深深亚微米CMOS技术的标准单元库套件

D. Bekiaris, A. Papanikolaou, G. Stamelos, D. Soudris, G. Economakos, K. Pekmestzi
{"title":"深深亚微米CMOS技术的标准单元库套件","authors":"D. Bekiaris, A. Papanikolaou, G. Stamelos, D. Soudris, G. Economakos, K. Pekmestzi","doi":"10.1109/DTIS.2011.5941445","DOIUrl":null,"url":null,"abstract":"The continuous scaling of CMOS transistor and interconnect geometries brings to light novel challenges regarding the design of VLSI systems in the nanoscale era. On the other hand, most of the forthcoming deep-deep submicron technologies are not yet mature to be used for fabrication. Hence, the development of standard-cell libraries at the nanometer regime is emerging, in order to estimate the behavior of complex systems in short-term technology nodes. In this paper, we introduce a standard-cell library generator flow for sub-65nm nodes, based on scaling rules presented in the literature. Our goal is to create a set of complete standard cell libraries enabling the design of large digital systems in technologies not yet available for fabrication. The generated libraries are compatible with the state-of-the-art industrial tool flows and they have been evaluated by benchmarks of medium and large complexity.","PeriodicalId":409387,"journal":{"name":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A standard-cell library suite for deep-deep sub-micron CMOS technologies\",\"authors\":\"D. Bekiaris, A. Papanikolaou, G. Stamelos, D. Soudris, G. Economakos, K. Pekmestzi\",\"doi\":\"10.1109/DTIS.2011.5941445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The continuous scaling of CMOS transistor and interconnect geometries brings to light novel challenges regarding the design of VLSI systems in the nanoscale era. On the other hand, most of the forthcoming deep-deep submicron technologies are not yet mature to be used for fabrication. Hence, the development of standard-cell libraries at the nanometer regime is emerging, in order to estimate the behavior of complex systems in short-term technology nodes. In this paper, we introduce a standard-cell library generator flow for sub-65nm nodes, based on scaling rules presented in the literature. Our goal is to create a set of complete standard cell libraries enabling the design of large digital systems in technologies not yet available for fabrication. The generated libraries are compatible with the state-of-the-art industrial tool flows and they have been evaluated by benchmarks of medium and large complexity.\",\"PeriodicalId\":409387,\"journal\":{\"name\":\"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIS.2011.5941445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2011.5941445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

CMOS晶体管和互连几何形状的不断缩小为纳米级VLSI系统的设计带来了新的挑战。另一方面,大多数即将到来的深-深亚微米技术尚未成熟,无法用于制造。因此,为了在短期技术节点中估计复杂系统的行为,纳米机制下标准细胞库的开发正在兴起。在本文中,我们介绍了一种基于文献中提出的缩放规则的sub-65nm节点的标准细胞库生成器流程。我们的目标是创建一套完整的标准单元库,使大型数字系统的设计技术尚无法用于制造。生成的库与最先进的工业工具流兼容,并且它们已经通过中等和大型复杂性的基准进行了评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A standard-cell library suite for deep-deep sub-micron CMOS technologies
The continuous scaling of CMOS transistor and interconnect geometries brings to light novel challenges regarding the design of VLSI systems in the nanoscale era. On the other hand, most of the forthcoming deep-deep submicron technologies are not yet mature to be used for fabrication. Hence, the development of standard-cell libraries at the nanometer regime is emerging, in order to estimate the behavior of complex systems in short-term technology nodes. In this paper, we introduce a standard-cell library generator flow for sub-65nm nodes, based on scaling rules presented in the literature. Our goal is to create a set of complete standard cell libraries enabling the design of large digital systems in technologies not yet available for fabrication. The generated libraries are compatible with the state-of-the-art industrial tool flows and they have been evaluated by benchmarks of medium and large complexity.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信