitting Diodes","authors":"H. Cheng, J. M. Depuydt","doi":"10.1109/LEOSST.1991.638927","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638927","url":null,"abstract":"","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133931193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gas-source MBE Growth Of III-V Compound Semiconductors","authors":"C. Tu, H. Hou, B. Liang, T. Chin, M. Ho","doi":"10.1109/LEOSST.1991.638918","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638918","url":null,"abstract":"Gas-source molecular-beam epitaxy (GSMBE) is receiving increasing attention because it is a very versatile MBE technique that increases the capability of the conventional solid-source MBE. Because of the high overpressure of arsenic and phosphorus, solidsource MBE cannot reproducibly and controllably grow compounds with mixed group-V elements and structures containing arsenic and phosphorus in adjacent layers. GSMBE can achieve these results by using solid sources for group-I11 elements and cracking gaseous hydrides, arsine and phosphine, to generate arsenic and phosphorus species (and hydrogen). An important application of GSMBE is growing Inl-,Ga,As,,P&InP heterostructures for long-wavelength optoelectronic devices. In this talk we concentrate on the growth and applications of GaAsl_,P,/GaAs and InAsXP1-,/hP heterostructures. Such strained multiple-quantum-well structures (SMQW) allow independent control of alloy thickness and composition and provide an additional tailoring of the band structures by the built-in strain.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117207291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Custom Epitaxy - MOVPE In The Real World","authors":"M. Scott, A. W. Nelson","doi":"10.1109/LEOSST.1991.638915","DOIUrl":"https://doi.org/10.1109/LEOSST.1991.638915","url":null,"abstract":"Until most recently, the majority of businesses providing systems, circuits and devices have employed 111-V compound semiconductor structures prepared in their own laboratories. In today's world of fast moving technology, the difference between success and failure can be exceedingly fine. Companies commercialising the rapidly emerging applications of these 111-V compounds are only too aware of this. Competition for new products and market share has led to a world wide demand for cost effective epitaxial products since these are the foundation of any device, circuits or systems business. This demand has catalysed the growth of Materials Centres of Excellence to meet these needs and to provide alternative or complementary services to those on which businesses have been traditionally reliant. This presentation will review the capabilities and flexibility demanded of the service and discusses the ability of MOVPE to address these needs.","PeriodicalId":435740,"journal":{"name":"LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114934738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}