Proceedings of the 2nd IEEE Conference on Nanotechnology最新文献

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Electrical conduction and magnetic moment of a biased double-wire system 偏置双线系统的导电性和磁矩
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032281
A. Smirnov, L. Mourokh, N. Horing
{"title":"Electrical conduction and magnetic moment of a biased double-wire system","authors":"A. Smirnov, L. Mourokh, N. Horing","doi":"10.1109/NANO.2002.1032281","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032281","url":null,"abstract":"We analyze electron transport and magnetic response of a semiconductor double-wire system in the case when the wires are connected to leads in series, with tunnel coupling between them. Explicit analytical expressions for the lead-to-lead current and the average magnetic moment induced by an applied magnetic field are obtained. We show that at low temperature the magnetic response of such a system can be either diamagnetic or paramagnetic depending on the applied bias and the equilibrium chemical potential of the leads.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132158743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CdS nanoparticles embedded in metal-insulator-semiconductor structures 嵌入金属-绝缘体-半导体结构中的CdS纳米颗粒
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032243
S. Malik, A. Ray, A. K. Hassan, A. V. Nabok
{"title":"CdS nanoparticles embedded in metal-insulator-semiconductor structures","authors":"S. Malik, A. Ray, A. K. Hassan, A. V. Nabok","doi":"10.1109/NANO.2002.1032243","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032243","url":null,"abstract":"Metal-insulator-semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage was found to be 0.5 V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix was estimated to be 5.2.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131498612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface-mounted thin-film actuators in pointing systems applications 表面安装的薄膜致动器在指向系统中的应用
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032290
S. Lyshevski, J. Getpreecharsawas
{"title":"Surface-mounted thin-film actuators in pointing systems applications","authors":"S. Lyshevski, J. Getpreecharsawas","doi":"10.1109/NANO.2002.1032290","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032290","url":null,"abstract":"In this paper, high-fidelity modeling, precision positioning, vibration and disturbance attenuations, as well as tracking control problems for flexible beams with thin-film PZT actuators are studied. The mathematical models of the beam are described by partial differential equations. Nonlinear actuator dynamics are integrated to perform design, and guarantee accurate performance analysis with outcome prediction. Forces developed by the PZT actuators are applied to properly position the beam, attenuate vibrations and minimize disturbances. It is illustrated that high-fidelity mathematical models of actuators must be integrated because nonlinearities, hysteresis and other phenomena cannot be neglected. These nonlinear effects significantly degrade overall performance and, therefore, the control problem must be solved. To guarantee the optimal performance, robust tracking control algorithms are designed using proportional-integral control laws with state feedback. A novel design method is applied. In addition to the solution of the tracking control problem, the parametric optimization problem must be examined. In particular, we examine the system performance using different numbers of thin-film actuators and optimize their locations. The results reported are new and have not been previously reported in the literature. The proposed mathematical models, design procedures and optimization are verified through heterogeneous simulations and data-intensive analysis using the MATLAB environment.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134046182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots InAs/GaAs量子点上InGaAs帽层的相分离生长
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032260
Shen-De Chen, C. Tsai, Si‐Chen Lee
{"title":"Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots","authors":"Shen-De Chen, C. Tsai, Si‐Chen Lee","doi":"10.1109/NANO.2002.1032260","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032260","url":null,"abstract":"The mechanisms responsible for the shift of the photoluminescence spectrum to longer wavelength by depositing an InGaAs cap layer on InAs/GaAs quantum dots are studied in detail. It is demonstrated that the phase separation growth of InAs and GaAs rather than the stress in the InAs quantum dots is the main reason for the wavelength shifts. AFM images of a single InAs quantum dot are presented and the reason for the differences between AFM and SEM images is discussed.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115499825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Assembly of electrospun nanofibers into crossbars 电纺纳米纤维组装成横杆
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032247
E. Zussman, A. Theron, A. Yarin
{"title":"Assembly of electrospun nanofibers into crossbars","authors":"E. Zussman, A. Theron, A. Yarin","doi":"10.1109/NANO.2002.1032247","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032247","url":null,"abstract":"We report an approach for the hierarchical assembly of nanofibers into crossbar nanostructures. The polymer nanofibers are created through electrospinning process with diameters ranging in 10-80 nm and lengths of up to centimeters. By controlling the electrostatic field and the polymer rheology of the nanofibers, they can be assembled into parallel periodic arrays.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116267227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Large pure refractive nonlinearity of nanostructure silica aerogel at near infrared wavelength 纳米结构二氧化硅气凝胶在近红外波段的大纯折射非线性
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032296
J. Seo, Q. Yang, S. Creekmore, D. Temple
{"title":"Large pure refractive nonlinearity of nanostructure silica aerogel at near infrared wavelength","authors":"J. Seo, Q. Yang, S. Creekmore, D. Temple","doi":"10.1109/NANO.2002.1032296","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032296","url":null,"abstract":"The nonlinear refraction coefficient of the third-order susceptibility of silica aerogel was estimated to be /spl sim/-1.5/spl times/10/sup -15/ m/sup 2//W (/spl sim/-3.67/spl times/10/sup -9/ esu) by a signal-beam z-scan technique with /spl sim/1 ps Ti:sapphire lasers. The third-order nonlinear refraction coefficient of nanostructure silica aerogel is almost five orders larger than the nonlinear (/spl chi//sup 3/) refraction of bulk material. The large nonlinear refraction originates mainly from the direct excitation to the surface trapped states, and the one-photon resonance process.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122562263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Capacitive micromachined ultrasonic transducer based integrated actuator for atomic force microscope cantilevers 基于电容式微机械超声换能器的原子力显微镜悬臂梁集成驱动器
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032120
E. Haeggstrom, G. Yaralioglu, A. Ergun, P. Khuri-Yakub
{"title":"Capacitive micromachined ultrasonic transducer based integrated actuator for atomic force microscope cantilevers","authors":"E. Haeggstrom, G. Yaralioglu, A. Ergun, P. Khuri-Yakub","doi":"10.1109/NANO.2002.1032120","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032120","url":null,"abstract":"The atomic force microscope (AFM) is a versatile tool for imaging and modifying surfaces on atomic scales. The core of the device is a cantilever beam with a sharp tip. The cantilever usually measures a few hundred microns in length and tens of microns in width. Many imaging or surface modification applications require actuation of this micron scale beam. In this paper, a novel actuation mechanism is introduced. The method uses radiation pressure generated by capacitive micromachined ultrasonic transducers (cMUT). The cMUTs are fabricated on top of the cantilever beams and they operate in the megahertz range generating a DC radiation pressure in the immersion medium such as water or air. The integrated cMUT cantilever system compares favorably with piezoelectric film activated and with non-integrated ultrasonic actuation schemes. The cMUT cantilever does not require any alignment of the actuator to the cantilever. Moreover, it works in air as well as in water and is readily used with parallel cantilever probes. Finally, it is an IC compatible technology solution.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128842073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Silicon nanocrystals precipitation in a SiO/sub 2/ matrix elaborated from the decomposition of LPCVD SiO/sub x/ 从LPCVD SiO/sub /分解的角度阐述了SiO/sub /基体中硅纳米晶的析出
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032244
N. Buffet, P. Mur, B. De Salvo, M. Semeria
{"title":"Silicon nanocrystals precipitation in a SiO/sub 2/ matrix elaborated from the decomposition of LPCVD SiO/sub x/","authors":"N. Buffet, P. Mur, B. De Salvo, M. Semeria","doi":"10.1109/NANO.2002.1032244","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032244","url":null,"abstract":"In this paper, we present results of a study which aims to obtain silicon nanocrystals (Si/sub nc/) embedded in a thin SiO/sub 2/ matrix, using high temperature annealing, from the thermal decomposition of SiO/sub x/. So, thin SiO/sub x/ films (4-10 nm) are grown from a N/sub 2/O/SiH/sub 4/ mixture in an industrial LPCVD reactor with different process parameters. Spectroscopic ellipsometry and Fourier transform infrared spectroscopy are used both to determine the stoichiometry of the SO/sub x/ and the decomposition state of the film after high temperature annealing. X-ray photoelectron spectroscopy confirms the completion of the reaction after annealing at 1000/spl deg/C for 15 minutes and transmission electron microscopy shows that the crystallinity of the silicon dots is dependent both on the stoichiometry of the SiO/sub x/ film and on the annealing temperature. Finally, some electrical results are presented and they show charge trapping in the SiO/sub x/ LPCVD layer.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126432593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On Ladders' complexity mechanism and quantitative regulation of scalable molecular computers by Rho family GTPases Rho家族GTPases对可扩展分子计算机的ladder复杂性机制和定量调控
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032257
J.-Q. Liu, K. Shimohara
{"title":"On Ladders' complexity mechanism and quantitative regulation of scalable molecular computers by Rho family GTPases","authors":"J.-Q. Liu, K. Shimohara","doi":"10.1109/NANO.2002.1032257","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032257","url":null,"abstract":"We propose a new bio-molecular computing method based on Rho family GTPases, and report that the Ladders' complexity increasing phenomenon is observed when molecular computing by Rho family GTPases is applied to solve large-scale 3-SAT problems. We also present the optimal condition for the regulation scheme as Pg=h Pl/Ql where Pg is the probability of global communication among the sub-pathways, Pl is the probability of local communication in the sub-pathways within the domain of the neighborhood, and h is the experimental coefficient dependent on the temperature, kinase activity and sorts of cells.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130524651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Neuroscience, neuroachitectronics, nanocomputers and nanotechnology 神经科学、神经建筑电子学、纳米计算机和纳米技术
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032155
L. Lyshevski
{"title":"Neuroscience, neuroachitectronics, nanocomputers and nanotechnology","authors":"L. Lyshevski","doi":"10.1109/NANO.2002.1032155","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032155","url":null,"abstract":"With the ultimate objectives to design nanocomputers hardware (e.g., develop affordable high-performance architectures, discover advance organizations, synthesize and examine novel topologies, analyze performance, et cetera) far-reaching research should be performed. The need for mathematical models is emphasized, and we report the results in mapping neuroscience into advanced nanocomputer architectures with the sequential analysis and modeling. Optimization of nanocomputers can be performed as they are designed by applying neuroscience-neuroachitectronics fundamentals. Then, using the mathematical models, analysis and optimization can be formulated and carried out.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130341126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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