Progress in Quantum Electronics最新文献

{"title":"Terahertz sources based on stimulated polariton scattering","authors":"Andrew J. Lee,&nbsp;David J. Spence,&nbsp;Helen M. Pask","doi":"10.1016/j.pquantelec.2020.100254","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100254","url":null,"abstract":"<div><p>In this paper we review the field of terahertz (THz) sources which make use of the nonlinear, stimulated polariton scattering (SPS) process. A historical perspective of the technology is offered, in addition to an investigation of modern SPS-based THz sources. Breakthroughs in these source technologies have coincided with rapid developments in laser technology over the past 10 years. We are now in an age where pulsed SPS-THz sources are generating peak powers in excess of 50 ​kW, and continuous wave SPS-THz sources can be produced using diode pump powers as low as 2.3 ​W. The versatility of this approach to THz generation has enabled the generation of coherent THz radiation across continuous wave (CW), nanosecond-, and picosecond-pulsed modalities, with sources spanning the frequency range 0.5–13 ​THz. Being based on robust and well-developed, crystalline solid-state laser technology, these sources hold great promise as an enabling technology for a plethora of THz applications.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"71 ","pages":"Article 100254"},"PeriodicalIF":11.7,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100254","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2620888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display","authors":"Xiaojie Zhou ,&nbsp;Pengfei Tian ,&nbsp;Chin-Wei Sher ,&nbsp;Jiang Wu ,&nbsp;Hezhuang Liu ,&nbsp;Ran Liu ,&nbsp;Hao-Chung Kuo","doi":"10.1016/j.pquantelec.2020.100263","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100263","url":null,"abstract":"<div><p>Micro light-emitting diode (micro-LED) display, mainly based on inorganic GaN-based LED, is an emerging technique with high contrast, low power consumption, long lifetime and fast response time compared to liquid crystal display<span> (LCD) and organic light-emitting diode (OLED) display. Therefore, many research institutes and companies have conducted in-depth research on micro-LED in the full-colour display, gradually realizing the commercialization of micro-LED. And the current research results of micro-LED indicate that it can be widely used in display, visible light communication (VLC), biomedicine and other fields. Although micro-LED has broad commercial prospects, it still faces great challenges, such as the effect of size reduction on performance, the realization of high-density integration on a single wafer for independent addressing of full-colour micro-LED display, the improvement of repair technique and yield et al. This paper reviews the key solutions to the technical difficulties of the full-colour micro-LED display. Specifically, this review analyzes and discusses a variety of advanced full-colour micro-LED display techniques with a focus on three aspects: growth technique, transfer printing technique and colour conversion technique. This review demonstrates the opportunities, progress and challenges of these techniques, aiming to guide the development of full-colour micro-LED display.</span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"71 ","pages":"Article 100263"},"PeriodicalIF":11.7,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100263","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2620889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Generation, optimization, and application of ultrashort femtosecond pulse in mode-locked fiber lasers","authors":"Ying Han ,&nbsp;Yubin Guo ,&nbsp;Bo Gao ,&nbsp;Chunyang Ma ,&nbsp;Ruohan Zhang ,&nbsp;Han Zhang","doi":"10.1016/j.pquantelec.2020.100264","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100264","url":null,"abstract":"<div><p>Ultrafast femtosecond mode-locked fiber laser plays an indispensable role in medical imaging, space ranging, ophthalmology, terahertz spectroscopy<span>, material micromachining, and so on. It’s not only an important tool for people to explore the world, but also a pillar field of laser technology. This review present the generation of femtosecond pulses in ultrafast mode-locked fiber lasers using active, passive, hybrid mode-locking techniques, the emphasis is given to passively mode-locked fiber lasers. In terms of the optimization of femtosecond pulses, we introduce the external compression technique to obtain shorter pulse width, chirped pulse amplification technique to increase pulse energy and obtain high energy femtosecond pulses at the practical band. Furthermore, the coherent beam combination and divided pulse amplification technique to further boost pulse energy are summarized. At the end of this review, we present a detailed overview of the applications of femtosecond pulses including the generation of supercontinuum and tunable femtosecond pulses, and some practical applications. Several perspectives and research directions of femtosecond pulses are also addressed.</span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"71 ","pages":"Article 100264"},"PeriodicalIF":11.7,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100264","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2620890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chip-scale GaN integration","authors":"K.H. Li,&nbsp;W.Y. Fu,&nbsp;H.W. Choi","doi":"10.1016/j.pquantelec.2020.100247","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2020.100247","url":null,"abstract":"<div><p><span>Blue LEDs<span><span> and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, </span>optoelectronic, and </span></span>optical components based on GaN are discussed.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"70 ","pages":"Article 100247"},"PeriodicalIF":11.7,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2020.100247","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2164454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances in microwave photonics instantaneous frequency measurements","authors":"Lam Anh Bui","doi":"10.1016/j.pquantelec.2019.100237","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2019.100237","url":null,"abstract":"<div><p>This paper reviews the field of microwave photonics<span> instantaneous frequency measurements (IFM). It aims to consolidate the literature, explains the key implementations and reviews the recent developments. Current photonic IFMs are capable of operating over a wide bandwidth with a good resolution. However, their implementations are often based on discrete components and exhibit limited dynamic range and moderate efficiency. Photonic integration and improvements of dynamic range and efficiency are thus necessary, and they are anticipated as the future research directions and developments.</span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"69 ","pages":"Article 100237"},"PeriodicalIF":11.7,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2019.100237","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2620893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Special thanks to Professor Jagadish and an introduction to the new editorial team","authors":"M.D. Dawson (Editor-in-Chief),&nbsp;D.P. Tsai (Editor),&nbsp;H. Jelinkova (Editor),&nbsp;M. Kim (Editor),&nbsp;Z. Mi (Editor)","doi":"10.1016/j.pquantelec.2019.100246","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2019.100246","url":null,"abstract":"","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"69 ","pages":"Article 100246"},"PeriodicalIF":11.7,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2019.100246","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2620892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Type-II superlattice photodetectors versus HgCdTe photodiodes","authors":"A. Rogalski,&nbsp;P. Martyniuk,&nbsp;M. Kopytko","doi":"10.1016/j.pquantelec.2019.100228","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2019.100228","url":null,"abstract":"<div><p>The development of the HgCdTe alloy as the most important intrinsic semiconductor for infrared (IR) technology is well established and recognized. In spite of the achievements in material and device quality, the drawbacks still exist due to bulk and surface instability, lower yields and higher costs particularly in fabrication of long wavelength infrared arrays. The difficulties with this material encouraged to research on other compounds to improve device performance.</p><p><span>Since the first paper published by Sakaki and Esaki in 1978 it is well known that InAs and GaSb constitute a nearly lattice-matched material system offering great flexibility in the design of IR optoelectronic devices. After four decades, the III-V type-II </span>superlattice (T2SL) detector technology is under strong development as a possible alternative to HgCdTe. The novel ideas coming in design of detectors have enhanced the position of T2SLs in IR materials detector technology. It appears that T2SLs are especially helpful in the design of unipolar barriers.</p><p><span>In this paper fundamental physical properties of two material systems, HgCdTe and T2SLs, are compared together with their influence on detector performance: dark current density, </span><em>RA</em><span> product, quantum efficiency, and noise equivalent different temperature. In comparison with HgCdTe, fundamental properties of T2SLs are inferior. On the other hand, T2SL and barrier detectors have several advantages to include lower tunnelling and surface leakage currents, and suppressed Auger recombination mechanism. Up to date, the promise of superior performance of these detectors has not been realized yet. In the paper we present that the performance of T2SL detectors (dark current, current responsivity, and noise equivalent difference temperature) is lower than bulk HgCdTe photodiodes.</span></p><p>Due to stronger, less ionic chemical bonding of III-V semiconductors, these materials are attractive due to manufacturability and stability. It is also predicted that the interband T2SL quantum cascade devices will outperform the performance of the high operating temperature HgCdTe detectors.</p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"68 ","pages":"Article 100228"},"PeriodicalIF":11.7,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2019.100228","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3386806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A critical review on two-dimensional quantum dots (2D QDs): From synthesis toward applications in energy and optoelectronics","authors":"Arumugam Manikandan ,&nbsp;Yu-Ze Chen ,&nbsp;Chih-Chiang Shen ,&nbsp;Chin-Wei Sher ,&nbsp;Hao-Chung Kuo ,&nbsp;Yu-Lun Chueh","doi":"10.1016/j.pquantelec.2019.100226","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2019.100226","url":null,"abstract":"<div><p><span><span>Recent advances in the development of quantum dots (QDs) have offered new possibilities for the exploration of sensors, bio imaging, batteries, electrochemical water splitting and </span>optoelectronic applications because of their intriguing optical, electrical, catalytic and electrochemical properties. Among QDs, atomically thin two-dimensional quantum dots (2D QDs) derived from graphene sheets, </span>transition metal dichalcogenide<span><span> (TMD) layers and phosphorene have been of considerable interest for the past few years. There have been several intensive studies of carbon QDs, but TMD QDs and </span>heterostructures<span> based on 2D QDs are rapidly advancing. Herein, the synthesis and properties of 2D QDs, particularly carbon and TMD QDs, are reviewed for the recent progress in their application toward electrochemical water splitting, photocatalytic wastewater treatment, supercapacitors<span>, batteries and photodetectors. Moreover, the assembly of such 2D QDs to achieve industrial-scale production and boost their performance in widespread applications is emphasized.</span></span></span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"68 ","pages":"Article 100226"},"PeriodicalIF":11.7,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2019.100226","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3386804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cr:Colquiriite Lasers: Current status and challenges for further progress","authors":"Umit Demirbas","doi":"10.1016/j.pquantelec.2019.100227","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2019.100227","url":null,"abstract":"<div><p>Cr: Colquiriite laser materials (Cr:LiCAF, Cr:LiSAF, Cr:LiSGaF) own broad absorption bands<span> in the visible region that allow direct-diode pumping by well-developed low-cost red diodes. Moreover, they possess broad emission bands in the near infrared<span> that enable widely tunable laser operation (720–1110 nm), and generation of sub-10-fs light pulses via mode-locking. Furthermore, Cr: Colquiriite crystals can be grown with a very low loss level of 0.2%/cm, which enables the construction of high-Q-cavities, resulting in lasing thresholds below 1 mW, and slope efficiencies above 50%. High-Q-cavities constructed with Cr: Colquiriites could store large amount of intracavity laser powers which is off great interest: (i) for increasing the efficiency of intracavity nonlinear processes such as intracavity frequency-doubling, and (ii) for minimizing laser noise such as timing jitter noise in femtosecond operation. However, thermally and mechanically Cr: Colquiriites have glass like properties. Hence, average power scaling has been challenging in the cw and femtosecond Cr: Colquiriite lasers, as well as in their amplifiers. In this paper, we will review research efforts over the last decades, in developing robust, low-cost, highly-efficient, and tunable cw and femtosecond laser sources based on diode-pumped Cr:Colquiriite gain media. Challenges for future progress will also be discussed.</span></span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"68 ","pages":"Article 100227"},"PeriodicalIF":11.7,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2019.100227","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2005564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Toward high-speed visible laser lighting based optical wireless communications","authors":"Cheng-Ting Tsai ,&nbsp;Chih-Hsien Cheng ,&nbsp;Hao-Chung Kuo ,&nbsp;Gong-Ru Lin","doi":"10.1016/j.pquantelec.2019.100225","DOIUrl":"https://doi.org/10.1016/j.pquantelec.2019.100225","url":null,"abstract":"<div><p><span>Visible wavelength light-emitting diodes (LEDs) and laser diodes (LDs) enabled optical </span>wireless communication<span><span> (OWC) is an emerging technology for realizing high-confidentiality and high-speed point-to-point (PtP), vehicle-to-vehicle, and white-lighting data access links in indoor/outdoor free-space and underwater environments. Notably, OWC facilitates users to access more transmission bandwidth and capacity with physical-layer security and electromagnetic-immunity features by utilizing unlicensed visible optical carriers bands covering from 400 to 800 THz as compared to the commonly employed radio-frequency bands. Hence, a large amount of heavy data exchanging, routing, and streaming traffics can be realized in the current wireless networks. This also reinforces the realistic fusion of optical fiber wireline, radio-frequency wireless, and visible lighting communication networks in the new big-data era. In this paper, developing progress as well as the current trend of visible LED and LD based OWC networks for PtP, white-lighting and underwater applications are overviewed in detail. The performance parameters and figures-of-merits of previously reported OWC systems are summarized for comparison and discussion. Three main scenarios including visible LED based lighting OWC, visible LD enabled PtP communication, and LD based white-light fidelity (“Li-Fi”) are individually discussed and summarized with their allowable data rate, transmission distance, and lighting color temperature and rendering index for comparison. At first, the transmission performances of LED based PtP and white-lighting OWC system with the use of novel data formats, such as pulse </span>amplitude modulation and quadrature amplitude modulation-orthogonal frequency division multiplexing, are surveyed to understand the increasing trend on transmission capacity of LED based OWC system. Owing to the limited bandwidth and data rate of LED based OWC system, the LD has gradually been regarded as a competitive alternative candidate transmitter due to their significantly broadened bandwidth and enhanced data capacity. By taking the aforementioned advantages, studies on the blue/violet LD based white-lighting OWC have recently emerged to demonstrate the substitutability of this technology. The impacts of LD based OWC technology with its state-of-the-art implementation are comprehensively discussed together with prospects for future developments. Undoubtedly, the blue/violet LDs are also a promising transmitter for underwater PtP transmission owing to its extremely low power extinction in water, which has recently emerged as the most intriguing source for undersea exploration and sensing applications.</span></p></div>","PeriodicalId":414,"journal":{"name":"Progress in Quantum Electronics","volume":"67 ","pages":"Article 100225"},"PeriodicalIF":11.7,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pquantelec.2019.100225","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2005565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}