Proceedings of the 2nd IEEE Conference on Nanotechnology最新文献

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On quantum computing with macroscopic Josephson qubits 宏观Josephson量子比特的量子计算
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032252
Jie Han, P. Jonker
{"title":"On quantum computing with macroscopic Josephson qubits","authors":"Jie Han, P. Jonker","doi":"10.1109/NANO.2002.1032252","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032252","url":null,"abstract":"The achievements of quantum computation theory, e.g. Shor's factoring algorithm, motivate efforts to realize quantum computers. Among systems proposed for quantum computing, macroscopic superconducting circuits of Josephson junctions appear promising for integration in electronic circuits and large-scale applications. Recently, a superconducting tunnel junction circuit was designed and a sufficiently high quality factor of quantum coherence has been obtained. This indicates that decoherence need not be among the obstacles in building quantum computers with macroscopic Josephson circuits. In this paper we present the setup of some elementary quantum logic with macroscopic Josephson qubits, strengthened by some simulation work, and then study the feasibility of implementing Shor's quantum factoring algorithm on them. It is shown that it would be eventually possible to build a 2-dimensional Josephson qubit array, possibly accompanied by classical computing components, capable of performing useful quantum computations.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127399575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Room-temperature two-terminal characteristics in silicon nano wires 硅纳米线的室温双端特性
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032123
S.F. Hu, W. Wong, S.S. Liu, Y.G. Wu, C. Sung, T.Y. Huang, S. M. Sze
{"title":"Room-temperature two-terminal characteristics in silicon nano wires","authors":"S.F. Hu, W. Wong, S.S. Liu, Y.G. Wu, C. Sung, T.Y. Huang, S. M. Sze","doi":"10.1109/NANO.2002.1032123","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032123","url":null,"abstract":"Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room-temperature current-voltage characteristics of the resulting silicon nano wires were shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114846975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High yield non destructive purification of single wall carbon nanotubes monitored by EPR measurements 用EPR测量监测单壁碳纳米管的高收率非破坏性纯化
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032284
L. Capes, E. Valentin, S. Esnouf, A. Ribayrol, O. Jost, A. Filoramo, J. Patillon
{"title":"High yield non destructive purification of single wall carbon nanotubes monitored by EPR measurements","authors":"L. Capes, E. Valentin, S. Esnouf, A. Ribayrol, O. Jost, A. Filoramo, J. Patillon","doi":"10.1109/NANO.2002.1032284","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032284","url":null,"abstract":"A chemical purification method has been developed which leads to highly pure and little damaged single wall nanotubes (SWNT) with a 55 to 65% overall yield. It combines a short and soft acid reflux with a hydrogen peroxide reflux. Electron paramagnetic resonance (EPR) measurements have been used to assess the residual amount of both catalyst and amorphous carbon. By this method, the acid treatment duration was minimized to 4 h, preserving the SWNT structure. EPR indicates a decrease of amorphous carbon content by up to a factor 3 with a 90 minutes peroxide treatment. As-purified SWNTs allow us to generate nanoscale electronic devices via self-assembling.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116163375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Discovery and classification of motion nanodevices 运动纳米器件的发现与分类
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032291
S. Lyshevski
{"title":"Discovery and classification of motion nanodevices","authors":"S. Lyshevski","doi":"10.1109/NANO.2002.1032291","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032291","url":null,"abstract":"Enabling technologies have been developed to synthesize and fabricate organic, inorganic and hybrid nanostructures. The fundamental theory has been further expanded to design, model, simulate and analyze simple nanoelectromechanical systems and devices. There are distinguishing features between nanoscale electromechanical systems, devices, and structures. In general, systems integrate nanodevices and nanostructures. However, using commonly used and accepted notations, we assume that the motion nanodevice is a nanoelectromechanical system (NEMS). A spectrum of fundamental problems primarily associated with devising and discovering novel NEMS remains. These nanodevices can be classified as electronic and motion (rotational and translational transducers - actuators and sensors) nanoscale devices. This paper concentrates on the motion nanodevices. The key focus areas are synthesis, classification and analysis. We emphasize classification and synthesis paradigms with ultimate goal of classifying existing and discovering novel NEMS by performing electromagnetic-geometry synthesis. It is illustrated that NEMS intelligent databases can be developed within evolutionary-based CAD. The synthesis and classification paradigm reported directly leverages fundamental physics laws and high-fidelity modeling, allowing the designer to attain physical and behavioral (steady-state and transient) data-intensive analysis, heterogeneous simulation, optimization, performance assessment, outcome prediction, etc. We focus our attention on rotational and translational nanodevices which can be controlled by driving/sensing controlling/processing nanoelectronics. The examined nanodevices can be considered as NEMS as the electromagnetic-based nanomachines integrate motion and radiating energy nanodevices as well as nanostructures.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122137171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atomic interdiffusion for integration of quantum dot optoelectronic devices 量子点光电器件集成中的原子互扩散
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032259
P. Lever, H. Tan, M. Gal, C. Jagadish
{"title":"Atomic interdiffusion for integration of quantum dot optoelectronic devices","authors":"P. Lever, H. Tan, M. Gal, C. Jagadish","doi":"10.1109/NANO.2002.1032259","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032259","url":null,"abstract":"The effect of interdiffusion on the luminescence of IuGaAs quantum dots grown by metal organic vapour phase epitaxy was studied. The samples were subjected to rapid thermal annealing with various capping layers. Up to 250meV blueshifts and narrowing of the linewidths by up to 60meV were observed in samples that were annealed without the dielectric cap. The capping layers created additional blueshift above that of simple thermal annealing. Ion implantation was used to create a higher density of defects in the region surrounding the dots. This led to enhanced blueshifts in the quantum dot luminescence. It was found that only low temperature anneals were required to recover the luminescence after annealing, in contrast to quantum wells which need anncaling at higher temperatures for the luminescence to be recovered. These results suggest that a range of bandgap energies could be achieved by selective area interdifhsion of the quantwn dot samples.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124423666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Green's function simulation of quantum structures including magnetic field 包括磁场在内的量子结构的格林函数模拟
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032278
D. Guan, Umberto Ravaioli
{"title":"Green's function simulation of quantum structures including magnetic field","authors":"D. Guan, Umberto Ravaioli","doi":"10.1109/NANO.2002.1032278","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032278","url":null,"abstract":"Practical simulation of quantum structures requires considerable development of numerical tools and physical models, in order to approach the level of functionality of established methodologies for classical devices. We have realized a general procedure for multidimensional nonequilibrium Green's functions (NEGF) simulation, coupled to a variety of Schrodinger and Poisson solvers for different applications. Here, we describe the extensions of the model to include the effect of magnetic field and extend the simulation to multiterminal structures. We outline a procedure for the proper evaluation of the self-energy in all open terminals by using a suitable gauge transformation which is required by the nonhermitian Hamiltonian. We apply the method to the simulation of structures used for quantum-Hall effect which provide a well-tested benchmark for theoretical models and simulations including the magnetic field.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129733489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs 深亚微米mosfet中随机掺杂引起的阈值电压色散的量子和半经典建模
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032224
G. Lannaccone, E. Amirante
{"title":"Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs","authors":"G. Lannaccone, E. Amirante","doi":"10.1109/NANO.2002.1032224","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032224","url":null,"abstract":"We have investigated the threshold voltage dispersion in deep submicron mosfets with three dimensional statistical simulations. We show that the doping fluctuations in the vertical directions account almost for the whole dispersion of the threshold voltage. Therefore, we have been able to reproduce the results with a one-dimensional simulator in which also quantum confinement in the channel is taken into account.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127225255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Scanning probe lithography with real time position control interferometer 扫描探头光刻与实时位置控制干涉仪
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032112
B. Yao, F.S.-S. Chien, S. Chen, P. Lui, G.S. Peng
{"title":"Scanning probe lithography with real time position control interferometer","authors":"B. Yao, F.S.-S. Chien, S. Chen, P. Lui, G.S. Peng","doi":"10.1109/NANO.2002.1032112","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032112","url":null,"abstract":"We have constructed an integrated SPM and an xy-position interferometer to properly control the dimensions of the lithography patterns. The tracking error of xy-dimensional positioning system is about 2 nm accuracy and the positioning resolution could reach 0.1 nm. The scanning probe microscope (SPM) oxidation and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching were used to produce smooth and uniform nanopatterns on silicon substrates. The combination of SPM oxidation and real time position control is a promising approach to accurately produce prototyping of functional nano-devices.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130519650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electron transport in nanoscale bipolar transistors 纳米级双极晶体管中的电子输运
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032134
C. Parikh, Mark S. Lundstrom
{"title":"Electron transport in nanoscale bipolar transistors","authors":"C. Parikh, Mark S. Lundstrom","doi":"10.1109/NANO.2002.1032134","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032134","url":null,"abstract":"As base widths are reduced to tens of nanometers in modern bipolar transistors, current transport becomes quasi-ballistic. Classical transport models do not capture transport at this scale. We report the development of a new one-dimensional bipolar transistor simulator - nanoBJT, to study electron transport in nanoscale transistors. The simulator incorporates a variety of carrier transport models, and solves these self-consistently with Poisson's equation. The resulting data demonstrate the limitations of the drift-diffusion and the energy transport models. Directions for future work are proposed.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130470030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An improved three-state master equation model for capacitively coupled single-electron transistor 改进的电容耦合单电子晶体管三态主方程模型
Proceedings of the 2nd IEEE Conference on Nanotechnology Pub Date : 2002-11-07 DOI: 10.1109/NANO.2002.1032293
C. Hu, J. Jiang, Q. Cai
{"title":"An improved three-state master equation model for capacitively coupled single-electron transistor","authors":"C. Hu, J. Jiang, Q. Cai","doi":"10.1109/NANO.2002.1032293","DOIUrl":"https://doi.org/10.1109/NANO.2002.1032293","url":null,"abstract":"In this paper, we develop an improved semi-classical steady-state model for capacitively coupled single-electron transistor (SET). This SET model is based on the three-state steady-state master equation, but has some revision at different device parameters, and is thus called the improved three-state master equation model. We calculate I/sub DS/-U/sub DD/, I/sub DS/-U/sub G/, and G/sub DS/-U/sub DD/ characteristics for different device parameters. We also present corresponding characteristics calculated by the Monte Carlo method and the full master equation method in most cases. The results demonstrate that the new approach is comparable to the Monte Carlo method and the full master equation method in precision, even in the high voltage region of V/sub DS/, and it simplifies the calculation and improves the speed of numerical simulation. This model can easily be embedded in the SPICE program. Of course, the validity of this embedded model depends on whether the SET can be regarded as a separate component in the circuit.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114297733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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