嵌入金属-绝缘体-半导体结构中的CdS纳米颗粒

Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI:10.1109/NANO.2002.1032243

S. Malik, A. Ray, A. K. Hassan, A. V. Nabok

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引用次数: 0

摘要

采用40层硬脂酸(SA) Langmuir-Blodgett (LB)薄膜在疏水n型硅(n-Si)衬底上制备了金属绝缘体-半导体结构。含有硫化镉纳米粒子的样品比未处理的样品表现出更高的整流，提高了两个数量级。从电容测量中发现平带电压为0.5 V。估计CdS嵌入SA矩阵的有效介电常数为5.2。

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CdS nanoparticles embedded in metal-insulator-semiconductor structures

Metal-insulator-semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage was found to be 0.5 V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix was estimated to be 5.2.

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Proceedings of the 2nd IEEE Conference on Nanotechnology

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