EPJ Photovoltaics最新文献

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Plated TOPCon solar cells & modules with reliable fracture stress and soldered module interconnection 镀TOPCon太阳能电池和组件具有可靠的断裂应力和焊接组件互连
IF 2.5
EPJ Photovoltaics Pub Date : 2021-01-01 DOI: 10.1051/epjpv/2021010
S. Kluska, B. Grübel, G. Cimiotti, C. Schmiga, Heinrich Berg, A. Beinert, Irene Kubitza, Paul Müller, T. Voss
{"title":"Plated TOPCon solar cells & modules with reliable fracture stress and soldered module interconnection","authors":"S. Kluska, B. Grübel, G. Cimiotti, C. Schmiga, Heinrich Berg, A. Beinert, Irene Kubitza, Paul Müller, T. Voss","doi":"10.1051/epjpv/2021010","DOIUrl":"https://doi.org/10.1051/epjpv/2021010","url":null,"abstract":"This work demonstrates that the application of plated Ni/Cu/Ag contacts for TOPCon solar cells and modules is a reliable alternative to screen-printed metallization. Key advantages of plated metallization is a significant reduction of material costs [B. Grübel et al., in Proceedings 11th SiliconPV Conference, Hamelin, 2021, to be published] due to the substitution of a fully printed silver finger by a stack of a thin nickel seed layer (0.5-1 μm height), highly conductive copper finger (3–10 μm height) and an ultra-thin surface finish by tin (1–3 μm height) or silver (<0.5 μm height). In this study it will be shown that conventional soldering technology can be used to interconnect plated TOPCon solar cells. We manufactured a 60-cell module using industrial processes. The right choice of plating electrolyte allows low stress and ductile metal finger leading to similar reliability in cell breakage experiments compared to state-of-the-art screen-printing metallization.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":"1 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"57827852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
LID and LETID evolution of PV modules during outdoor operation and indoor tests 光伏组件在室外运行和室内测试时LID和LETID的演变
IF 2.5
EPJ Photovoltaics Pub Date : 2021-01-01 DOI: 10.1051/epjpv/2021009
E. Fokuhl, D. Philipp, G. Mülhöfer, P. Gebhardt
{"title":"LID and LETID evolution of PV modules during outdoor operation and indoor tests","authors":"E. Fokuhl, D. Philipp, G. Mülhöfer, P. Gebhardt","doi":"10.1051/epjpv/2021009","DOIUrl":"https://doi.org/10.1051/epjpv/2021009","url":null,"abstract":"Light Induced Degradation (LID) and Light and Elevated Temperature Induced Degradation (LETID) manifest with carrier injection due to light or forward bias and can lead to performance losses during the first months or years of operation in the field. We are investigating the effects of common LETID indoor test conditions and the module temperature under outdoor exposure on the evolution of BO LID and LETID over time. The investigations are based on experimental data from twelve structurally identical mono-crystalline and two multi-crystalline PERC PV modules, which underwent a detailed experiment including five different indoor test sequences and an outdoor test. Changes in the module performance are discussed based on the current knowledge on state transitions of the BO defect and LETID. Temporary recovery of the LETID defect was used to distinguish LETID from other degradation mechanisms. Our results confirm the importance of BO stabilization prior to LETID tests as it is included in the current IEC TS draft for LETID detection. We also show that too strong acceleration of the processes can lead to misinterpretation of LETID test results. Under dark storage conditions, destabilization of BO defects was found to already evolve at temperatures as low as 75 °C and a likely alteration of subsequent LETID was observed. The performance changes under outdoor exposure can be explained with the same mechanisms as investigated under indoor experiments and reveal reversible seasonal recovery effects. Furthermore, the influence of different module operating temperatures on the evolution of both, BO LID and LETID is presented and evaluated.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":"1 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"57827838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Color coated glazing for next generation BIPV: performance vs aesthetics 下一代BIPV彩涂玻璃:性能vs美学
IF 2.5
EPJ Photovoltaics Pub Date : 2021-01-01 DOI: 10.1051/epjpv/2021012
Benjamin Riedel, Paul Messaoudi, Y. Assoa, P. Thony, R. Hammoud, Laure‐Emmanuelle Perret‐Aebi, J. A. Tsanakas
{"title":"Color coated glazing for next generation BIPV: performance vs aesthetics","authors":"Benjamin Riedel, Paul Messaoudi, Y. Assoa, P. Thony, R. Hammoud, Laure‐Emmanuelle Perret‐Aebi, J. A. Tsanakas","doi":"10.1051/epjpv/2021012","DOIUrl":"https://doi.org/10.1051/epjpv/2021012","url":null,"abstract":"Through the H2020 BE-SMART project, we work on the validation and industrialization of new materials (and processes) for manufacturing next-generation cost-efficient, reliable and highly aesthetic/performing BIPV. On this basis, we aim at introducing novel multifunctional and transformative BIPV elements, in the concept/form of Energy Positive Glazing (EPoG). The project's developments so far indicate the high potential of e.g. using colored encapsulants, interferential filter technique and/or ceramic-based colored glazing for implementing novel “transformative” BIPV with high aesthetic quality. Yet, since BIPV's primary function is electricity production, we need to understand and quantify the impact of such coloration solutions on the performance (and reliability, in longer terms) of future BIPV. In this paper, we present an experimental comparative study on the optical and electrical performance of multiple color coated and patterned BIPV glazing solutions, towards their upscaling and commercialization. In particular, we performed optical transmission measurements and light intensity-/angle-depent IV characterization on 25 different colored glass samples and 10 different colored/patterned glass PV laminates respectively. The measurement results and their discussion presented in this paper provide valuable insights into the optical-electrical performance of the investigated colored BIPV glazing, as well as a first identification of BIPV industry-relevant colors and patterns with the best potential “compromise” between aesthetics and performance, for future energy positive glazing applications.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":"1 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"57827899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Nanomolded buried light-scattering (BLiS) back-reflectors using dielectric nanoparticles for light harvesting in thin-film silicon solar cells 使用介电纳米颗粒在薄膜硅太阳能电池中进行光收集的纳米成型埋式光散射(BLiS)背反射器
IF 2.5
EPJ Photovoltaics Pub Date : 2020-12-01 DOI: 10.1051/epjpv/2019011
D. Desta, R. Rizzoli, C. Summonte, R. Pereira, A. Larsen, P. Balling, S. Ram
{"title":"Nanomolded buried light-scattering (BLiS) back-reflectors using dielectric nanoparticles for light harvesting in thin-film silicon solar cells","authors":"D. Desta, R. Rizzoli, C. Summonte, R. Pereira, A. Larsen, P. Balling, S. Ram","doi":"10.1051/epjpv/2019011","DOIUrl":"https://doi.org/10.1051/epjpv/2019011","url":null,"abstract":"The article presents a nanoparticle-based buried light-scattering (BLiS) back-reflector design realized through a simplified nanofabrication technique for the purpose of light-management in solar cells. The BLiS structure consists of a flat silver back-reflector with an overlying light-scattering bilayer which is made of a TiO2 dielectric nanoparticles layer with micron-sized inverted pyramidal cavities, buried under a flat-topped silicon nanoparticles layer. The optical properties of this BLiS back-reflector show high broadband and wide angular distribution of diffuse light-scattering. The efficient light-scattering by the buried inverted pyramid back-reflector is shown to effectively improve the short-circuit-current density and efficiency of the overlying n-i-p amorphous silicon solar cells up to 14% and 17.5%, respectively, compared to the reference flat solar cells. A layer of TiO2 nanoparticles with exposed inverted pyramid microstructures shows equivalent light scattering but poor fill factors in the solar cells, indicating that the overlying smooth growth interface in the BLiS back-reflector helps to maintain a good fill factor. The study demonstrates the advantage of spatial separation of the light-trapping and the semiconductor growth layers in the photovoltaic back-reflector without sacrificing the optical benefit.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":" ","pages":""},"PeriodicalIF":2.5,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1051/epjpv/2019011","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45627976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Geometrical optimization for a photovoltaic installation equipped with flat reflectors based on plane of array estimations 基于阵列平面估计的平板反射器光伏装置的几何优化
IF 2.5
EPJ Photovoltaics Pub Date : 2020-12-01 DOI: 10.1051/epjpv/2019010
C. A. Nour, A. Migan-Dubois, J. Badosa, V. Bourdin, C. Marchand, T. Akiki
{"title":"Geometrical optimization for a photovoltaic installation equipped with flat reflectors based on plane of array estimations","authors":"C. A. Nour, A. Migan-Dubois, J. Badosa, V. Bourdin, C. Marchand, T. Akiki","doi":"10.1051/epjpv/2019010","DOIUrl":"https://doi.org/10.1051/epjpv/2019010","url":null,"abstract":"In order to design, manage and optimize the performance of a photovoltaic (PV) installation and establish a precise power production estimation, irradiance on the plane of array (POA) in relation with the geometrical characteristics of the PV modules installation occupies a high importance. This study focuses on the development of an estimation model of the POA irradiance for a photovoltaic installation equipped with flat reflectors. The model includes solar irradiance components (global, direct and diffuse), geometrical parameters and geographical characteristics of the PV installation. Experimental validations have been performed with measurements taken at the SIRTA Observatory (48.7°N, 2.2°E) in Palaiseau, France, for the period starting from June 2017 to June 2018. Results show mean absolute errors (relative to the mean) of 6% and 7% for an installation without and with planar reflector. Finally, we present several geometrical optimization strategies of the PV-reflector installation relying on two major variables: the reflector's length (LR) compared to the length of the PV module (LPV) and the tilt angle adjustment frequency (monthly, seasonally, fixed) of the system (for both PV and the reflectors). The objective of such optimization is to discuss about a reasonable configuration to achieve a maximum POA irradiance. Results show that the length of the mirrors highly affects the efficiency and performances of the PV-Reflector system and the annual gain increased from 8.5% to 28.7% when going from LR = LPV/2 to LR = 2 × LPV compared to a monthly-optimized installation without mirrors. As for the adjustment frequency, we show that a monthly-varied architecture is the most advantageous option with a 28.2 and 31.6% increasing in annual gain compared to a seasonal varied or fixed ones, respectively.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":"1 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1051/epjpv/2019010","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43960656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells 溶液处理TiO2作为PEDOT:PSS/n-Si异质结太阳能电池中的空穴阻挡层
IF 2.5
EPJ Photovoltaics Pub Date : 2020-04-01 DOI: 10.1051/epjpv/2020004
Md. Enamul Karim, A. S. Islam, Yuki Nasuno, Abdul Kuddus, R. Ishikawa, H. Shirai
{"title":"Solution-processed TiO2 as a hole blocking layer in PEDOT:PSS/n-Si heterojunction solar cells","authors":"Md. Enamul Karim, A. S. Islam, Yuki Nasuno, Abdul Kuddus, R. Ishikawa, H. Shirai","doi":"10.1051/epjpv/2020004","DOIUrl":"https://doi.org/10.1051/epjpv/2020004","url":null,"abstract":"The junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse recovery characterizations. The power conversion efficiency could be increased from 11.23% to 13.08% by adjusting the layer thickness of TiO2 together with increasing open-circuit voltage and suppressed dark saturation current density. These findings originate from the enhancement of the carrier collection efficiency at the n-Si/cathode interface. The transient reverse recovery characterization revealed that the surface recombination velocity S was ∼375 cm/s for double TiO2 interlayer of ∼2 nm thickness. This value was almost the same as that determined by microwave photoconductance decay measurement. These findings suggest that solution-processed TiO2 has potential as a hole blocking layer for the crystalline Si photovoltaics.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":" ","pages":""},"PeriodicalIF":2.5,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1051/epjpv/2020004","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49576894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Study of transport parameters and defect states in thin film perovskites under different environments − air or vacuum − and after light-soaking 不同环境(空气或真空)和光浸泡后薄膜钙钛矿的输运参数和缺陷状态的研究
IF 2.5
EPJ Photovoltaics Pub Date : 2020-02-26 DOI: 10.1051/epjpv/2019009
C. Longeaud
{"title":"Study of transport parameters and defect states in thin film perovskites under different environments − air or vacuum − and after light-soaking","authors":"C. Longeaud","doi":"10.1051/epjpv/2019009","DOIUrl":"https://doi.org/10.1051/epjpv/2019009","url":null,"abstract":"We present some advanced characterization techniques developed to investigate on the opto-electronic properties of thin film semiconductors and apply them to perovskite layers. These techniques are the steady state photocarrier grating (SSPG) and the Fourier transform photocurrent spectroscopy (FTPS). The SSPG was developed to study the ambipolar diffusion length of carriers and the FTPS was imagined to measure the variations of the below gap absorption coefficient with the light energy, giving information on the defect densities of the gap responsible for this absorption. The potentialities of these techniques are first detailed and then exemplified by their application to thin film perovskites. To study their stability, these films were exposed to different environments, air or vacuum, and in their as-deposited state or after light-soaking with heavy light. We find that the diffusion length and density of states are quite stable, even after light-soaking, and suggest that the degradation of devices exposed to 1 sun mainly comes from the evolution of the contacts instead of the perovkite itself.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":" ","pages":""},"PeriodicalIF":2.5,"publicationDate":"2020-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1051/epjpv/2019009","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46283154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates 高掺杂硅衬底上低温等离子体外延硅的电学特性
IF 2.5
EPJ Photovoltaics Pub Date : 2020-01-07 DOI: 10.1051/epjpv/2020002
C. Léon, S. Le Gall, M. Gueunier‐Farret, J. Kleider, P. Roca i Cabarrocas
{"title":"Electrical characterization of low temperature plasma epitaxial Si grown on highly doped Si substrates","authors":"C. Léon, S. Le Gall, M. Gueunier‐Farret, J. Kleider, P. Roca i Cabarrocas","doi":"10.1051/epjpv/2020002","DOIUrl":"https://doi.org/10.1051/epjpv/2020002","url":null,"abstract":"Epitaxial silicon layers were grown on highly doped c-Si substrates using the plasma-enhanced chemical vapour deposition process (PECVD) at low temperature (175 °C). The transport and defect-related properties of these epi-Si layers were characterized by current density-voltage (J–V) and capacitance–voltage (C–V) techniques. The results show that the epi-Si layers exhibit a non-intentional n-type doping with a low apparent doping density of about 2 × 1015 cm−3. The admittance spectroscopy technique is used to investigate the presence of deep-level defects in the structure. An energy level at 0.2 eV below the conduction band has been found with a density in the range of 1015 cm−3 which may explain the observed apparent doping profile.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":" ","pages":""},"PeriodicalIF":2.5,"publicationDate":"2020-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1051/epjpv/2020002","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44370683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ALD-ZnMgO and absorber surface modifications to substitute CdS buffer layers in co-evaporated CIGSe solar cells ALD-ZnMgO和吸收剂表面改性替代共蒸发CIGSe太阳能电池中的CdS缓冲层
IF 2.5
EPJ Photovoltaics Pub Date : 2020-01-01 DOI: 10.1051/EPJPV/2020010
R. Hertwig, S. Nishiwaki, M. Ochoa, Shih‐Chi Yang, T. Feurer, E. Gilshtein, A. Tiwari, R. Carron
{"title":"ALD-ZnMgO and absorber surface modifications to substitute CdS buffer layers in co-evaporated CIGSe solar cells","authors":"R. Hertwig, S. Nishiwaki, M. Ochoa, Shih‐Chi Yang, T. Feurer, E. Gilshtein, A. Tiwari, R. Carron","doi":"10.1051/EPJPV/2020010","DOIUrl":"https://doi.org/10.1051/EPJPV/2020010","url":null,"abstract":"High efficiency chalcopyrite thin film solar cells generally use chemical bath deposited CdS as buffer layer. The transition to Cd-free buffer layers, ideally by dry deposition methods is required to decrease Cd waste, enable all vacuum processing and circumvent optical parasitic absorption losses. In this study, Zn1−xMgxO thin films were deposited by atomic layer deposition (ALD) as buffer layers on co-evaporated Cu(In,Ga)Se2 (CIGS) absorbers. A specific composition range was identified for a suitable conduction band alignment with the absorber surface. We elucidate the critical role of the CIGS surface preparation prior to the dry ALD process. Wet chemical surface treatments with potassium cyanide, ammonium hydroxide and thiourea prior to buffer layer deposition improved the device performances. Additional in-situ surface reducing treatments conducted immediately prior to Zn1−xMgxO deposition improved device performance and reproducibility. Devices were characterised by (temperature dependant) current-voltage and quantum efficiency measurements with and without light soaking treatment. The highest efficiency was measured to be 18%.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":"1 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"57827676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers RbF-PDT对具有cd和Zn(O,S)缓冲层的Cu(In,Ga)Se2太阳能电池的影响
IF 2.5
EPJ Photovoltaics Pub Date : 2020-01-01 DOI: 10.1051/epjpv/2020005
A. Kanevce, S. Paetel, D. Hariskos, T. Friedlmeier
{"title":"Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers","authors":"A. Kanevce, S. Paetel, D. Hariskos, T. Friedlmeier","doi":"10.1051/epjpv/2020005","DOIUrl":"https://doi.org/10.1051/epjpv/2020005","url":null,"abstract":"Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers.","PeriodicalId":42768,"journal":{"name":"EPJ Photovoltaics","volume":"1 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1051/epjpv/2020005","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"57827625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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