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Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996最新文献

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The AstroEdge solar array for the NASA Small Spacecraft Technology Initiative "Clark" satellite NASA小型航天器技术倡议“克拉克”卫星的AstroEdge太阳能阵列
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.563999
J. Renshall, G. Marks
{"title":"The AstroEdge solar array for the NASA Small Spacecraft Technology Initiative \"Clark\" satellite","authors":"J. Renshall, G. Marks","doi":"10.1109/PVSC.1996.563999","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563999","url":null,"abstract":"The AstroEdge flight solar array wings for the Small Spacecraft Technology Initiative (SSTI) \"Clark\" satellite are now in the final stages of assembly and testing. The primary and secondary wing assemblies will be delivered shortly to CTA Incorporated for spacecraft integration and test. Vehicle launch from Vandenberg Air Force Base on the Lockheed launch vehicle is set for 31 August 1996. The SSTI spacecraft is a polar orbit mapping spacecraft used to support various sensor experiments. The array is a concentrator solar array that uses planar mirrors to enhance the level of illumination to the cells to approximately 1.5 suns. The reflectors are arranged to provide a stiff deployed structure and provide cushioning for the GaAs solar cells when stowed during launch. The array is lightweight-the primary wing weight was measured at 6.37 kg and generates 335 watts worst-case EOL for a specific power density of 52.6 W/kg at EOL or 77 W/kg at BOL.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"401 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122857473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Single step rapid thermal diffusion for selective emitter formation and selective oxidation 单步快速热扩散的选择性发射极形成和选择性氧化
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564055
R. Schindler, A. Breymesser, H. Lautenschlager, C. Marckmann, S. Noel, U. Schubert
{"title":"Single step rapid thermal diffusion for selective emitter formation and selective oxidation","authors":"R. Schindler, A. Breymesser, H. Lautenschlager, C. Marckmann, S. Noel, U. Schubert","doi":"10.1109/PVSC.1996.564055","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564055","url":null,"abstract":"A novel method of forming selective emitters for Si solar cells is presented. Using spectral selection of the light used in rapid thermal processing (RTP), diffusion profiles can be tailored to variations desired in sheet resistance of emitters. Sheet resistance topography, secondary ion mass spectroscopy, reoxidation and minority carrier lifetime are discussed.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122509238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Optimum front contact and growth conditions for microcrystalline silicon solar cells from hot-wire CVD 热线CVD制备微晶硅太阳电池的最佳前接触和生长条件
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564318
M. Schubert, H. Wanka, H. Brummack
{"title":"Optimum front contact and growth conditions for microcrystalline silicon solar cells from hot-wire CVD","authors":"M. Schubert, H. Wanka, H. Brummack","doi":"10.1109/PVSC.1996.564318","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564318","url":null,"abstract":"Hot-wire chemical vapor deposition (HWCVD) is a promising method for growing doped as well as undoped microcrystalline (/spl mu/c)-Si films at rates of up to 20 /spl Aring//s. SnO/sub 2/ front contacts for solar cells, however, cannot stand HWCVD growth conditions, namely atomic hydrogen impact and elevated substrate temperatures of 400/spl deg/C and above. Since SnO/sub 2/ is drastically reduced under HWCVD conditions, the authors propose to use ZnO instead and therefore present a detailed characterization of the ZnO/p/sup +/-/spl mu/c-Si interface here. Nucleation and growth of B doped HWCVD /spl mu/c-Si has been monitored by the combined use of in-situ ellipsometry (EL), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Varying the H/sub 2/ dilution of the process gases (flow ratio x=[H/sub 2/]/[SiH/sub 4/+B/sub 2/H/sub 6/]) significantly changes /spl mu/c-Si deposition rate, crystallinity and morphology. XPS depth profiling and EL reveal that no chemical reduction of ZnO occurs even for highest H/sub 2/ dilutions.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121994579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigations into alternative substrate, absorber and buffer layer processing for Cu(In,Ga)Se/sub 2/-based solar cells Cu(In,Ga)Se/sub - 2基太阳能电池衬底、吸收层和缓冲层替代工艺研究
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564248
J. Tuttle, T. Berens, J. Keane, K. Ramanathan, J. Granata, R. Bhattacharya, H. Wiesner, M. Contreras, R. Noufi
{"title":"Investigations into alternative substrate, absorber and buffer layer processing for Cu(In,Ga)Se/sub 2/-based solar cells","authors":"J. Tuttle, T. Berens, J. Keane, K. Ramanathan, J. Granata, R. Bhattacharya, H. Wiesner, M. Contreras, R. Noufi","doi":"10.1109/PVSC.1996.564248","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564248","url":null,"abstract":"High-performance Cu(In,Ga)Se/sub 2/ (CIGS) based solar cells are fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na/sub 2/S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga)/sub y/Se buffer layers contribute to cell performance above 10%. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116996175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The coming of age of a new PV wafer technology-some aspects of EFG polycrystalline silicon sheet manufacture 一种新的光伏晶圆技术即将到来，即EFG多晶硅片制造的某些方面
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564024
M.J. Kardauskas, M. Rosenblum, B. Mackintosh, J. Kalejs
{"title":"The coming of age of a new PV wafer technology-some aspects of EFG polycrystalline silicon sheet manufacture","authors":"M.J. Kardauskas, M. Rosenblum, B. Mackintosh, J. Kalejs","doi":"10.1109/PVSC.1996.564024","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564024","url":null,"abstract":"The authors trace the pioneering research and development experiences over the past 25 years which have led to a full scale manufacturing line for photovoltaic modules utilizing polycrystalline silicon wafers produced by the edge-defined film-fed growth (EFG) technique. They examine the progress made in two core areas in detail-crystal growth productivity and wafer bulk quality-which have justified the recent scale up of EFG technology at ASE Americas to the multi-megawatt level. They identify areas in which future advances will enable a crystalline silicon-based EFG technology to compete with cost targets anticipated for the photovoltaics marketplace beyond the year 2000.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128484042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Aluminum backside segregation 铝背面偏析
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564038
H. Hieslmair, S. Mchugo, E. Weber
{"title":"Aluminum backside segregation","authors":"H. Hieslmair, S. Mchugo, E. Weber","doi":"10.1109/PVSC.1996.564038","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564038","url":null,"abstract":"Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon and the backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129798177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Stability testing of CdTe/CdS thin-film photovoltaic modules CdTe/CdS薄膜光伏组件稳定性测试
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564245
R. Powell, R. Sasala, G. Rich, M. Steele, K. Bihn, N. Reiter, S. Cox, G. Dorer
{"title":"Stability testing of CdTe/CdS thin-film photovoltaic modules","authors":"R. Powell, R. Sasala, G. Rich, M. Steele, K. Bihn, N. Reiter, S. Cox, G. Dorer","doi":"10.1109/PVSC.1996.564245","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564245","url":null,"abstract":"High efficiency, durability, and long-term stability are critical components of cost-effective photovoltaic modules. Industry-established protocols for testing efficiency and durability such as ASTM E948, E1036, and the Module Qualification Test, are effective in ensuring the initial module performance and the integrity of the encapsulation and mechanical components. However, these protocols do not adequately test long-term module performance. This paper describes the initial development of an accelerated testing methodology utilizing various applied stresses. The results of more than 2 years of indoor testing indicate that stable CdS/CdTe modules can be produced.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129908946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Roofing material integrated flexible a-Si PV modules 屋顶材料集成柔性硅光伏组件
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564404
T. Yoshida, M. Tanda, S. Kato, M. Horiguchi, Y. Watanuki, T. Hama, Y. Ichikawa, H. Sakai, N. Sakai, J. Kurihara, O. Ishikawa
{"title":"Roofing material integrated flexible a-Si PV modules","authors":"T. Yoshida, M. Tanda, S. Kato, M. Horiguchi, Y. Watanuki, T. Hama, Y. Ichikawa, H. Sakai, N. Sakai, J. Kurihara, O. Ishikawa","doi":"10.1109/PVSC.1996.564404","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564404","url":null,"abstract":"We have developed roofing material integrated flexible with a-Si:H modules named Solar Roofing. It is a flexible PV module composed of 40 cm/spl times/80 cm a-Si flexible cells fabricated on plastic film; these cells are sandwiched by EVA and a cover film. To finish a roof with Solar Roofing, it is spread on roof boards of a house and set with tempered glass to cover it with an appropriate gap. We have investigated operating conditions of Solar Roofing and also its performance under the conditions. We have also investigated durability of the Solar Roofing under normal (on the roof) and accelerated (dump-heating test) conditions.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123932403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Photovoltaics in Poland 波兰的光伏发电
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564419
S. Pietruszko, G. Wisniewski
{"title":"Photovoltaics in Poland","authors":"S. Pietruszko, G. Wisniewski","doi":"10.1109/PVSC.1996.564419","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564419","url":null,"abstract":"The paper reviews the activities in photovoltaic research and development in Poland. Most activities emphasize research, development and demonstrations. The paper describes also educational activities in the field of photovoltaics. Barriers to the development of photovoltaics technology in Poland are analyzed.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"2022 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114112991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
PV glass curtain walls using color solar cells: the examination of structures and integration on buildings 彩色太阳能电池光伏玻璃幕墙:建筑结构与整合的检验
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI: 10.1109/PVSC.1996.564357
N. Ishikawa, M. Kanai, I. Hide, T. Nagai, T. Ito, T. Yoshida, T. Nii, K. Tazawa, T. Harada
{"title":"PV glass curtain walls using color solar cells: the examination of structures and integration on buildings","authors":"N. Ishikawa, M. Kanai, I. Hide, T. Nagai, T. Ito, T. Yoshida, T. Nii, K. Tazawa, T. Harada","doi":"10.1109/PVSC.1996.564357","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564357","url":null,"abstract":"The authors have been developing building-material-integrated PV modules used as glass curtain walls of building (PV glass curtain walls) using color solar cells with an emphasis on design. As for module structure, examinations were made of such module types as the super-straight and metal-lined. As for installation methods, they examined installation structures of modules using such systems as the aluminum sash, gasket and renovation. They produced a simple outdoor demonstration test facility to examine design and installation methods. Based on the above examination results, they produced a demonstration test facility by installing PV glass curtain walls using color solar cells on the outer walls of an actual building. The area provided for PV glass curtain wall installation except windows was approximately 60 m/sup 2/ (height: 10.8 m, corresponding to a three-story building).","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114831419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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