2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)最新文献

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Open-Source Fully-Synthesizable ADPLL for a Bluetooth Low-Energy Transmitter in 12nm FinFET Technology 12纳米FinFET技术的蓝牙低能量发射器的开源可完全合成ADPLL
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863190
Kyumin Kwon, Omar Abdelatty, D. Wentzloff
{"title":"Open-Source Fully-Synthesizable ADPLL for a Bluetooth Low-Energy Transmitter in 12nm FinFET Technology","authors":"Kyumin Kwon, Omar Abdelatty, D. Wentzloff","doi":"10.1109/RFIC54546.2022.9863190","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863190","url":null,"abstract":"In this work, we present an open-source fully-synthesizable fractional-N ADPLL designed for a Bluetooth Low-Energy (BLE) transmitter (TX). A highly automated design flow is used to lower the barrier for new developers and to reduce porting cost. In the PLL, a novel two-step TDC (TSTDC) is proposed, which is amenable to P&R, and uses an embedded TDC (EMBTDC) and vernier delay-line TDC (DLTDC) as coarse and fine TDCs, respectively. This combination reduces the required DLTDC input time range by 5x and is used to measure and compensate the P&R induced non-linearity of the EMBTDC. The PLL is fabricated in 12-nm FinFET and demonstrated in a BLE-TX. BLE transmissions satisfy the standard requirements thanks to the reduced fractional spurs by abovementioned techniques. In a standalone PLL mode, the TSTDC reduced fractional spurs by 6.8 dB compared to an EMBTDC alone, and the proposed LUT-based calibration further reduced spurs by 7.5 dB in near-integer operation. The PLL supports frequency range of 1.8-2.7GHz and consumes 3.91mW at 2.4006 GHz, with a 40MHz reference, occupying area of 0.063mm2.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123638262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fully Integrated Ultra-Wideband Differential Circulator Based on Sequentially Switched Delay Line in 28-nm FDSOI CMOS 基于顺序开关延迟线的28纳米FDSOI CMOS全集成超宽带差分环行器
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863099
J. Hwang, Byung-Wook Min
{"title":"Fully Integrated Ultra-Wideband Differential Circulator Based on Sequentially Switched Delay Line in 28-nm FDSOI CMOS","authors":"J. Hwang, Byung-Wook Min","doi":"10.1109/RFIC54546.2022.9863099","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863099","url":null,"abstract":"In this paper, a non-magnetic circulator, which realizes non-reciprocal signal flows by sequentially switching delay lines, is presented in 28-nm fully depleted silicon-on-insulator (FDSOI) CMOS process. The proposed circulator is designed differentially to increase power handling capability and bandwidth. The bandwidth of insertion loss and isolation can be extended by latticely coupled inductors used in the differential synthetic delay lines. The characteristic impedance of the delay lines is determined by considering the channel resistance of CMOS transistor. The measured insertion losses of transmitter (TX) to antenna (ANT) and ANT to receiver (RX) are 2.5 dB and 2.6 dB, respectively. TX to RX isolation is $> 20 text{dB}$ up to 7 GHz. The measured TX input power 1 dB compression point is 4.7 dBm at 3.5 GHz. The chip size of the differential circulator is $1.33times 0.72 text{mm}^{2}$, which is as small as a single ended version, thanks to the coupled inductors.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128803206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 28 GHz/39 GHz Dual-Band Four-Element MIMO RX with Beamspace Multiplexing at IF in 65-nm CMOS 基于65纳米CMOS的28 GHz/39 GHz双频四元MIMO RX中频波束空间复用技术
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863191
Robin Garg, Paul Dania, Gaurav Sharma, Armagan Dascurcu, Soumya Gupta, H. Krishnaswamy, A. Natarajan
{"title":"A 28 GHz/39 GHz Dual-Band Four-Element MIMO RX with Beamspace Multiplexing at IF in 65-nm CMOS","authors":"Robin Garg, Paul Dania, Gaurav Sharma, Armagan Dascurcu, Soumya Gupta, H. Krishnaswamy, A. Natarajan","doi":"10.1109/RFIC54546.2022.9863191","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863191","url":null,"abstract":"Dense-aperture mm-wave MIMO RX front-ends will require simplified IF interfaces, particularly when multiple 5G NR bands must be supported. The first dual-band 28 GHz and 39 GHz MIMO RX front-end with beam-space frequency-domain multiplexing (FDM) is presented that enables concurrent amplitude/phase weighted signal combining across four elements and 28 GHz/39 GHz bands. The FDM scheme places the four beam-space outputs at four different IF frequencies. The IC includes local multi-phase LO generation in each element, consumes 516mW (32.3mW/beam/element) and occupies 14mm2 in 65-nm CMOS.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128573666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An E-Band Phase Modulated Pulse Radar SoC with An Analog Correlator 带模拟相关器的e波段相位调制脉冲雷达SoC
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863185
Wen Zhou, Y. Tousi
{"title":"An E-Band Phase Modulated Pulse Radar SoC with An Analog Correlator","authors":"Wen Zhou, Y. Tousi","doi":"10.1109/RFIC54546.2022.9863185","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863185","url":null,"abstract":"This paper presents a bi-static integrated pulse radar in the E-band based on a digitally modulated transmitter and an analog processing receiver module. The proposed frontend correlator operates at 1Gbps and uses a 1.5-bit sampler to compress the sensing data, enabling a low-speed and energy-efficient digital backend while delivering a high range resolution. The TSMC 65nm chip prototype has a 1.5mm x 1.3mm area and consumes a total of 407mW with only 38mW corresponding to the analog baseband and digital backend. Over-the-air measurements at the 66GHz carrier frequency indicate the measured distance from the correlator output has an RMS error of 11.6cm and the integral non-linearity is less than 10cm across the entire target range, demonstrating the state-of-the-art range resolution with superior energy efficiency.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128643897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 5.1 dBm 127–162 GHz Frequency Sextupler with Broadband Compensated Transformer-Based Baluns in 22nm FD-SOI CMOS 基于22nm FD-SOI CMOS的带宽带补偿变压器平衡器的5.1 dBm 127-162 GHz频率六倍器
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863124
Shuyang Li, Wen-hua Chen, Xingcun Li, Yunfan Wang
{"title":"A 5.1 dBm 127–162 GHz Frequency Sextupler with Broadband Compensated Transformer-Based Baluns in 22nm FD-SOI CMOS","authors":"Shuyang Li, Wen-hua Chen, Xingcun Li, Yunfan Wang","doi":"10.1109/RFIC54546.2022.9863124","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863124","url":null,"abstract":"This paper presents a D-band frequency sextupler in 22 nm FD-SOI CMOS. It consists of a differential frequency tripler followed by a push-push frequency doubler for six times frequency multiplication, and several differential amplifiers for enhanced conversion gain and output power. A broadband balance-compensation method is proposed for transformer-based baluns to realize wideband conversion between single-ended and balanced signals. The measured peak output power and peak efficiency are 5.1 dBm and 8.49% at 145.5 GHz, respectively. The fabricated frequency sextupler features a 3-dB output power bandwidth from 127 to 162 GHz and low DC power consumption less than 50 m W from 0.8 V power supply.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117217957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
DC to 12+GHz, +30dBm OIP3, 7.2dB Noise Figure Active Balun in 130nm BiCMOS for RF Sampling Multi-Gbps Data Converters DC至12+GHz, +30dBm OIP3, 7.2dB噪声图有源Balun在130nm BiCMOS射频采样多gbps数据转换器
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863207
S. Akhtar, G. Schuppener, T. Dinc, B. Haroun, S. Sankaran
{"title":"DC to 12+GHz, +30dBm OIP3, 7.2dB Noise Figure Active Balun in 130nm BiCMOS for RF Sampling Multi-Gbps Data Converters","authors":"S. Akhtar, G. Schuppener, T. Dinc, B. Haroun, S. Sankaran","doi":"10.1109/RFIC54546.2022.9863207","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863207","url":null,"abstract":"An active balun using dual stage feedback and distributed feedforward distortion cancellation for use as a driver amplifier for wideband RF sampling ADCs is presented. With a gain of 16.5dB & HD2 of 60dBc while delivering 3dBm (100Ω), the DC coupled balun achieves a linear-bandwidth of >12GHz holding OIP3>27dBm & NF<8dB, and small-signal bandwidth of 18GHz with <±0.5dB amplitude & <±2.5° phase imbalance. Cascaded balun + ADC measurements demonstrate no linearity limitation, while allowing for 19.5dB lower input signal. Occupying 1mm2in a 130nm BiCMOS process, the device consumes 100mA from 5V in a 2×2mm2 flip chip QFN package.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"266 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132053696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Integrated Quantum Spin Control System in 180nm CMOS 180nm CMOS集成量子自旋控制系统
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863137
Kaisarbek Omirzakhov, M. H. Idjadi, Tzu-Yung Huang, S. Breitweiser, David A. Hopper, L. Bassett, F. Aflatouni
{"title":"An Integrated Quantum Spin Control System in 180nm CMOS","authors":"Kaisarbek Omirzakhov, M. H. Idjadi, Tzu-Yung Huang, S. Breitweiser, David A. Hopper, L. Bassett, F. Aflatouni","doi":"10.1109/RFIC54546.2022.9863137","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863137","url":null,"abstract":"Solid-state electron spins are key building blocks for emerging applications in quantum information science, including quantum computers, quantum communication links, and quantum sensors. However, solid-state spins are controlled using complex microwave pulse sequences, which are typically generated using benchtop electrical instruments. Integration of the required electronics will enable realization of a scalable low-power and compact optically addressable quantum system. Here, we report an integrated reconfigurable quantum control system, which is used to perform Rabi and Ramsey oscillation measurements for an NV center in diamond. The 180nm CMOS chip, fabricated within a footprint of 3.02mm2, consumes 80 mW of power, and is capable of generating a tunable microwave signal from 1.6 GHz to 2.6 GHz modulated with a sequence of up to 4098 reconfigurable pulses with a pulse width adjustable from 10ns to 42ms and a pulse-to-pulse delay adjustable between 18 ns to 42m, at a resolution of 2.5 ns.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133832471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 2Gb/s 9.9pJ/b Sub-10GHz Wireless Transceiver for Reconfigurable FDD Wireless Networks and Short-Range Multicast Applications 用于可重构FDD无线网络和短距离组播应用的2Gb/s 9.9pJ/b Sub-10GHz无线收发器
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863181
Renzhi Liu, Beevi K. T. Asma, R. Dorrance, T. Cox, Rinkle Jain, Tolga Acikalin, Zhen Zhou, Tae-Young Yang, Johanny Escobar-Pelaez, Shuhei Yamada, Kenneth P. Foust, B. Carlton
{"title":"A 2Gb/s 9.9pJ/b Sub-10GHz Wireless Transceiver for Reconfigurable FDD Wireless Networks and Short-Range Multicast Applications","authors":"Renzhi Liu, Beevi K. T. Asma, R. Dorrance, T. Cox, Rinkle Jain, Tolga Acikalin, Zhen Zhou, Tae-Young Yang, Johanny Escobar-Pelaez, Shuhei Yamada, Kenneth P. Foust, B. Carlton","doi":"10.1109/RFIC54546.2022.9863181","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863181","url":null,"abstract":"This paper presents a sub-10GHz wireless transceiver for short-range multicast applications in a reconfigurable FDD wireless network. The transceiver adopts a digital-process-friendly architecture and can deliver up to 2Gb/s data rate in a 500MHz channel bandwidth with 19.8mW power consumption and 9.9pJ/b energy efficiency. Being a coherent transceiver, it outputs -5.5dBm power, achieves -67.5dBm sensitivity at 1Gb/s and 1dB de-sensitization during FDD operation while tolerating -26dBm close-in Wi-Fi blockers.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131845379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 8–30 GHz Passive Harmonic Rejection Mixer with 8 GHz Instantaneous IF Bandwidth in 45RFSOI 45RFSOI中8 GHz瞬时中频带宽的8 - 30 GHz无源谐波抑制混频器
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863130
Amr Ahmed, Gabriel M. Rebeiz
{"title":"A 8–30 GHz Passive Harmonic Rejection Mixer with 8 GHz Instantaneous IF Bandwidth in 45RFSOI","authors":"Amr Ahmed, Gabriel M. Rebeiz","doi":"10.1109/RFIC54546.2022.9863130","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863130","url":null,"abstract":"This work presents a passive harmonic rejection mixer which employs resistive scaling to maintain high linearity and to achieve 3rd and 5th harmonic rejection. The 8-phase 50% duty-cycle clocks are generated using polyphase filters without any clock dividers, and isolation between the 4 mixers is achieved using a Wilkinson network in the RF path. This enables the mixer to operate at mm-wave frequencies with wide instantaneous bandwidth, and greatly reduces the LO power consumption due to the much lower operating frequency of the LO network. The mixer is fabricated in the GlobalFoundries CMOS 45-RFSOI process and has a measured conversion loss of 12 dB with a 3-dB bandwidth of 8- 30 GHz, and an IF instantaneous bandwidth of up to 8 GHz. The measured harmonic rejection ratio (HRR) at the 2nd, 3rd and 5th harmonics is better than 27 dBc across the entire bandwidth. An input P1dB of 4.2-7 dBm is achieved at 8–30 GHz due to the passive architecture. Application areas are in high linearity high-If mm-wave 5G systems and wideband receivers.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133455860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 59-fs-rms 35-GHz PLL with FoM of −241-dB in $0.18-mu mathrm{m}$ BiCMOS/SiGe Technology 一个59-fs-rms 35-GHz锁相环,FoM为- 241-dB,采用$0.18-mu mathrm{m}$ BiCMOS/SiGe技术
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2022-06-19 DOI: 10.1109/RFIC54546.2022.9863116
Rajath Bindiganavile, Asif Wahid, Jacob Atkinson, A. Tajalli
{"title":"A 59-fs-rms 35-GHz PLL with FoM of −241-dB in $0.18-mu mathrm{m}$ BiCMOS/SiGe Technology","authors":"Rajath Bindiganavile, Asif Wahid, Jacob Atkinson, A. Tajalli","doi":"10.1109/RFIC54546.2022.9863116","DOIUrl":"https://doi.org/10.1109/RFIC54546.2022.9863116","url":null,"abstract":"A wideband and ultra low-noise Phase-Locked Loop (PLL) circuit is designed and implemented in a $0.18 mu mathrm{m}$ BiCMOS/SiGe technology to operate at a nominal frequency of 35.68 GHz. Incorporating a multi-phase phase frequency detector along with a high frequency reference signal, the bandwidth of the PLL was maximized to reduce the phase noise and jitter contribution of the forward path loop components within the frequency band of interest. A multi-phase phase comparator also relaxes the constraints imposed by the sampling nature of the PLL, allowing for a more convenient performance optimization with reduced jitter peaking and more optimal loop characteristics. The PLL was measured to have a Phase Noise of −113.3 dBc/Hz at an offset frequency of 1 MHz, and a total integrated jitter of 59 fs-rms integrated from 1 kHz to 100 MHz, consuming 194.6 mW with a jitter-power FoM −241.6 dB. The power dissipation of the proposed PLL is lower than implementations in similar technology nodes, while obviously higher than designs made in advanced CMOS/FinFET technologies. The PLL has been designed in BiCMOS/SiGe $0.18 mu mathrm{m}$, aiming to be integrated together with power amplifiers in a 3D structure targeted for the next generation 5G systems.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128286696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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