ICT 2005. 24th International Conference on Thermoelectrics, 2005.最新文献_第2页

Thermoelectric and thermophysical properties of TiCoSb, ZrCoSb, HfCoSb prepared by SPS SPS法制备TiCoSb, ZrCoSb, HfCoSb的热电和热物理性质

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519955

T. Sekimoto, K. Kurosaki, H. Muta, S. Yamasaka

引用次数: 10

Comparison of skutterudites and advanced thin-film B/sub 4/C/B/sub 9/C and Si/SiGe materials in advanced thermoelectric energy recovery systems 先进热电能量回收系统中滑石与先进薄膜B/sub 4/C/B/sub 9/C和Si/SiGe材料的比较

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519963

T. Hendricks

{"title":"Comparison of skutterudites and advanced thin-film B/sub 4/C/B/sub 9/C and Si/SiGe materials in advanced thermoelectric energy recovery systems","authors":"T. Hendricks","doi":"10.1109/ICT.2005.1519963","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519963","url":null,"abstract":"Various advanced thermoelectric (TE) materials have properties that are inherently advantageous for particular TE energy recovery applications. Skutterudites, 0- and 1-dimensional quantum-well materials, and thin-film superlattice materials are providing enhanced opportunities for advanced TE energy recovery. This work demonstrates that early skutterudites materials in dual-material, segmented couple designs may be best suited for higher temperature applications associated with spacecraft power systems and very high temperature exhaust waste heat recovery in heavy vehicles. Early thin-film BxC/Si-SiGe materials appear to be well suited for mid-temperature ranges in exhaust waste heat recovery in heavy-duty and passenger vehicles. Potential power generation at specific exhaust temperature levels and for various heat exchanger performance levels are presented showing the current design sensitivities using each of these TE material sets. Mathematical relationships inherently linking optimum TE design variables and the thermal systems design (i.e., heat exchangers) are also investigated.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114112229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Growth technique and structural properties of the higher manganese silicide films 高硅化锰薄膜的生长技术及结构性能

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519933

T. Kamilov, D. K. Kabilov, I. S. Samiev, H. Husnutdinova, S. Dadamuhamedov, V. Klechkovskaya

{"title":"Growth technique and structural properties of the higher manganese silicide films","authors":"T. Kamilov, D. K. Kabilov, I. S. Samiev, H. Husnutdinova, S. Dadamuhamedov, V. Klechkovskaya","doi":"10.1109/ICT.2005.1519933","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519933","url":null,"abstract":"Higher manganese silicide - MnSi/sub /spl sim/1.7/ was found as semiconducting and can be a promising thermoelectric material for high temperature applications. In this work, we report the growth of continuous higher manganese silicide film formed on silicon substrate. The growth technique of the higher manganese silicide films was described in detail. The element-phase composition of the silicide films was determined by scanning electron X-ray microanalyzer. Si and Mn doping depth profiles of the samples were presented. As a result of the experimental investigation we found optimal operating conditions to grow polycrystalline higher manganese silicide films. It was established that the grown silicide layer at the substrate temperature T/sub sub/= 1040-1060/spl deg/C consist predominantly of higher manganese suicide MnSi/sub 1.71-1.75/ grains with thickness ranging from 5 to 30 /spl mu/m and oriented along the substrate normal. The structure of grown silicide films was studied by electron diffraction, and the morphology of these films studied using scanning electron microscopy.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121805969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Power generation of thermoelectric oxide modules 热电氧化物组件发电

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519947

R. Funahashi, T. Mihara, M. Mikami, S. Urata, N. Ando

{"title":"Power generation of thermoelectric oxide modules","authors":"R. Funahashi, T. Mihara, M. Mikami, S. Urata, N. Ando","doi":"10.1109/ICT.2005.1519947","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519947","url":null,"abstract":"Different versions of a thermoelectric unicouple composed of p-type Ca/sub 2.7/Bi/sub 0.3/Co/sub 4/O/sub 9/ (Co-349) and n-type La/sub 0.9/Bi/sub 0.1/NiO/sub 3/ (Ni-113) bulks were constructed using Ag paste containing p- and n-type oxide powders, for connection between p- or n-legs and Ag electrodes, respectively. Open-circuit voltage V/sub 0/ of the unicouple connected using Ag paste containing 6wt% of the oxide powders reaches 100 mV at a hot-side temperature T/sub H/ of 1073 K and a temperature difference AT of 500 K in air. Internal resistance R/sub I/ of this unicouple is 26.2 m/spl Omega/ at 1073 K in air and decreases with increasing temperature. Maximum output power P/sub max/, evaluated using the formula P/sub max/ = V/sub 0//sup 2//4R/sub I/, is 94 mW at 1073 K (/spl Delta/T= 500 K) and increases with temperature. This value corresponds to a volume power density of 0.66 W/cm/sup 3/. The incorporation of oxide powders in Ag paste is shown to be effective to reduce the contact resistance and the thermal hysteresis effect at oxide/metal junctions. High power density is a strong point of thermoelectric generation. Exploitation of this salient characteristic would make thermoelectric modules promising candidates for mobile power applications. Here we show how power can be generated using a small thermoelectric module composed of 140 pairs of oxide thermoelectric unicouples. The module weighs 19.8 g and its dimensions are 53 mm long, 32 mm wide, and 5.0 mm thick. The hot-pressed thermoelectric oxide bulk materials used were connected with an Ag paste, incorporating 6wt% of oxide powder, and Ag electrodes. The module's V/sub 0/ increases with increasing hot-side temperature (T/sub H/) and reaches 4.5 V at a T/sub H/ of 1072 K in air. No deterioration in output power was seen when power generation was carried out ten times at a T/sub H/ of 723 K with intermediate cooling to room temperature. The module was successfully used to charge a lithium-ion battery in a mobile phone.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130881371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Preparation and thermoelectric properties of Ca/sub 3/Co/sub 2/O/sub 6/ ceramic bulk Ca/sub 3/Co/sub 2/O/sub 6/陶瓷体的制备及其热电性能

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519881

Q. Lu, J.X. Zhang, Y.Q. Liu, D. Liu, M.L. Zhou

引用次数: 0

Measurement of the in-plane thermal conductivity of single crystals by the parallel thermal conductance technique 用平行热导技术测量单晶平面内热导率

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519894

K. Aaron, Xiaofeng Tang, T. Tritt

引用次数: 5

Doping studies and thermoelectric properties of TiS/sub 2/ TiS/ sub2 /的掺杂研究及热电性能

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519897

W. Sams, N. Lowhorn, T. Tritt, E. Abbott, J. Kolis

引用次数: 0

Origin of low thermal conductivity in /spl alpha/-Mn: enhancing the ZT of YbAl/sub 3/ and CoSb/sub 3/ through Mn addition /spl α /-Mn中导热系数低的原因:Mn的加入提高了YbAl/sub 3/和CoSb/sub 3/的ZT

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519980

T. He, T. G. Calvarese, J.-Z. Chen, H. D. Rosenfeld, R. Small, J. Krajewski, M. Subramanian

引用次数: 3

Synthesis and rietveld analysis for CoSb/sub 3/ compounds prepared by Sb self-flux method Sb自通量法制备CoSb/sub - 3/化合物的合成及rietveld分析

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519903

T. Souma, M. Ohtaki

引用次数: 1

Thermoelectrics of n-type with ZT > 1 based on Mg/sub 2/Si-Mg/sub 2/Sn solid solutions 基于Mg/sub - 2/Si-Mg/sub - 2/Sn固溶体的ZT > 1 n型热电材料

ICT 2005. 24th International Conference on Thermoelectrics, 2005. Pub Date : 2005-06-19 DOI: 10.1109/ICT.2005.1519920

V. Zaitsev, M. Fedorov, E. A. Gurieva, I. Eremin, P. Konstantinov, A. Samunin, M. Vedernikov

{"title":"Thermoelectrics of n-type with ZT > 1 based on Mg/sub 2/Si-Mg/sub 2/Sn solid solutions","authors":"V. Zaitsev, M. Fedorov, E. A. Gurieva, I. Eremin, P. Konstantinov, A. Samunin, M. Vedernikov","doi":"10.1109/ICT.2005.1519920","DOIUrl":"https://doi.org/10.1109/ICT.2005.1519920","url":null,"abstract":"The paper presents the results of extensive experimental and theoretical study of the solid solutions in the system Mg/sub 2/Si-Mg/sub 2/Sn. It is shown that the system is a favorable base for the creation of excellent thermoelectrics with band type of conductivity. The reproducible results are obtained for Seebeck and Hall coefficients, electrical and thermal conductivity in the wide temperature range 77-850 K for the samples of various solid solution composition and various electron concentration (up to 5/spl middot/10/sup 20/ cm/sup -3/). At optimum solid solution composition and electron concentration the thermoelectric of ZT/sub max/=1.1 is produced reliably. Average ZT value in the temperature range 350-830 K is about 0.8 for this material. It is shown that the high value of ZT is achieved due to some features of band structure of these materials. It is of great interest that these thermoelectrically remarkable alloys have simple crystallographic structure, made by a traditional technology and are formed from very cheap and ecologically friendly components.","PeriodicalId":422400,"journal":{"name":"ICT 2005. 24th International Conference on Thermoelectrics, 2005.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115515324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8