InAs/GaAs量子点上InGaAs帽层的相分离生长

Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI:10.1109/NANO.2002.1032260

Shen-De Chen, C. Tsai, Si‐Chen Lee

{"title":"InAs/GaAs量子点上InGaAs帽层的相分离生长","authors":"Shen-De Chen, C. Tsai, Si‐Chen Lee","doi":"10.1109/NANO.2002.1032260","DOIUrl":null,"url":null,"abstract":"The mechanisms responsible for the shift of the photoluminescence spectrum to longer wavelength by depositing an InGaAs cap layer on InAs/GaAs quantum dots are studied in detail. It is demonstrated that the phase separation growth of InAs and GaAs rather than the stress in the InAs quantum dots is the main reason for the wavelength shifts. AFM images of a single InAs quantum dot are presented and the reason for the differences between AFM and SEM images is discussed.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots\",\"authors\":\"Shen-De Chen, C. Tsai, Si‐Chen Lee\",\"doi\":\"10.1109/NANO.2002.1032260\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanisms responsible for the shift of the photoluminescence spectrum to longer wavelength by depositing an InGaAs cap layer on InAs/GaAs quantum dots are studied in detail. It is demonstrated that the phase separation growth of InAs and GaAs rather than the stress in the InAs quantum dots is the main reason for the wavelength shifts. AFM images of a single InAs quantum dot are presented and the reason for the differences between AFM and SEM images is discussed.\",\"PeriodicalId\":408575,\"journal\":{\"name\":\"Proceedings of the 2nd IEEE Conference on Nanotechnology\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd IEEE Conference on Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2002.1032260\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd IEEE Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2002.1032260","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

详细研究了在InAs/GaAs量子点上沉积InGaAs帽层使光致发光光谱向更长波方向移动的机理。结果表明，导致波长偏移的主要原因是InAs和GaAs的相分离生长，而不是InAs量子点中的应力。给出了单个InAs量子点的AFM图像，并讨论了AFM图像与SEM图像差异的原因。

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Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots

The mechanisms responsible for the shift of the photoluminescence spectrum to longer wavelength by depositing an InGaAs cap layer on InAs/GaAs quantum dots are studied in detail. It is demonstrated that the phase separation growth of InAs and GaAs rather than the stress in the InAs quantum dots is the main reason for the wavelength shifts. AFM images of a single InAs quantum dot are presented and the reason for the differences between AFM and SEM images is discussed.

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Proceedings of the 2nd IEEE Conference on Nanotechnology

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