2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)最新文献_第5页

NoSQL approach for sensor data storage and retrieval 基于NoSQL的传感器数据存储与检索

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400257

M. Marinov, Georgi Georgiev, Elitsa Popova

{"title":"NoSQL approach for sensor data storage and retrieval","authors":"M. Marinov, Georgi Georgiev, Elitsa Popova","doi":"10.23919/MIPRO.2018.8400257","DOIUrl":"https://doi.org/10.23919/MIPRO.2018.8400257","url":null,"abstract":"The sensor data is heterogeneous, redundant, real-time, massive, streaming and is generated in high frequency. The increasing use of sensors leads to a rising demand on sensor data storage platforms. Appropriate data management is therefore, a key factor in making sure that the sensor data storage system becomes a reality. In this article we will focus on finding a data storage solution that is capable of storing huge amount of sensor data. The storage models in SQL and NoSQL databases are analyzed and compared, thus seeking an appropriate type of database for sensor data storage. Hypertable is identified to be the database that best suits the system requirements. It is therefore investigated how to implement the sensor data insertion and retrieval services. Query processing over distributed databases is more challenging than doing so in a centralized environment. Because NoSQL databases do not work with SQL, they require manual query programming which can be fast for simple tasks but time-consuming for others. This paper considers the extension of Hypertable query language with aggregate operations and describes the implementation of the query language interpreter.","PeriodicalId":431110,"journal":{"name":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123172896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Comparison of garbage collectors in Java programming language Java编程语言中垃圾回收器的比较

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400277

H. Grgic, B. Mihaljević, Aleksander Radovan

{"title":"Comparison of garbage collectors in Java programming language","authors":"H. Grgic, B. Mihaljević, Aleksander Radovan","doi":"10.23919/MIPRO.2018.8400277","DOIUrl":"https://doi.org/10.23919/MIPRO.2018.8400277","url":null,"abstract":"Considering the need for continuous and uninterrupted service of modern software applications, it is valuable to analyze how garbage collection (GC) algorithms are handling memory challenges. Widely adopted general-purpose programming languages, like Java, represent an inevitable foundation for many modern application developments. In Java Platform, Standard Edition, and accompanying Java Virtual Machine (JVM), several GCs could be used. In the latest version 9.0.1 of Java SE Development Kit (JDK) default GC was changed to Garbage-First (G1) GC, now becoming widely adopted in addition to previously used Parallel GC and Concurrent Mark & Sweep (CMS) GC. Since GC is a vital part of the JVM, changes and upgrades to its implementation, which reflect upon performance results, are properties worth exploring. Using benchmarks to create non-trivial memory pressures, and with extensive data monitoring, this paper analyzes insights gathered about critical performance factors across several GC algorithms. With the evaluation of benchmark elements, such as object allocations from young area to old area and the duration of the collection time, it was possible to compare GC behavior and assess the overall memory management. This paper presents our preliminary research performed in an academic environment on several benchmark cases and our conclusion about it.","PeriodicalId":431110,"journal":{"name":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121220612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001) 硅基虚拟衬底上c6h8o7处理和H、cl钝化的ge - mos电容性能(001)

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400005

L. Hänel, Y. Elogail, D. Schwarz, I. Fischer, J. Schulze

{"title":"Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001)","authors":"L. Hänel, Y. Elogail, D. Schwarz, I. Fischer, J. Schulze","doi":"10.23919/MIPRO.2018.8400005","DOIUrl":"https://doi.org/10.23919/MIPRO.2018.8400005","url":null,"abstract":"As Moore's law is approaching its physical limitations, transistor concepts besides the classical Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) have been invented. The Tunneling FET (TFET) is a promising candidate due to the theoretically predicted subthreshold swing below 60 mV/dec of this device concept. However, Si is not the substrate of choice for TFETs — the carrier mobility and the resulting on-currents are too low. Therefore, Germanium (Ge) is suggested as active material for p-channel TFET (p-TFET) as compound III/V-materials are suggested as n-TFET active material with a high-k material as Gate oxide. This development entails new issues in the manufacturing process. That is because the Ge/high-k-interface is not of natural high quality as the Si/SiO2-interface, causing the Gate-MOS-capacitance to be the critical part of the TFET. New cleaning and passivation methods for the Ge surface are necessary. Nevertheless, Si will remain the substrate material of choice, what requires co-integration of those materials on Si. As a first attempt, we show Ge-MOS-capacitors with Al2O3 as Gate Oxide on Ge-Virtual-Substrate on Si(001) of good performance with hysteresis down to 0.6 V. We propose a combination of conventional and unconventional cleaning steps such as H2O2 and C6H8O7 (Citric Acid) followed by H- and Cl-passivation. The discussed data are corrected for series resistance and — when possible — for parasitic capacitances that can be used as indicators for cleaning and passivation efficiencies.","PeriodicalId":431110,"journal":{"name":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125217550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Students' preferences regarding the transfer of information and knowledge through infographics tools 学生对通过信息图表工具传递信息和知识的偏好

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400109

Anita Papic, S. Susilovic

引用次数: 1

Analysis of tunable BVCEO in horizontal current bipolar transistor with floating field plates 浮动场板水平电流双极晶体管可调谐BVCEO分析

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400013

M. Koričić, J. Žilak, Željko Osrečki, T. Suligoj

引用次数: 0

Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions 具有双侧超结漂移区的深沟LDMOS的仿真研究

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400011

J. J. Cheng, P. Li, W. Chen, B. Yi, X. B. Chen

{"title":"Simulation study of a deep-trench LDMOS with bilateral super-junction drift regions","authors":"J. J. Cheng, P. Li, W. Chen, B. Yi, X. B. Chen","doi":"10.23919/MIPRO.2018.8400011","DOIUrl":"https://doi.org/10.23919/MIPRO.2018.8400011","url":null,"abstract":"An improved structure of the Deep-Trench Lateral Double-diffused Metal-Oxide-Semiconductor transistor (DT-LDMOS) is proposed and studied. The most improvement is that a well-known concept of super-junction is simultaneously applied to the bilateral drift regions beside the deep-trench. Thus, in comparison with the conventional device, the Figure of Merit (FOM, which equals BV 2/Ron, sp) of the proposed one is increased by about 35.6%, which means a significant reduction of conduction loss is achieved. Another improvement is that the device substrate is changed from silicon-on-insulator to ordinary bulk silicon. Therefore, the highest lattice temperature in a heat dissipation test is reduced from about 373 K for the conventional device to about 312 K for the proposed one, which means a better heat dissipation performance is obtained. All in all, the proposed device not only attains a remarkable improvement in electric characteristics, but also possesses an enhanced reliability. It is believed to be a promising device for the monolithic power ICs with enhanced performance.","PeriodicalId":431110,"journal":{"name":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124690175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Interoperability of ECG standards 心电图标准的互操作性

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400061

D. Stamenov, M. Gusev, G. Armenski

{"title":"Interoperability of ECG standards","authors":"D. Stamenov, M. Gusev, G. Armenski","doi":"10.23919/MIPRO.2018.8400061","DOIUrl":"https://doi.org/10.23919/MIPRO.2018.8400061","url":null,"abstract":"The increased demand for interoperability of electronic health records leads to the need for establishing reliable standards for storing and retrieving electrocardiogram data. Multiple medical record data standards were created in response to medical organization initiatives, based on binary and XML formats. These standards raise the need to maximize interoperability between systems that share ECG datasets. HL7 aECG, SCP-ECG, DICOM, and ISHNE are among the most popular ECG standards, which are compared within this paper. We have implemented an adapter system — ECGConvert, which provides interoperability on raw ECG to HL7 aECG and SCP-ECG, while also supporting ISHNE format to HL7 aECG conversion. We provide a discussion for the interoperability of these standards in the healthcare, the problems we have faced and solution to improve the process of sharing ECG datasets between organizations. Our interoperability platform can support the wearable ECG devices that provide single-channel ECG streaming data. The metadata raw ECG record can be converted to any of currently used ECG standards by the built prototype.","PeriodicalId":431110,"journal":{"name":"2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125354759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Comparison between relational and NOSQL databases 关系型数据库和NOSQL数据库的比较

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400041

Kosovare Sahatqija, Jaumin Ajdari, Xhemal Zenuni, Bujar Raufi, F. Ismaili

引用次数: 39

Simulation based business processes analysis in higher education institutions 基于仿真的高等教育机构业务流程分析

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8400229

V. Bosilj-Vuksic, Katarina Tomičić-Pupek, M. P. Bach

引用次数: 4

Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions 利用分子束外延在硅上生长超浅pn结的薄硼层的表征

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI: 10.23919/MIPRO.2018.8399821

A. Elsayed, J. Schulze

引用次数: 4