Solar Energy Materials and Solar Cells最新文献_第2页

Optimization of Zn alloying in non-colloidal CsZnxPb1-xI3 solar cells 非胶体CsZnxPb1-xI3太阳能电池中Zn合金化的优化

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-04 DOI: 10.1016/j.solmat.2025.113994

Abdul Mannan Majeed, Steponas Raišys, Gediminas Kreiza, Patrik Ščajev

{"title":"Optimization of Zn alloying in non-colloidal CsZnxPb1-xI3 solar cells","authors":"Abdul Mannan Majeed, Steponas Raišys, Gediminas Kreiza, Patrik Ščajev","doi":"10.1016/j.solmat.2025.113994","DOIUrl":"10.1016/j.solmat.2025.113994","url":null,"abstract":"<div><div>High-quality perovskite films are essential for developing efficient planar perovskite solar cells (PSCs). However, as-prepared perovskite films typically exhibit low crystallinity and high trap densities, leading to degraded performance in PSCs. Moreover, the challenge of creating low-toxicity, high-performance mixed Zn/Pb halide perovskite solar cells at a reduced cost remains significant. In the present work, Zinc (Zn) was introduced as a cation substitute for the toxic lead (Pb) in the CsZn<sub>x</sub>Pb<sub>1-x</sub>I<sub>3</sub> perovskite compound (x = 0.3–0.7), leveraging its non-toxic nature, oxidation resistance, and earth abundance. The structural and photovoltaic properties of Zn-alloyed Pb/Zn hybrid perovskite solar cells (PSCs) produced by a simple spin-coating process from non-colloidal precursor solution are further investigated. The results demonstrate that a heavily 45 % Zn-alloyed perovskite significantly enhances crystal quality, surface coverage, and grain size while reducing the non-radiative recombination by increasing carrier lifetime and diffusion length. These improvements led to enhanced photovoltaic performance. Specifically, the CsZn<sub>0.45</sub>Pb<sub>0.55</sub>I<sub>3</sub> solar cells demonstrated the highest performance with minimal Pb content, exhibiting an open-circuit voltage (V<sub>oc</sub>) of 1.04 V and a short-circuit current density (J<sub>sc</sub>) of 18.7 mA/cm<sup>2</sup>. The performance of the CsZn<sub>0.5</sub>Pb<sub>0.5</sub>I<sub>3</sub> solar cells was found to vary with light intensity, showing changes in efficiency, fill factor, J<sub>sc,</sub> and V<sub>oc</sub>, which were explained by variation of carrier diffusion coefficients and recombination lifetime due to trapping and recombination processes.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113994"},"PeriodicalIF":6.3,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145263156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recombination activity of chromium-gallium pairs in silicon 硅中铬镓对的复合活性

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-03 DOI: 10.1016/j.solmat.2025.113989

Sanjida Sabah , Tien T. Le , Zhuangyi Zhou , Chang Sun , Yichun Wang , Nannan Fu , Fiacre Rougieux , Daniel Macdonald , AnYao Liu

{"title":"Recombination activity of chromium-gallium pairs in silicon","authors":"Sanjida Sabah , Tien T. Le , Zhuangyi Zhou , Chang Sun , Yichun Wang , Nannan Fu , Fiacre Rougieux , Daniel Macdonald , AnYao Liu","doi":"10.1016/j.solmat.2025.113989","DOIUrl":"10.1016/j.solmat.2025.113989","url":null,"abstract":"<div><div>Understanding metallic impurities in silicon is essential for the development of silicon-based devices such as solar cells. Transition metals such as iron and chromium have been recognised as harmful impurities in silicon, particularly in p-type silicon. As the photovoltaic industry shifted from boron to gallium doping in p-type silicon, understanding the recombination behaviour of chromium-gallium (CrGa) pairs becomes crucial. This study assesses the recombination parameters of CrGa pairs in silicon using both injection-dependent lifetime spectroscopy (IDLS) and deep-level transient spectroscopy (DLTS). Customised Czochralski (Cz) silicon ingots with known amounts of intentional Cr contamination during the ingot growth process were used, with wafer resistivities varying across the range of 0.2 Ωcm – 8 Ωcm. The presence of Cr in these silicon wafers was first confirmed by monitoring the CrGa pair association and dissociation processes through lifetime-based measurements, which also confirmed the fully paired state of CrGa pairs. The CrGa concentrations in wafers were confirmed by DLTS. Through IDLS and DLTS, the following CrGa defect parameters were extracted: defect energy level <span><math><mrow><msub><mi>E</mi><mi>t</mi></msub><mo>=</mo><msub><mi>E</mi><mi>V</mi></msub><mo>+</mo><mn>0.47</mn><mspace></mspace><mi>e</mi><mi>V</mi></mrow></math></span>, electron capture cross section <span><math><mrow><msub><mi>σ</mi><mi>n</mi></msub><mo>=</mo><mn>5.1</mn><mo>×</mo><msup><mn>10</mn><mrow><mo>−</mo><mn>15</mn></mrow></msup><mspace></mspace><mi>c</mi><msup><mi>m</mi><mn>2</mn></msup></mrow></math></span> and hole capture cross section <span><math><mrow><msub><mi>σ</mi><mi>p</mi></msub><mo>=</mo><mn>1.1</mn><mo>×</mo><msup><mn>10</mn><mrow><mo>−</mo><mn>15</mn></mrow></msup><mspace></mspace><mi>c</mi><msup><mi>m</mi><mn>2</mn></msup></mrow></math></span>.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113989"},"PeriodicalIF":6.3,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High performance Rb2AgBiI6 perovskite solar cell with optimized charge transport layers for space applications 高性能Rb2AgBiI6钙钛矿太阳能电池，具有优化的电荷传输层，用于空间应用

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-02 DOI: 10.1016/j.solmat.2025.113995

Srinivas Mattaparthi , Ashutosh Srivastava , Ashish Kulkarni , Sanjay Mathur , S.K. Tripathy , Himanshu Karan

{"title":"High performance Rb2AgBiI6 perovskite solar cell with optimized charge transport layers for space applications","authors":"Srinivas Mattaparthi , Ashutosh Srivastava , Ashish Kulkarni , Sanjay Mathur , S.K. Tripathy , Himanshu Karan","doi":"10.1016/j.solmat.2025.113995","DOIUrl":"10.1016/j.solmat.2025.113995","url":null,"abstract":"<div><div>Perovskite solar cells (PSCs), both lead-based and lead-free, offer a promising energy solutions for space applications owing to their lightweight design and excellent radiation resistance. In this work, we have introduced Rb<sub>2</sub>AgBiI<sub>6</sub> lead-free double perovskite material as absorber layer due to its significant properties such as favorable band gap, superior thermal stability, less toxic nature and studied the performance of Rb<sub>2</sub>AgBiI<sub>6</sub> based PSCs under high radiation exposure. Here, WS<sub>2</sub> and Cu<sub>2</sub>O have been used as an ETL and HTL material, respectively, due to their suitable band alignment and high carrier mobility. The absorber layer parameters such as thickness, doping, defect density, interfacial effects, and electron affinity, were optimized to enhance the device performance. Additionally, device reliability has been improved by optimizing shunt resistances, temperature stability, and incident light intensity. The proposed device has attained power conversion efficiency of 29.32 % with open circuit voltage (V<sub>OC</sub>) of 1.22 V, short-circuit current density (J<sub>SC</sub>) of 27.62 mA/cm<sup>2</sup>, and fill factor (FF) of 86.93 %. Furthermore, the impact of proton irradiation on proposed PSC was investigated, with a focus on ionization energy, recoil energy losses and vacancy production rates under different proton energies using SRIM simulator. Moreover, the proposed PSC demonstrates low ionization energy, reduced vacancy production rate and minimal recoil energy loss, highlighting its potential suitability for space applications. Additionally, the J–V characteristics of proposed PSC were analysed under AM0 and AM1.5G lighting conditions, both before and after proton irradiation, showcasing its robustness and efficiency in space-relevant environments.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113995"},"PeriodicalIF":6.3,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-cost and high efficiency hydrogen evolution catalyst derived from photovoltaic solid waste 光伏固体废弃物制备的低成本高效析氢催化剂

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-02 DOI: 10.1016/j.solmat.2025.113998

Renjie Li , Xiufeng Li , Jiangfan Liao , Tao Zhou , Zhiwei Li , Panxing Gao , Fengshuo Xi , Jie Yu , Wenhui Ma

{"title":"Low-cost and high efficiency hydrogen evolution catalyst derived from photovoltaic solid waste","authors":"Renjie Li , Xiufeng Li , Jiangfan Liao , Tao Zhou , Zhiwei Li , Panxing Gao , Fengshuo Xi , Jie Yu , Wenhui Ma","doi":"10.1016/j.solmat.2025.113998","DOIUrl":"10.1016/j.solmat.2025.113998","url":null,"abstract":"<div><div>The substantial waste (∼35 %) of high-purity silicon generated as diamond wire sawing silicon waste (DSSW) during photovoltaic silicon wafer production necessitates efficient reutilization. To address this challenge, composite silicon nanomaterials were synthesized via a facile metal-assisted chemical etching (MACE) method. Comprehensive characterization (XRD, XPS, UV–Vis, SEM, HRTEM) revealed a unique visible-light-responsive porous/sheet-like heterostructure (Cu<sub>2</sub>ONPS/PSi/SiNSs). This one-step MACE process yielded a 43 % enhancement in specific surface area (37.9 m<sup>2</sup> g<sup>−1</sup> versus DSSW's 26.5 m<sup>2</sup> g<sup>−1</sup>) and induced quantum confinement effect, broadening the bandgap to 1.37 eV (from the initial DSSW value of 1.12 eV). These structural and electronic modifications facilitated exceptional photocatalytic hydrogen evolution, achieving an initial rate of 1408.3 μmol g<sup>−1</sup> h<sup>−1</sup> and a sustained average rate of 2319.4 μmol g<sup>−1</sup> h<sup>−1</sup> over 6 h. The corresponding solar-to-hydrogen (STH) conversion efficiency reached 0.76 %, with an apparent quantum yield (AQY) of 7.5 %. Importantly, Cu<sub>2</sub>O concentration was demonstrated to critically influence composite morphology and photocatalytic performance. This work bridges the photovoltaic and hydrogen energy sectors, presenting a high-value reutilization pathway for DSSW and demonstrating an efficient strategy for solar hydrogen production.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113998"},"PeriodicalIF":6.3,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revealing the effect of transparent conducting oxides on fill factor in silicon heterojunction solar cells 揭示透明导电氧化物对硅异质结太阳能电池填充因子的影响

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-02 DOI: 10.1016/j.solmat.2025.113991

Lin Li , Daxue Du , Sheng Ma , Huanpei Huang , Zhengping Li , Wenzhong Shen

{"title":"Revealing the effect of transparent conducting oxides on fill factor in silicon heterojunction solar cells","authors":"Lin Li , Daxue Du , Sheng Ma , Huanpei Huang , Zhengping Li , Wenzhong Shen","doi":"10.1016/j.solmat.2025.113991","DOIUrl":"10.1016/j.solmat.2025.113991","url":null,"abstract":"<div><div>Transparent conducting oxide (TCO) plays a pivotal role in determining the fill factor (FF) of silicon heterojunction (SHJ) solar cells. However, quantitative analysis linking intrinsic TCO properties to FF modulation remain limited. In this work, a dual-mechanism fitting (DMFT) model has been proposed to resolve and evaluate the contributions of TCO conductive transport and interfacial band alignment effects. The two pathways are independently assessed through resistance decomposition with equivalent circuit and TCAD simulations informed by work-function and electrical properties. An unconstrained linear combination model is formulated and fitted, which effectively reproduces the experimental FF trend. Coefficient magnitudes reveal the dominant pathway, and the near-unity sum confirms model completeness and physical complementarity. The proposed DMFT framework offers a robust and generalizable approach for interpreting and predicting FF behavior in SHJ cells, providing actionable insights for TCO process optimization and high efficiency device design.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113991"},"PeriodicalIF":6.3,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The impact of IGe defects on the photovoltaic performance of CsGeI3: A DFT and NAMD study IGe缺陷对CsGeI3光电性能的影响：DFT和NAMD研究

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-02 DOI: 10.1016/j.solmat.2025.113988

Jian-Jie Kang , Fang-Jing Kang , Shuai-Shuai Liu , Ze Peng , Yun-Hua Cheng , Hai-Shan Zhang

{"title":"The impact of IGe defects on the photovoltaic performance of CsGeI3: A DFT and NAMD study","authors":"Jian-Jie Kang , Fang-Jing Kang , Shuai-Shuai Liu , Ze Peng , Yun-Hua Cheng , Hai-Shan Zhang","doi":"10.1016/j.solmat.2025.113988","DOIUrl":"10.1016/j.solmat.2025.113988","url":null,"abstract":"<div><div>The fully inorganic, lead-free perovskite CsGeI<sub>3</sub> exhibits superior thermal stability, photostability, and environmental compatibility compared with its lead-based counterparts. However, its photovoltaic efficiency is significantly constrained by intrinsic defects. In this work, we systematically examine the electronic structure, defect properties, and carrier dynamics of CsGeI<sub>3</sub> using density functional theory (DFT) combined with nonadiabatic molecular dynamics (NAMD). Our results indicate that I<sub>Ge</sub> defects preferentially form under Ge-deficient and I-rich conditions. The (0/−1) transition level located at E<sub>VBM</sub>+0.8 eV functions as a deep donor state and an efficient carrier recombination center. Although these defects exert minimal influence on optical absorption, they substantially reduce carrier lifetimes—from 132 ns in pristine CsGeI<sub>3</sub> to 6.1 ns in the presence of I<sub>Ge</sub> defects—due to additional recombination channels and strong nonadiabatic coupling between the defect states and the conduction-band minimum (CBM). This accelerated recombination critically compromises photovoltaic performance. Therefore, effective passivation strategies for deep-level I<sub>Ge</sub> defects are crucial for enhancing the efficiency of CsGeI<sub>3</sub> and advancing its practical application in solar cells.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113988"},"PeriodicalIF":6.3,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ambient-air fabrication of bar-coated ionic liquid-assisted perovskite films with micrometer-scale grain sizes for stable solar cells 稳定太阳能电池用微米级颗粒棒包覆离子液体辅助钙钛矿薄膜的环境空气制备

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-01 DOI: 10.1016/j.solmat.2025.113996

Yugo Nakahara , Md. Shahiduzzaman , Ruka Yazawa , Masahiro Nakano , Makoto Karakawa , Ryo Nishiyama , Shiro Ikuhara , Kozo Kotani , Koji Tomita , Kohshin Takahashi , Jean Michel Nunzi , Tetsuya Taima

{"title":"Ambient-air fabrication of bar-coated ionic liquid-assisted perovskite films with micrometer-scale grain sizes for stable solar cells","authors":"Yugo Nakahara , Md. Shahiduzzaman , Ruka Yazawa , Masahiro Nakano , Makoto Karakawa , Ryo Nishiyama , Shiro Ikuhara , Kozo Kotani , Koji Tomita , Kohshin Takahashi , Jean Michel Nunzi , Tetsuya Taima","doi":"10.1016/j.solmat.2025.113996","DOIUrl":"10.1016/j.solmat.2025.113996","url":null,"abstract":"<div><div>Fabricating perovskite solar cells (PSCs) in ambient air may lower production costs and enhance the feasibility of commercialization of this cutting-edge technology. However, ambient-air fabrication of perovskite films often results in rough surfaces, pinholes, and non-uniform coverage, which increase non-radiative recombination in PSCs. In this work, we fabricated uniform pinhole-free perovskite films with large crystal domains of several tens of micrometers under ambient conditions (40 % relative humidity) by bar coating using 1-hexyl-3-methylimidazolium chloride as an ionic liquid (IL). The IL molecules in the perovskite solution protected the perovskite from interacting with moisture, facilitating the fabrication of high-quality perovskite films under ambient conditions. PSCs with bar-coated IL-assisted perovskite films exhibited over 90 % of their initial solar output after storage for 1000 h in the dark under ambient conditions (relative humidity of 40 %–50 %), illustrating their higher long-term moisture stability than that of devices with conventional spin-coated perovskite films. This high moisture stability is attributed to the dense perovskite grains with sizes of one to several tens of micrometers obtained by bar coating rather than spin coating.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113996"},"PeriodicalIF":6.3,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature dependence of Auger recombination in crystalline silicon from 117–463 K 117-463 K下晶体硅中俄歇复合的温度依赖性

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-10-01 DOI: 10.1016/j.solmat.2025.113985

Lachlan E. Black , Yan Zhu , Ziv Hameiri , Daniel H. Macdonald

{"title":"Temperature dependence of Auger recombination in crystalline silicon from 117–463 K","authors":"Lachlan E. Black , Yan Zhu , Ziv Hameiri , Daniel H. Macdonald","doi":"10.1016/j.solmat.2025.113985","DOIUrl":"10.1016/j.solmat.2025.113985","url":null,"abstract":"<div><div>As crystalline silicon solar cells approach their theoretical limit, a better understanding of the Auger recombination processes which define this limit is required, including at temperatures away from room temperature, where most solar modules operate. In this work, we apply a recently developed approach to measure the temperature dependence of the ambipolar Auger coefficient, <span><math><msub><mrow><mi>C</mi></mrow><mrow><mi>a</mi><mi>m</mi><mi>b</mi></mrow></msub></math></span>, in the range of 117–463 K at carrier concentrations relevant for solar cell operation. We observe a significant dependence of <span><math><msub><mrow><mi>C</mi></mrow><mrow><mi>a</mi><mi>m</mi><mi>b</mi></mrow></msub></math></span> on temperature, decreasing with increasing temperature in the measured range. We show that disagreement between the temperature dependence observed in previous works can be explained as resulting from differences in the carrier concentration range probed by different experiments, with our results showing good agreement with previous measurements performed at lower concentrations. This can be understood in terms of the temperature and carrier concentration dependence of the Coulomb enhancement factors. We develop a semi-empirical parameterisation of Auger recombination valid for arbitrary carrier concentrations and temperatures that extends the current established room-temperature model to incorporate the observed temperature dependence. We show that consideration of the temperature dependence of Auger recombination has significant consequences for the limiting efficiency of solar cells and modules at typical operating temperatures.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113985"},"PeriodicalIF":6.3,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selective laser ablation of single layers from SiO2/poly-Si superlattices for patterning of 26 % efficient IBC solar cells 选择性激光烧蚀SiO2/多晶硅超晶格单层用于26%效率IBC太阳能电池的图像化

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-09-30 DOI: 10.1016/j.solmat.2025.113992

Udo Römer , Michael Rienäcker , Robby Peibst

{"title":"Selective laser ablation of single layers from SiO2/poly-Si superlattices for patterning of 26 % efficient IBC solar cells","authors":"Udo Römer , Michael Rienäcker , Robby Peibst","doi":"10.1016/j.solmat.2025.113992","DOIUrl":"10.1016/j.solmat.2025.113992","url":null,"abstract":"<div><div>We present a new process for the fabrication of high efficiency IBC solar cells with passivating poly-Si contacts for both polarities. Aiming at short processing times and keeping commercial adaption in mind, we use in-situ doped LPCVD (Low Pressure Chemical Vapor Deposition) poly-Si layers and perform all patterning steps with lasers. We show details on the process optimization for the laser structuring, that consists of the ablation of an SiO<sub>2</sub> etch barrier followed by KOH etching of the exposed poly-Si layers. There is a large process window for the laser power for the layer stack we use in our experiment. This enables the removal of an <em>n</em><sup>+</sup>-type doped poly-Si layer without damaging an underlying <em>p</em><sup>+</sup>-type doped poly-Si layer. A batch with <em>p</em>-type Si cells using this new process results in a device with efficiency of 25.5 % on 3.97 cm<sup>2</sup> large solar cells. We present an analysis of the light-<em>IV</em> parameters to disclose the dominating losses. With further optimization we demonstrate independently confirmed 26.0 % efficiency on 24.5 cm<sup>2</sup> large solar cells from <em>n</em>-type Si.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113992"},"PeriodicalIF":6.3,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-cost MgCl2·6H2O-based composite thermochemical material for low-to-medium temperature heat storage 用于中低温储热的低成本MgCl2·6h2o基复合热化学材料

IF 6.3 2区材料科学

Solar Energy Materials and Solar Cells Pub Date : 2025-09-30 DOI: 10.1016/j.solmat.2025.113983

Hongkun Ma, Boyang Zou , Jie Chen, Zhu Jiang , Binjian Nie , Yulong Ding

{"title":"Low-cost MgCl2·6H2O-based composite thermochemical material for low-to-medium temperature heat storage","authors":"Hongkun Ma, Boyang Zou , Jie Chen, Zhu Jiang , Binjian Nie , Yulong Ding","doi":"10.1016/j.solmat.2025.113983","DOIUrl":"10.1016/j.solmat.2025.113983","url":null,"abstract":"<div><div>Thermochemical energy storage provides a promising and efficient way for low-to-medium temperature heat storage due to its high energy density and small heat loss for long-term storage. The key technological issues are poor thermal stability, which limits its lifespan and application significantly, and the problem of agglomeration, which leads to poor mass transfer and incomplete charging and discharging processes, hence the disappointing reversibility. Here we report the composite of magnesium chloride hexahydrate (MgCl<sub>2</sub>·6H<sub>2</sub>O) and fine vermiculite powder, fabricated using a shaping method that stabilises the material structure and improves mass transfer. The composite with a 50% MgCl<sub>2</sub>·6H<sub>2</sub>O-vermiculite (50% MC-VM) demonstrates a superior dehydration enthalpy at 130 °C. The study further evaluated the reversibility of 50% MC-VM, showing a 37% improvement over pure MgCl<sub>2</sub>·6H<sub>2</sub>O. To further enhance the energy storage performance, potassium chloride (KCl) was introduced to formulate an upgraded MgCl<sub>2</sub>·6H<sub>2</sub>O-KCl-vermiculite (MKV) composite, which delivers an even higher energy density exceeding 923 J/g. Dehydration kinetic analyses were also performed to calculate the apparent activation energy at various degrees of dehydration. The cost analysis demonstrates that this technology is low-cost, sustainable and promising for scaling up for practical application.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"295 ","pages":"Article 113983"},"PeriodicalIF":6.3,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0