Room-temperature two-terminal characteristics in silicon nano wires

Abstract

Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room-temperature current-voltage characteristics of the resulting silicon nano wires were shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.