Solid State Communications最新文献

{"title":"An alkali and rare earth metal mixed cyanurate KLa2(C3N3O3)2Cl with large birefringence: Synthesis and characterization","authors":"Nengxuan Wang ,&nbsp;Xinyuan Zhang ,&nbsp;Fei Liang ,&nbsp;Zhanggui Hu ,&nbsp;Yicheng Wu","doi":"10.1016/j.ssc.2025.115871","DOIUrl":"10.1016/j.ssc.2025.115871","url":null,"abstract":"<div><div>The indispensable and significant uses of optoelectronic functional materials in many sectors, including high-precision micro-processing, optical communications, and information storage, have garnered increasing attention. Combining alkali and rare-earth metals with π-conjugated (C₃N₃O₃)^3- groups can achieve large birefringence and short cut-off edges. A metal cyanurate, KLa₂(C₃N₃O₃)₂Cl (KLCYC), has been successfully synthesized in the high-temperature condition. It crystallizes in the Hexagonal <em>P</em>6₃/m space group and features two-dimensional layers composed of (C₃N₃O₃)^3- and [LaO₆Cl] polyhedral. KLCYC exhibits significant birefringence (Δ<em>n</em>_cal = 0.316 at 1064 nm) and a wide band gap (<em>E</em>_<em>g</em>) around 5.0 eV. Theoretical calculations reveal that the optical properties are mainly due to planar π-conjugated (C₃N₃O₃)^3- groups.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115871"},"PeriodicalIF":2.1,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143379044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical and photo-sensing properties of n-ZnO/p-Si(111) heterojunction and persistent conductivity","authors":"K.J. Abhishek,&nbsp;Umananda M. Bhatta","doi":"10.1016/j.ssc.2025.115862","DOIUrl":"10.1016/j.ssc.2025.115862","url":null,"abstract":"<div><div>Zinc thin films were first deposited on Si(111) substrate using DC Magnetron sputtering followed by oxidation at 800 °C to obtain <em>n</em>-ZnO/<em>p</em>-si(111) heterojunction. Formation of ZnO thin film on top of Si(111) substrate was confirmed by X-ray Diffraction. Current-Voltage (IV) characteristics taken in the dark indicated the formation of a p-n junction. Transient photo-conductivity and switching property of the heterojunction was tested for various incident radiations such as infrared (IR), Ultraviolet-A (UVA) and green radiations in the reverse bias condition. The heterojunction showed a good photo-response, especially for UV and IR radiation (sensitivity of 13.96 and 14.3 respectively). On switching off the radiation, persistent conductivity was observed, especially in the case of UV radiation.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115862"},"PeriodicalIF":2.1,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143379043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unraveling the properties of AlSnX3(X=I, Br, Cl) perovskites: A DFT study on optoelectronic and thermoelectric performance","authors":"Mohamed Hassoun ,&nbsp;Abdelwafi Degdagui ,&nbsp;Hatim Baida ,&nbsp;Abderrahman El Kharrim ,&nbsp;Adil Marjaoui ,&nbsp;Mustapha El Hadri ,&nbsp;Farid Ben Abdelouahab ,&nbsp;Mohamed Zanouni","doi":"10.1016/j.ssc.2025.115851","DOIUrl":"10.1016/j.ssc.2025.115851","url":null,"abstract":"<div><div>This study employs density functional theory (DFT) to examine the electronic, structural, thermoelectric, and optical properties of AlSnX₃ compounds, where X represents the halides iodine (I), bromine (Br), and chlorine (Cl). All materials exhibit indirect bandgaps, with calculated PBE bandgap energies of 1.08<!--> <!-->eV, 1.12<!--> <!-->eV, and 1.32<!--> <!-->eV for AlSnI₃, AlSnBr₃, and AlSnCl₃, respectively. Incorporating spin–orbit coupling (SOC) refines these values to 0.95<!--> <!-->eV, 1.08<!--> <!-->eV, and 1.29<!--> <!-->eV. The hybrid functional approach (HSE+SOC) further enhances the bandgap predictions to 1.32<!--> <!-->eV, 1.43<!--> <!-->eV, and 1.52<!--> <!-->eV, illustrating the computational method’s impact on electronic property accuracy.</div><div>The results highlight the potential of these materials for optoelectronic and solar cell applications. Optical analysis reveals strong light absorption, particularly in AlSnI₃, which benefits from a favorable dielectric function and bandgap. Thermoelectric studies indicate promising energy conversion efficiency, with AlSnCl₃ exhibiting notable thermoelectric performance at elevated temperatures.</div><div>Mechanical stability, verified through the Born–Huang criteria, confirms the robustness of these compounds. Elastic property analysis, including bulk and shear moduli, underscores their high resistance to pressure and shear forces. Among the studied materials, AlSnCl₃ displays the highest bulk modulus, reflecting superior pressure resistance. Additionally, favorable Pugh’s ratios highlight the ductility of these materials, supporting their viability for practical applications.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115851"},"PeriodicalIF":2.1,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"X-ray absorption near edge structure of bulk and two-dimensional Na2Po: A testbed for scientific research","authors":"M.J. Emmanuel Allan ,&nbsp;M. Hariharan ,&nbsp;S. Chellaiya Thomas Rueshwin ,&nbsp;G. Sneha ,&nbsp;A. Vijay ,&nbsp;G. Thamizharasan ,&nbsp;R.J. Gadha ,&nbsp;Aryan Vats ,&nbsp;M. Swetha ,&nbsp;Pandit Aditya Rajnikant ,&nbsp;R.D. Eithiraj","doi":"10.1016/j.ssc.2025.115861","DOIUrl":"10.1016/j.ssc.2025.115861","url":null,"abstract":"<div><div>Disodium Polonide in its two-dimensional phases are well-examined and have exceptional structural, electronic, vibrational, optical and thermoelectric properties. Utilizing WIEN2k DFT simulation software the ground state attributes of 1T and 1H phases of Na₂Po are computed and in both the phases it possesses structural and vibrational stability. Additionally, the thermal stability of 1T and 1H phases of Na₂Po was carried out by Ab- Initio molecular dynamics (AIMD) in the NVT ensemble for 3 different temperatures 300 K, 600 K and 1000 K up to 3ps with a time step of 1 fs. Both 1T and 1H phases of Na₂Po are thermally stable. Moreover, 1T and 1H-Na₂Po may have profound UV protectant and UV photodetectors that are briefly studied through their optical responses. The thermoelectric properties were carried out with BoltzTraP code for both phases. The figure of merit (ZT) at 300K of 1T-Na₂Po and 1H-Na₂Po is found to be 0.756 and 0.640, respectively. Hence, 1T-Na₂Po is more suitable than 1H-Na₂Po to design a waste heat recovery system. The XANES calculation was performed for Po L_III edge of both 3D and 2D (1T and 1H) phases of Na₂Po.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115861"},"PeriodicalIF":2.1,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of magnetocaloric effect of Dy2Ru2O7 at cryogenic temperature","authors":"Subrata Das ,&nbsp;Tirthankar Chakraborty","doi":"10.1016/j.ssc.2025.115853","DOIUrl":"10.1016/j.ssc.2025.115853","url":null,"abstract":"<div><div>In this study, we report on the preparation and magnetocaloric properties of Dy₂Ru₂O<span><math><msub><mrow></mrow><mrow><mn>7</mn></mrow></msub></math></span>. Our investigation reveals that the system exhibits crucial characteristics for becoming a promising magnetocaloric material at low temperatures, including significantly high saturation magnetization. The magnetocaloric effect at low temperatures is substantially large, with a magnetic entropy change (<span><math><mrow><mi>Δ</mi><mi>S</mi></mrow></math></span>) of 10.15 J Kg⁻¹ K⁻¹ for a field change of 20 kOe at 4 K, reaching a maximum of 15.08 J Kg⁻¹ K⁻¹ for a field change of 70 kOe at 6 K. Additionally, the material is expected to demonstrate strong efficiency across a broad temperature range of at least 10 K. These findings suggest that Dy₂Ru₂O<span><math><msub><mrow></mrow><mrow><mn>7</mn></mrow></msub></math></span> is an excellent candidate for low-temperature magnetic refrigeration, particularly suitable for applications near cryogenic temperatures, including liquid helium temperature.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115853"},"PeriodicalIF":2.1,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial optimization and enhancement of electrical properties of Ti-doped ZrO2 gate dielectric films prepared by the sol-gel method","authors":"Chaozhong Guo ,&nbsp;Kamale Tuokedaerhan ,&nbsp;Zhenhua Huang ,&nbsp;Zhengang Cai ,&nbsp;Margulan Ibraimov ,&nbsp;Serikbek Sailanbek","doi":"10.1016/j.ssc.2025.115860","DOIUrl":"10.1016/j.ssc.2025.115860","url":null,"abstract":"<div><div>As the conventional gate dielectric material <span><math><mrow><mtext>Si</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> is no longer sufficient for metal-oxide-semiconductor (MOS) electronic devices, the replacement of <span><math><mrow><mtext>Si</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> with high-k material <span><math><mrow><mtext>Zr</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> has proven to be an effective strategy for further reducing device feature size. In this study, we optimized the crystallization temperature, dielectric constant, and interfacial quality of <span><math><mrow><mtext>Zr</mtext><msub><mi>O</mi><mn>2</mn></msub></mrow></math></span> thin films by exploring the appropriate Ti doping concentration. This approach addresses the issue of large leakage current in MOS capacitor applications. To easily adjust the Ti content and reduce the cost, <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span> thin films with varying Ti concentrations were deposited on Si substrates using a sol-gel method. The effects of different Ti doping concentrations on the structural, optical, interfacial chemical, and electrical properties of the <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span> films were systematically evaluated using various characterization techniques. The results indicate that the ZTO-12 sample exhibits an excellent dielectric constant (36.5), a large conduction band offset (2.86 eV), a small hysteresis (0.05 V), and a low leakage current density (<span><math><mrow><mn>9.2</mn><mo>×</mo><msup><mn>10</mn><mrow><mo>−</mo><mn>5</mn></mrow></msup><mspace></mspace><mi>A</mi><mo>/</mo><msup><mtext>cm</mtext><mn>2</mn></msup></mrow></math></span>). Additionally, the leakage current conduction mechanism of the Al/ <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span>/Si capacitor was analyzed, which mainly includes ohmic conduction, Schottky emission, and Poole-Frenkel emission. In summary, the optimal Ti doping concentration is 12 %, at which point the <span><math><mrow><mtext>ZrTi</mtext><msub><mi>O</mi><mi>x</mi></msub></mrow></math></span> films exhibit excellent integrated properties. These findings will provide new insights for enhancing the performance of high-k materials in MOS electronic devices.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115860"},"PeriodicalIF":2.1,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and optical investigations of lithium-modified lead bismuth borate glasses","authors":"Divya Yadav ,&nbsp;Rajni Bala ,&nbsp;Sumit Chauhan ,&nbsp;Sanjay Gaur","doi":"10.1016/j.ssc.2025.115859","DOIUrl":"10.1016/j.ssc.2025.115859","url":null,"abstract":"<div><div>Alkali-contained oxide glasses having the composition xLi₂O+20PbO+(25-x)Bi₂O₃+55B₂O₃ (where 5 ≤ x ≤ 25 mol%) were synthesized at 1423 K by melt quenching process. XRD analysis confirmed the amorphous nature of the glasses, with no crystalline peaks observed. The derived values of parameters viz. density (<em>ρ</em>), molar volume (<em>V_m</em>), crystalline volume (<em>V_c</em>), and interionic distance (<em>R_i</em>) decrease along with the Li₂O concentration. Glassy nature of prepared glasses is also confirmed by the lower value of <em>V_c</em> than <em>V_m</em>. FTIR studies indicate that the glasses are composed of [BO₄], [BO₃], [BiO₃], and [PbO₄] main structural units, and with the rise in Li₂O concentration [BO₃] units transformed into [BO₄] structural units. Optical absorption study reveals that with the increase in Li₂O concentration band gap energy (<em>E_g</em>) increases while cut-off wavelength (<em>λ_cutoff</em>), and refractive index (<em>n</em>) decrease due to a decrease in nonbridging oxygens (NBOs). The decrease in Urbach energy (<em>ΔE</em>) with increasing lithium oxide concentration suggests a reduction in defect density. The as-prepared glasses exhibit relatively high values of refractive index (2.814–2.509), optical basicity (1.187–1.063), electronic oxide ion polarizability (3.462–2.751 Å³), and metallization criterion (0.302–0.361). Thus, these glasses hold potential for applications in technologies such as memory devices, switches, and optical modulators.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"399 ","pages":"Article 115859"},"PeriodicalIF":2.1,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143420636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and optimization of an efficient 2D Dion-Jacobson perovskite/AgInSe solar cells","authors":"Ziyad Younsi ,&nbsp;Faycal Meddour ,&nbsp;Hichem Bencherif ,&nbsp;Asad Syed ,&nbsp;Meenakshi Verma ,&nbsp;Tarek Hidouri ,&nbsp;P. Sasikumar","doi":"10.1016/j.ssc.2025.115857","DOIUrl":"10.1016/j.ssc.2025.115857","url":null,"abstract":"<div><div>This study proposes an efficient design for 2D Dion-Jacobson Perovskite/Chalcopyrite solar cells, replacing the conventional toxic cadmium sulfide (CdS) electron transport layer (ETL) with a two-dimensional BDAPbBr₄ Dion-Jacobson (DJ) perovskite. Using the SCAPS-1D simulator, the performance of the proposed structure was investigated and compared to experimental results, showing excellent agreement. The findings reveal that the inclusion of the BDAPbBr₄ layer improves the open-circuit voltage (VOC) from 0.5 V in the conventional design to 0.74 V in the optimized device. Additionally, the power conversion efficiency (PCE) increases significantly from 6 % to 10.32 %. These enhancements are attributed to the reduced interface defect density, establishment of a favorable band alignment with a spike-like configuration, and improved light transmission due to the wide bandgap of the BDAPbBr₄ layer. The study further examines the impact of key parameters, including the thickness and doping concentration of the layers, temperature effects, and interface defect density, on device performance. The results underscore the importance of optimizing the ETL properties to mitigate recombination losses and enhance charge carrier extraction. Overall, this work highlights the potential of 2D DJ perovskites as an environmentally friendly and efficient alternative to CdS in Chalcopyrite solar cells, paving the way for greener photovoltaic technologies.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115857"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance 405-nm photodetector based on the defect-induced absorption in the rutile GeO2 film","authors":"Jiabao Liu ,&nbsp;Chengming Wei ,&nbsp;Cheng Yang ,&nbsp;Xinru Lan ,&nbsp;Shuiping Huang ,&nbsp;Fabi Zhang ,&nbsp;Xu Wang","doi":"10.1016/j.ssc.2025.115856","DOIUrl":"10.1016/j.ssc.2025.115856","url":null,"abstract":"<div><div>Owing to the existence of numerous defect states in the bandgap, ultra-wide bandgap oxide semiconductors (UBOSs) have been considered as promising candidates for broadband photodetections. However, the persistent photoconductivity (PPC) effect induced by the capture of minority carriers in the relaxation process results in a very slow recovery rate, which hampers the development of UBOS based broadband photodetectors. In this work, the high-quality rutile structure GeO₂ (r-GeO₂) film with an ultra-wide bandgap energy of 4.67 eV has been deposited on the quartz substrate using magnetron sputtering epitaxy technique followed by the thermal annealing process. Taking advantage of the oxygen defect absorption of the r-GeO₂ film, a 405 nm photodetector has been achieved for the first time, which exhibits the photoresponsivity of 6.92 × 10⁻³ A/W and the detection rate of 3.06 × 10⁹ Jones, respectively, under the optical power density of 0.03 mW/cm². Moreover, a fast decay time of 0.18 s measured at a bias voltage of 30 V has been confirmed for the r-GeO₂-based photodetector without the PPC effect due to the recombination of non-equilibrium carriers mainly induced by the defect states. The proposed r-GeO₂ based broadband photodetectors enjoy high-performance, cost-effectiveness, convenience, and facile operation, providing a potential solution for broadband photodetection applications.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115856"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The boson-defined thermodynamics at the liquid-solid transition","authors":"Ulrich Köbler","doi":"10.1016/j.ssc.2025.115858","DOIUrl":"10.1016/j.ssc.2025.115858","url":null,"abstract":"<div><div>Experimental evidence from rare gas (RG) solids, Ne, Ar, Kr and Xe, shows that a boson field orders at the liquid-solid transition. Upon ordering, all bosons condense in the lowest energy state (Bose-Einstein condensation). This is the highest possible thermodynamic order and provides an entropy argument for the surprising exclusion of the interatomic van der Waals interactions from performing the liquid-solid transition. Since the ordered boson field interacts with the atomic system, it defines the observed long-range coherent order of the crystalline state. This order is more perfect than can be expected if the locally anisotropic interatomic interactions would cause the ordering transition. Boson dynamics is evidenced by the observed universal temperature dependence of heat capacity and thermal length changes, ΔL/L₀, in the critical range below the melting temperature, T_m. It is argued that the bosons are elastic quadrupole radiation. Upon ordering, boson fields confine themselves to the finite volume of a stationary unit, such as a domain or a mosaic block, and compress the ordered unit increasingly with decreasing temperature. This compression ensures the cohesion of the solids up to T_m. The low-temperature lattice parameters, therefore, are rather short and the calculated van der Waals cohesive energies are larger by a factor of ten compared to the melting temperatures, T_m. In analogy to the term magnetostriction, the thermal lattice contractions below T_m could be termed “elastostriction”.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"398 ","pages":"Article 115858"},"PeriodicalIF":2.1,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}