铝背面偏析

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 Pub Date : 1996-05-13 DOI:10.1109/PVSC.1996.564038

H. Hieslmair, S. Mchugo, E. Weber

{"title":"铝背面偏析","authors":"H. Hieslmair, S. Mchugo, E. Weber","doi":"10.1109/PVSC.1996.564038","DOIUrl":null,"url":null,"abstract":"Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon and the backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Aluminum backside segregation\",\"authors\":\"H. Hieslmair, S. Mchugo, E. Weber\",\"doi\":\"10.1109/PVSC.1996.564038\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon and the backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.\",\"PeriodicalId\":410394,\"journal\":{\"name\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1996.564038\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.564038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

定量表征了铝对铁的背面沾污，并将其与沉淀或背面电场的影响区分开来。结果表明，当杂质浓度较高时，沉淀增加了少数载流子的扩散长度。与吸铝后扩散长度的增加相比，这种影响较小。硅和背面铝之间铁的偏析系数(S)超过10/sup 6/，有迹象表明S可达10/sup 7/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Aluminum backside segregation

Aluminum backside gettering of iron was quantitatively characterized and distinguished from effects of precipitation or back surface fields. It is shown that for high impurity concentrations, precipitation increases minority carrier diffusion lengths. This effect is small compared to the diffusion length increases from aluminum gettering. Segregation coefficients (S) for iron between silicon and the backside aluminum were found exceeding 10/sup 6/ and there are indications for S up to 10/sup 7/.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

自引率

0.00%

发文量