利用分子束外延在硅上生长超浅pn结的薄硼层的表征

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Pub Date : 2018-05-21 DOI:10.23919/MIPRO.2018.8399821

A. Elsayed, J. Schulze

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引用次数: 4

摘要

利用分子束外延技术在硅(100)上沉积超薄层硼，形成高阻断的pn结。生长温度和厚度的研究范围为500°C至700°C和3nm至5nm。用这些层实现的二极管具有高理想性、低串联电阻和高反向阻塞能力，并讨论了这些层在实现绝缘栅双极晶体管中的应用。

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Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions

Ultra-thin layers of Boron deposited on Silicon (100) by means of Molecular Beam Epitaxy are utilized to form highly blocking pn-junctions. Growth temperatures and thicknesses are investigated ranging 500°C to 700°C and 3nm to 5nm. Diodes realized with these layers display high ideality, low series resistance and high reverse blocking ability The consequent usage of these layers for realization of Insulated Gate Bipolar Transistors is also discussed.

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来源期刊

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

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