2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)最新文献

筛选
英文 中文
Dynamic LDPC codes for nanoscale memory with varying fault arrival rates 具有不同故障到达率的纳米级存储器动态LDPC码
Shalini Ghosh, P. Lincoln
{"title":"Dynamic LDPC codes for nanoscale memory with varying fault arrival rates","authors":"Shalini Ghosh, P. Lincoln","doi":"10.1109/DTIS.2011.5941439","DOIUrl":"https://doi.org/10.1109/DTIS.2011.5941439","url":null,"abstract":"Modern state-of-the-art nanodevices exhibit remarkable electronic properties, but the current assembly techniques yield very high defect and fault rates. Static errors can be addressed at fabrication time by testing and reconfiguration, but soft errors are problematic since their arrival rates are expected to vary over the lifetime of a part. Usual designs consider error correcting codes that tolerate the maximum failure rate expected over the entire lifetime. In this paper, we propose using a special variant of low-density parity codes (LDPCs) — Euclidean Geometry LDPC (EG-LDPC) codes — to enable dynamic changes in the level of fault tolerance. EG-LDPC codes have high error correcting ability (for large words they can approach the optimal Shannon limit) and they are sparse (circuit implementation requires small fan-in). In addition, a special property of EG-LDPC codes enables us to dynamically adjust the error correcting capacity for improved system performance (e.g., lower power consumption) during periods of expected low fault arrival rate. We present a system architecture for nanomemory based on nanoPLA building blocks using EG-LDPCs, where the encoder/decoder could also have faults, and analyze the fault detection and correction capabilities considering dynamic fault tolerance.","PeriodicalId":409387,"journal":{"name":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"135 S234","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132905563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On the diminished-1 modulo 2N+1 fused multiply-add units 在减小-1模2N+1熔接乘加单元上
C. Efstathiou, I. Voyiatzis
{"title":"On the diminished-1 modulo 2N+1 fused multiply-add units","authors":"C. Efstathiou, I. Voyiatzis","doi":"10.1109/DTIS.2011.5941427","DOIUrl":"https://doi.org/10.1109/DTIS.2011.5941427","url":null,"abstract":"In this work the most efficient modulo 2<sup>n</sup>+1 multiplication algorithm for diminished-1 operands proposed to date is extended to compute expressions of the form |A×B + D|<inf>2n+1</inf>. The derived partial products are reduced by a carry save adder tree to two operands, which are finally added by a modulo 2<sup>n</sup>+1 adder. The proposed architecture can find applicability in systems in which fused multiply-add units can accelerate the execution of the targeting algorithms, for example digital signal processing and cryptography systems.","PeriodicalId":409387,"journal":{"name":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129961637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A CMOS linear-in-dB VGA based on exponential current generator 基于指数电流发生器的CMOS线性-in- db VGA
V. Kalenteridis, S. Vlassis, S. Siskos
{"title":"A CMOS linear-in-dB VGA based on exponential current generator","authors":"V. Kalenteridis, S. Vlassis, S. Siskos","doi":"10.1109/DTIS.2011.5941429","DOIUrl":"https://doi.org/10.1109/DTIS.2011.5941429","url":null,"abstract":"This paper proposes a simple CMOS exponential current circuit that is capable to control a Variable Gain Amplifier with a linear-in-dB manner. The proposed implementation is based on a Taylor's series approximation of the exponential function. A simple VGA architecture has been designed in a CMOS 90nm technology, in order to validate the theoretical analysis. The approximation achieves a 17dB linear range with less than 0.5dB approximation error, while the overall power consumption is less than 300μW.","PeriodicalId":409387,"journal":{"name":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133661752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A standard-cell library suite for deep-deep sub-micron CMOS technologies 深深亚微米CMOS技术的标准单元库套件
D. Bekiaris, A. Papanikolaou, G. Stamelos, D. Soudris, G. Economakos, K. Pekmestzi
{"title":"A standard-cell library suite for deep-deep sub-micron CMOS technologies","authors":"D. Bekiaris, A. Papanikolaou, G. Stamelos, D. Soudris, G. Economakos, K. Pekmestzi","doi":"10.1109/DTIS.2011.5941445","DOIUrl":"https://doi.org/10.1109/DTIS.2011.5941445","url":null,"abstract":"The continuous scaling of CMOS transistor and interconnect geometries brings to light novel challenges regarding the design of VLSI systems in the nanoscale era. On the other hand, most of the forthcoming deep-deep submicron technologies are not yet mature to be used for fabrication. Hence, the development of standard-cell libraries at the nanometer regime is emerging, in order to estimate the behavior of complex systems in short-term technology nodes. In this paper, we introduce a standard-cell library generator flow for sub-65nm nodes, based on scaling rules presented in the literature. Our goal is to create a set of complete standard cell libraries enabling the design of large digital systems in technologies not yet available for fabrication. The generated libraries are compatible with the state-of-the-art industrial tool flows and they have been evaluated by benchmarks of medium and large complexity.","PeriodicalId":409387,"journal":{"name":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128783874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Power reduction through X-filling of transition fault test vectors for LOS testing 通过对过渡故障测试向量进行x填充来降低LOS测试的功耗
F. Wu, L. Dilillo, A. Bosio, P. Girard, S. Pravossoudovitch, A. Virazel, M. Tehranipoor, K. Miyase, X. Wen, N. Ahmed
{"title":"Power reduction through X-filling of transition fault test vectors for LOS testing","authors":"F. Wu, L. Dilillo, A. Bosio, P. Girard, S. Pravossoudovitch, A. Virazel, M. Tehranipoor, K. Miyase, X. Wen, N. Ahmed","doi":"10.1109/DTIS.2011.5941434","DOIUrl":"https://doi.org/10.1109/DTIS.2011.5941434","url":null,"abstract":"Launch-Off-Capture (LOC) and Launch-Off-Shift (LOS) are the two main test schemes for at-speed scan delay testing. In [1, 2], authors proposed a comparison between LOC and LOS, showing that LOS has higher performance than LOC in terms of fault coverage and test length, but higher peak power consumption during the launch-to-capture cycle. This shows the potential benefits of using LOS test scheme provided that power issues can be solved. In this context, this study investigates power reduction of LOS testing through X-filling techniques. Basically, the proposed solution consists in using test relaxation to identify don't-care bits (X-bits) in test vectors and then applying various X-filling techniques so that peak power during the launch-to-capture cycle is comparable to the power consumption in functional mode. In our experiments, we used ITC'99 benchmark circuits synthesized with an industrial 65nm technology. Experimental results show peak power reduction of up to 50% compared to the peak power when test vectors are generated with a conventional ATPG using the random filling option.","PeriodicalId":409387,"journal":{"name":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116878512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信